157 results about "Antimonide" patented technology

The invention relates to a producing method for antimonide cobalt-based heat devices, which is characterized in that the invention first uses SPS method to produce a single pair or a plurality of pairs of hot electricity block turning 90 degrees of P-N and effectively prevents a plurality of elements of thermoelectric semiconductor from diffusing by a plasma sprayed disusing barrier thin layer on the hot electricity block, and the use of disusing barrier thin layer changes the connection between thermoelectric semiconductor and metal electrode into connection between metals to more facilitate metal electrode unit, and the application of a near-hypoeutectic Ag-Cu solder sheet not only can satisfy temperature use ranging from 500 DEG C to 600 DEG C system of high temperature end antimonide cobalt-based heat device, but also can provide a good welding material for producing other hyperthermia electric material devices, and the electrode material applies an electrode material having a similar thermal expansion coefficient with antimonide cobalt to realize heat match on a greatest degree and reduce thermal stress produced by thermal mismatch.

The preparation method of cadmium telluride powder includes the following steps: firstly, mixing tellurium powder and cadmium powder according to chemical mixing ratio, grinding and stirring mixed material, placing the mixed material in the crucible under the condition of vacuum, heating to make the tellurium powder and cadmium powder produce chemical combination reaction to form cadmium telluride material, further grinding the obtained cadmium telluride material and mixing it further, and placing the cadmium telluride material in heating furnace to make annealing treatment so as to obtain the invented product.

The invention relates to preparation for a cadmium antimonide quantum dot immune marker and a detection method for electrochemical sandwich immune, having the signal amplification function. Through the reaction of silicon dioxide particle and reacting ATPS, an active amido group is modified on the surface of the silicon dioxide particle under room temperature. The silicon dioxide particle is then reacted with carboxyl on the surface of a quantum dot to form a silicon dioxide microsphere with the surface modified with the quantum dot. The silicon dioxide microsphere after being modified is further modified with a second antibody on the surface of the quantum dot under the actions of EDC and NHS, and a cadmium antimonide quantum dot immune marker is obtained. The detection method for the electrochemical sandwich immune utilizes anti-AFP to modify Fe3O4 magnetic nano-microsphere, thereby Si/QD/Ab2 is modified on magnetic particles, and then electrochemical determination is carried out. Because the surface of the marker is rich in the quantum dots, the amount of the quantum dot loaded in a single sandwich immune process is greatly increased, dissolving-out voltammetry detection signals of an anode are amplified, and the sensitivity of low-concentration biomolecule detection is greatly enhanced.

This invention relates to a one-step connection technology for the thermoelectric element of CoSb base and an alloy electrode (flow connector) matched to it characterizing that said alloy electrode is made of Mo-Cu serial alloy advantaged that related CTE can be designed freely, the electrode is made of Mo-Cu alloy in the thickness of 0.5-3mm, and the preparation character is a one-step connection method by utilizing discharge plasma sinter to connect a MoCu alloy electrode material and a CoSb thermoelectric material at a Ti transition layer with the grain size of 30-75mum to connect the interfaces very well without evident resistance transition.

An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide antimonide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.

The invention discloses an antimonide transistor with high electron mobility, which comprises a substrate, a composite buffer layer, an antimonide lower barrier layer, a channel layer, an antimonide isolated layer, a doping layer, an upper barrier layer and a cap layer, wherein the composite buffer layer grows on the substrate; the antimonide lower barrier layer grows on the composite buffer layer; the channel layer grows on the antimonide lower barrier layer; the antimonide isolated layer grows on the channel layer; the doping layer grows on the antimonide isolated layer; the upper barrier layer grows on the doping layer; and the cap layer grows on the upper barrier layer. The invention discloses a method for manufacturing the antimonide transistor with the high electron mobility. In the antimonide transistor, by adopting the composite buffer layer, the quality of transistor structural materials is improved greatly, the electronic transport characteristic of a channel is better, the output characteristic of the device is improved, the characteristics of high frequency, high speed and low power consumption of the device is fully played, and the stability and reliability of the device are improved effectively.

The invention discloses a halogen-free flame-retardant adhesive composition. The composition comprises the following components in part by weight: 15 to 45 parts of halogen-free epoxy resin, 15 to 60 parts of thermoplastic resin and/or synthetic rubber, 0.1 to 8 parts of curing agent and 5 to 60 parts of phosphorus-containing composite flame retardant. The invention also discloses a flexible copper-clad plate using the adhesive composition. The cured product of the adhesive composition provided by the invention shows high flame retardance, peeling strength, electric performance and welding heat resistance, does not comprise harmful substances or elements such as halogen, antimonide and the like and does not pollute environment; the flame retardant rating of the flexible copper-clad plate prepared from the composition of the invention reaches UL-94V0, and the flexible copper-clad plate also has the advantages of high heat resistance, high peeling strength, soldering resistance, no demixing after being subjected to dip soldering at the temperature of 300 DEG C for 1 minute and no bubbles; and because the halogen-free composition of the invention has high sticking performance, the speed of a production line can be increased and the production efficiency is improved.

