19140 results about "Transition metal" patented technology

Provided are an organic electroluminescence device having high luminous efficiency and a long emission lifetime, and a transition metal complex compound realizing the organic electroluminescence device. In the transition metal complex compound, three ligands are crosslinked with a crosslinking group having a saturated cyclic structure or a saturated polycyclic structure in a tripod manner. The organic electroluminescence device includes an organic thin film layer composed of one or multiple layers including at least a light emitting layer, the organic thin film layer being interposed between a pair of electrodes. In the organic electroluminescence device, at least one layer of the organic thin film layer contains the transition metal complex compound.

The present invention provides a transition metal complex compound of a specific structure having a metal carbene bond, a production process for the same and an organic EL device in which an organic thin film layer comprising a single layer or plural layers having at least a luminescent layer is interposed between an anode and a cathode, wherein at least one layer in the above organic thin film layers contains the transition metal complex compound having a metal carbene bond described above. Provided are a novel transition metal complex compound having a metal carbene bond which has an electroluminescent characteristic and which can provide an organic electroluminescent device having a high luminous efficiency and a production process for a transition metal complex compound.

This invention relates to a catalyst system for the production of polyolefins comprising:(A) a Group IV B transition metal component represented by one of the two general formulaewherein(C5H5-y-xRx) is a cylopentadienyl ring(JR′z-l-y) is a heteroatom ligand in which J is an element with a coordination number of three from Group V-A or an element with a coordination number of two rom Group VI-A of the Periodic Table of Elements,each Q is independently, hydride, C1—C20 hydrocarbyl radicals, substituted hydrocarbyl radials wherein one or more hydrogen atoms is replaced by an electron withdrawing group, or C1—C20 hydrocarbyl-substituted metalloid radicals wherein the metalloid is selected from the group consisting of germanium and silicon, provided that Q is not a substituted or unsubstituted cyclopentadienyl ring, or both Q together may be an alkylidene, olefin, acetylene or a cyclometallated hydrocarbyl;“y” is 0 or 1; when “y” is 1, T is a covalent bridging group containing a Group IV-A or V-A element;L is a neutral Lewis base; and “w” is a number from 0 to 3;(B) an activator compound comprising (1) a cation; and (2) a compatible noncoordinating anion.

A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX2 layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.

Disclosed are a transition metal dichalcogenide alloy and a method of manufacturing the same. A method of manufacturing a transition metal dichalcogenide alloy according to an embodiment of the present disclosure includes a step of depositing transition metal dichalcogenide on a substrate using atomic layer deposition (ALD); and a step of forming a transition metal dichalcogenide alloy by thermally treating the transition metal dichalcogenide with a sulfur compound.

Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a surface of a substrate. The surface treatment may reactivate a surface of the substrate toward the blocking material, may restore the blocking material after degradation occurs during the ALD process, and / or may coat the blocking material to prevent further degradation during the ALD process. For example, the surface treatment may be applied after performing one or more ALD cycles. Accordingly, the presently disclosed methods enable in situ restoration of blocking materials in ALD process that are generally incompatible with the blocking material and also enables selective deposition in recessed structures.

A process for the selective removal of a substance from a substrate for etching and / or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

The present invention comprises an aluminum base material 2 constituting the plasma processing chamber of the plasma processing apparatus, a bonding layer 3 deposited on the base material consisting of a transition metal or transition metal alloy that modifies the difference in thermal expansion coefficient of the base material and the material constituting a plasma contact surface, and the plasma contact surface 1 formed of a material selected from a group consisting of La2O3, LaAlO3, MgLaAl11O19, and a mixture of La2O3 and Al2O3 being a metal oxide including at least La and O deposited on the bonding layer 3 via a thermal spray process.

A compound comprising a composition Ax(M′1-aM″a)y(XD4)z, Ax(M′1-aM″a)y(DXD4)z, or Ax(M′1-aM″a)y(X2D7)z, and have values such that x, plus y(1-a) times a formal valence or valences of M′, plus ya times a formal valence or valence of M″, is equal to z times a formal valence of the XD4, X2D7, or DXD4 group; or a compound comprising a composition (A1-aM″a)xM′y(XD4)z, (A1-aM″a)xM′y(DXD4)z(A1-aM″a)xM′y(X2D7)z and have values such that (1-a)x plus the quantity ax times the formal valence or valences of M″ plus y times the formal valence or valences of M′ is equal to z times the formal valence of the XD4, X2D7 or DXD4 group. In the compound, A is at least one of an alkali metal and hydrogen, M′ is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M″ any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001<a≦0.1, and x, y, and z are greater than zero. The compound can have a conductivity at 27° C. of at least about 10−8 S / cm. The compound can be a doped lithium phosphate that can intercalate lithium or hydrogen. The compound can be used in an electrochemical device including electrodes and storage batteries and can have a gravimetric capacity of at least about 80 mAh / g while being charged / discharged at greater than about C rate of the compound.