The invention relates to a doping molybdenum antimonide-based thermoelectric material and the preparation method, which is characterized in that the invention adopts arc melting and discharging plasma rapid sintering method for combination. The preparation method which is provided by the invention is the arc melting and the discharging plasma rapid sintering; Sb and Te/Se are firstly melted to form Sb2Te3Sb2Se3 and then are treated with the arc melting with the stoichiometric ratio of Mo and Sb; finally, the discharging plasma rapid sintering technology is introduced for preparing a dense single-phase material. The invention provides the rapid, simple and effective preparation method of the molybdenum antimonide-based thermoelectric material, which has good practical prospect.

The invention relates to solid or gel-type nanocomposite material which can be polymerised, containing a) 4.9 95.9 wt. % of a soluble polymer; b) 4-95 wt. % of a partially or totally condensed silane selected from the group of epoxyalkoxysilanes, alkoxysilanes and alkylalkoxysilanes, the silane having an inorganic condensation degree of between 33-100% and an organic conversion degree of between 0-95%; c) 0-60 wt. % of an acrylate; d) 0.1-50 wt. % of surface modified nanometric particles selected from the group of oxides, sulphides, selenides, tellurides, halogenides, carbides, arsenides, antimonides, nitrides, phosphides, carbonates, carboxylates, phosphates, sulphates, silicates, titanates, zirconates, aluminates, stannates, plumbates and a mixed oxides; e) 0-50 wt.-% of a plasticiser, f) 0-5 wt. % of a thermal or photochemical cross-linking initiator, sensitizer, auxiliary wetting agent, adhesive agent, antioxidant, stabiliser, colouring agent, photochrome material and thermochrome material in relation to the total weight (dry weight) of the nanocomposite material.

The invention is concerned with the electrode alloy pyroelectricity device of the cobalt antimonide pyroelectricity device and it's making method. It includes the Cu-W alloy electrode with the W quality percentage 20% to 30%; the rest components are copper and unavoidable impurity; the optimized Cu75W25 electrode hot coefficient of expansion (CTE) and the CoSb3 pyroelectricity are in right hot matching with difference no more than 9.8%. The component making applies the transition layer of the metal Ti, granularity about 20-50mum, and the discharge plasma sintering (SPS) method to achieve the connection of the Cu-W alloy electrode and the pyroelectricity. Because of the high conductivity and the thermal conductivity of the copper tungsten alloy and it is matching with the CoSb3 pyroelectricity material rightly, the invention is with the quite stable surface with no obvious composition plane electrode transition, keeps the making method simple.

The invention relates to an epitaxial growth method of a W type antimonide class II quantum well, which comprises the following steps: step 1) selecting a substrate; step 2) performing deoxidation and degasification treatment on the substrate, and observing the surface reconstruction; and step 3) sequentially growing a buffer layer, a W-structured class II quantum well active area with 10 cycles and a GaSb cover layer on the substrate.

The invention provides a large-mismatch silicon-based substrate antimonide transistor with high electron mobility. The large-mismatch silicon-based substrate antimonide transistor comprises a substrate, a composite buffering layer growing on the substrate, an insert layer growing on the composite buffering layer, an AlSb isolation layer growing on the insert layer, a sub channel layer growing on the AlSb isolation layer, an antimonide lower potential barrier layer growing on the sub channel layer, an InAs channel layer growing on the antimonide lower potential barrier layer, an antimonide isolation layer growing on the InAs channel layer, a doping layer growing on the antimonide isolation layer, wherein the doping layer is InAs doped with a Si plane or delta doping of Te; an upper potential barrier layer growing on the doping layer, wherein the upper potential barrier layer is a composite potential barrier layer consisting of an AlSb layer and an InAlAs layer; and an InAs cap layer growing on the upper potential barrier layer, wherein the InAs cap layer is an unintentionally doped InAs or n type doped InAs.

The invention relates to an epoxy resin composition for packaging semiconductors. The composition contains epoxy resin, a phenolic resin curing agent, a curing promoting agent and inorganic filler. The composition is characterized in that the phenolic resin curing agent is phenolic resin containing the following formula (I), wherein n=1-10, and R is H, CH3 or CF3. The epoxy resin composition can be used for effectively packaging various semiconductor devices, such as transistors and integrating circuits. The epoxy resin composition has no damage to the human body health and environments. Because the bromine compounds and antimonide are not contained, the epoxy resin composition is a green environment-protection product and is suitable for a low-pressure transfer forming process for molding, and the cured and formed semiconductor device has good flame retardant property and thermal-humidity reliability.

The present invention provides a trench capacitor, particularly for use in a semiconductor memory cell, having a trench which is formed in a semiconductor substrate; a first conductive capacitor plate which is situated in and/or next to the trench; a second conductive capacitor plate which is situated in the trench; a dielectric layer, which is situated between the first and second capacitor plates, as capacitor dielectric; and an insulating collar in the upper region of the trench. At least one layer of the first first conductive capacitor plate and/or of the second conductive capacitor plate is made of a material from the class containing the metal borides, metal phosphides and metal antimonides of the transition metals from the secondary groups IV, V and VI of the periodic table.

The invention provides a preparation method for a vertical III-V family antimonide semiconductor monocrystalline thin film. The preparation method comprises the steps that step (a): multiple metal catalyst particles used for catalyzing nanowire growth are prepared on a semiconductor substrate; step (b): growth of III-V family semiconductor nanowires is catalyzed on the semiconductor substrate by utilizing the metal catalyst particles, and the metal catalyst particles are arranged at the top end of the III-V family semiconductor nanowires; and step (c): epitaxy of the vertical III-V family antimonide semiconductor monocrystalline thin film is performed on the axial direction of the III-V family semiconductor nanowires so that preparation is completed. Mass production of the vertical III-V family antimonide semiconductor monocrystalline thin film can be easily realized by the preparation method so that production cost of the III-V family antimonide semiconductor monocrystalline thin film can be greatly saved.

The invention provides a polishing method for a gallium antimonide monocrystal wafer. The polishing method comprises the following step (1) of grinding both sides of the gallium antimonide monocrystalwafer to remove damage from the surface of the gallium antimonide monocrystal wafer; the step (2) of chemically and mechanically polishing the ground gallium antimonide monocrystal wafer by using polishing cloth coordinated with polishing solutions; and the step (3) of taking and cleaning the gallium antimonide monocrystal wafer after chemical mechanical polishing. According to the polishing method, through selection and optimization of the components and content of the polishing solutions, and the polishing cloth coordinated with the polishing solutions, one-step forming of polishing of thegallium antimonide monocrystal wafer is achieved, and three steps of rough polishing, medium polishing and fine polishing are not required; the process is simple, and the stability is high; the surface quality of the polished gallium antimonide monocrystal wafer is high, and the defects of scratches and fogging are avoided; the surface roughness is low; and the roughness value Ra can be less than0.15 nm.

The invention discloses a non-antimonide halogen-free flame-retardant polyamide composite material and a preparation method thereof. The composite material comprises 20-80 parts of polyamide resin, 1-30% of bromine flame retardant and 0.01-15 parts of condensed aluminum phosphate. Condensed aluminum phosphate is adopted as a novel flame retardant, flame-retardant effect equivalent to a bromine-antimony flame-retardant system without introducing antimony white can be realized, bromine flame-retardant polyamide can be endowed with excellent electrical performance, damage to environment and humanbodies is reduced, and the composite material has wider application range than bromine-antimony flame-retardant polyamide composite materials.

The invention relates to a method for regulating and controlling circular polarization related photocurrent of a tellurium antimonide film. The method comprises the steps: pasting the tellurium antimonide film to a copper block, and changing the temperature of the tellurium antimonide thin film by changing the temperature of the copper block, wherein due to the fact that laser can heat a laser irradiation area and the light intensity of the upper surface is greater than that of the portion, reaching the substrate, of the upper surface, a temperature gradient exists between the upper surface and the substrate, and due to the thermoelectric effect, the temperature gradient can generate thermoelectric potential energy perpendicular to the surface of the sample; generating a spin current perpendicular to the surface of the sample under the action of the thermoelectric potential energy, wherein due to the inverse spin Hall effect, the transverse charge flow related to circular polarizationis generated, and when the temperature is changed, the thermoelectric potential energy between the upper surface and the substrate is changed, so that the charge flow caused by the inverse spin Hall effect is changed, and the regulation and control of the photocurrent related to circular polarization are realized. The method is remarkable in regulation and control effect, simple, easy to implement, low in cost and beneficial to future application and popularization.