The present invention relates to square planar transition metal complexes and their use in organic semiconductive materials as well as in electronic or optoelectronic components.

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Transition metal precursors are disclosed herein along with methods of using these precursors to deposit metal thin films. Advantageous properties of these precursors and methods are also disclosed, as well as superior films that can be achieved with the precursors and methods.

The catalyst for polymerization and copolymerization of olefine is one novel kind of group III to group XIII transition metal complex of tridentate ligand.

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

The present invention relates to a catalyst or catalyst system for polymerization and copolymerization of olefine and its synthesis process and the application in catalyzing olefine polymerization. The catalyst is a kind III to XI transition metal compound with multitooth ligand.

A device comprises at least one organophosphonium transition metal dye or is provided with a filter, comprising at least one organophosphonium transition metal dye, wherein, in a particular embodiment said device is selected from the group consisting of a scanner, a digitizer, a display and a photographic device.

Organic light emitting devices are described wherein the emissive layer comprises a host material containing an emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the heterostructure, and the emissive molecule is selected from the group of phosphorescent organometallic complexes, including cyclometallated platinum, iridium and osmium complexes. The organic light emitting devices optionally contain an exciton blocking layer. Furthermore, improved electroluminescent efficiency in organic light emitting devices is obtained with an emitter layer comprising organometallic complexes of transition metals of formula L2MX, wherein L and X are distinct bidentate ligands. Compounds of this formula can be synthesized more facilely than in previous approaches and synthetic options allow insertion of fluorescent molecules into a phosphorescent complex, ligands to fine tune the color of emission, and ligands to trap carriers.

Disclosed is a method of producing hydrocarbons from oxygenated hydrocarbon reactants, such as glycerol, glucose, or sorbitol. The method can take place in the vapor phase or in the condensed liquid phase (preferably in the condensed liquid phase). The method includes the steps of reacting water and a water-soluble oxygenated hydrocarbon having at least two carbon atoms, in the presence of a metal-containing catalyst. The catalyst contains a metal selected from the group consisting of Group VIIIB transitional metals, alloys thereof, and mixtures thereof. These metals are supported on supports that exhibit acidity or the reaction is conducted under liquid-phase conditions at acidic pHs. The disclosed method allows the production of hydrocarbon by the liquid-phase reaction of water with biomass-derived oxygenated compounds.

Methods for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.

A powder material which can electrochemically store and release lithium ions rapidly in a large amount is provided. In addition, an electrode structure for an energy storage device which can provide a high energy density and a high power density and has a long life, and an energy storage device using the electrode structure are provided. In a powder material which can electrochemically store and release lithium ions, the surface of particles of one of silicon metal and tin metal and an alloy of any thereof is coated by an oxide including a transition metal element selected from the group consisting of W, Ti, Mo, Nb, and V as a main component. The electrode structure includes the powder material. The battery device includes a negative electrode having the electrode structure, a lithium ion conductor, and a positive electrode, and utilizes an oxidation reaction of lithium and a reduction reaction of lithium ion.

A field effect gas sensor, for detecting a presence of a gaseous substance in a gas mixture, the field effect gas sensor comprising: a SiC semiconductor structure; an electron insulating layer covering a first portion of the SiC semiconductor structure; a first contact structure at least partly separated from the SiC semiconductor structure by the electron insulating layer; and a second contact structure conductively connected to a second portion of the SiC semiconductor structure, wherein at least one of the electron insulating layer and the first contact structure is configured to interact with the gaseous substance to change an electrical property of the SiC semiconductor structure; and wherein the second contact structure comprises: an ohmic contact layer in direct contact with the second portion of the SiC semiconductor structure; and a barrier layer formed by an electrically conducting mid-transition-metal oxide covering the ohmic contact layer.

The present invention pertains to a method for manufacturing alkylate oil using a composite ionic liquid as catalyst. A mixture of isobutane and C4 olefins is used as the raw material, and a composite ionic liquid is used as catalyst to carry out an alkylation reaction. The alkane / olefin ratio in the raw material is higher than 1:1. In the composition of the aforementioned composite ionic liquid catalyst, the cations come from a hydrohalide of an alkyl-containing amine or pyridine, while the anions are composite coordinate anions coming from two or more metal compounds. One of the metal compounds is an aluminum compound, while other metal compounds are compounds of Group IB and Group IIB elements of the Periodic Table and the transition metals. The present invention also provides a design of static mixer reaction apparatus that can realize the aforementioned manufacturing method. The method of the present invention increases the selectivity of the alkylation reaction to give the alkylation product a relatively high octane number and further increase the product yield. Also, the manufacturing operation is simplified, and the cost can be reduced. This method is an environmentally friendly method that will not pollute the environment.

A method for the synthesis of compounds of the formula C-LixM1-yM'y(XO4)n, where C represents carbon cross-linked with the compound LixM1-yM'y(XO4)n, in which x, y and n are numbers such as 0<=x<=2, 0<=y<=0.6, and 1<=n<=1.5, M is a transition metal or a mixture of transition metals from the first period of the periodic table, M' is an element with fixed valency selected among Mg<2+>, Ca<2+>, Al<3+>, Zn<2+> or a combination of these same elements and X is chosen among S, P and Si, by bringing into equilibrium, in the required proportions, the mixture of precursors, with a gaseous atmosphere, the synthesis taking place by reaction and bringing into equilibrium, in the required proportions, the mixture of the precursors, the procedure comprising at least one pyrolysis step of the carbon source compound in such a way as to obtain a compound in which the electronic conductivity measured on a sample of powder compressed at a pressure of 3750 Kg.cm<-2 >is greater than 10<-8 >S.cm<-1>. The materials obtained have excellent electrical conductivity, as well a very improved chemical activity.

Disclosed is a method of producing hydrogen from oxygenated hydrocarbon reactants, such as methanol, glycerol, sugars (e.g. glucose and xylose), or sugar alcohols (e.g. sorbitol). The method takes place in the condensed liquid phase. The method includes the steps of reacting water and a water-soluble oxygenated hydrocarbon in the presence of a metal-containing catalyst. The catalyst contains a metal selected from the group consisting of Group VIIIB transitional metals, alloys thereof, and mixtures thereof. The disclosed method can be run at lower temperatures than those used in the conventional steam reforming of alkanes.

A low temperature chemical route to efficiently produce nanomaterials is described. The nanomaterials are synthesized by intercalating ions into layered compounds, exfoliating to create individual layers and then sonicating to produce nanotubes, nanorods, nanoscrolls and / or nanosheets. It is applicable to various different layered inorganic compounds (for example, bismuth selenides / tellurides, graphite, and other metal complexes, particularly transition metal dichalcogenides compounds including oxygen, sulfur, tellurium or selenium).

Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

The present invention pertains to a method for manufacturing alkylate oil using a composite ionic liquid as catalyst. A mixture of isobutane and C4 olefins is used as the raw material, and a composite ionic liquid is used as catalyst to carry out an alkylation reaction. The alkane / olefin ratio in the raw material is higher than 1:1. In the composition of the aforementioned composite ionic liquid catalyst, the cations come from a hydrohalide of an alkyl-containing amine or pyridine, while the anions are composite coordinate anions coming from two or more metal compounds. One of the metal compounds is an aluminum compound, while other metal compounds are compounds of Group IB and Group IIB elements of the Periodic Table and the transition metals. The present invention also provides a design of static mixer reaction apparatus that can realize the aforementioned manufacturing method. The method of the present invention increases the selectivity of the alkylation reaction to give the alkylation product a relatively high octane number and further increase the product yield. Also, the manufacturing operation is simplified, and the cost can be reduced. This method is an environmentally friendly method that will not pollute the environment.

Disclosed is a method of producing hydrogen from oxygenated hydrocarbon reactants, such as glycerol, glucose, or sorbitol. The method can take place in the vapor phase or in the condensed liquid phase. The method includes the steps of reacting water and a water-soluble oxygenated hydrocarbon having at least two carbon atoms, in the presence of a metal-containing catalyst. The catalyst contains a metal selected from the group consisting of Group VIII transitional metals, alloys thereof, and mixtures thereof. The disclosed method can be run at lower temperatures than those used in the conventional steam reforming of alkanes.