37038 results about "Ammonia" patented technology

A process for producing an oxime is provided, wherein the process comprises the step of reacting a ketone, hydrogen peroxide and ammonia in the presence of a crystalline titanosilicate having MWW structure under the condition that the ammonia concentration in the liquid portion of the reaction mixture is about 1% by weight or more. By the process, an ammoximation reaction of the ketone can be carried out with a high conversion of the ketone and a high selectivity to the oxime corresponding to the ketone, thereby producing the oxime with a high yield.

Embodiments of the invention provide treatment processes to reduce substrate contamination during a fabrication process within a vapor deposition chamber. A treatment process may be conducted before, during or after a vapor deposition process, such as an atomic layer deposition (ALD) process. In one example of an ALD process, a process cycle, containing an intermediate treatment step and a predetermined number of ALD cycles, is repeated until the deposited material has a desired thickness. The chamber and substrates may be exposed to an inert gas, an oxidizing gas, a nitriding gas, a reducing gas or plasmas thereof during the treatment processes. In some examples, the treatment gas contains ozone, water, ammonia, nitrogen, argon or hydrogen. In one example, a process for depositing a hafnium oxide material within a batch process chamber includes a pretreatment step, an intermediate step during an ALD process and a post-treatment step.

Biomass is pretreated using a low concentration of aqueous ammonia at high biomass concentration. Pretreated biomass is further hydrolyzed with a saccharification enzyme consortium. Fermentable sugars released by saccharification may be utilized for the production of target chemicals by fermentation.

One or more highly-oriented, multi-walled carbon nanotubes are grown on an outer surface of a substrate initially disposed with a catalyst film or catalyst nano-dot by plasma enhanced hot filament chemical vapor deposition of a carbon source gas and a catalyst gas at temperatures between 300° C. and 3000° C. The carbon nanotubes range from 4 to 500 nm in diameter and 0.1 to 50 μm in length depending on growth conditions. Carbon nanotube density can exceed 104 nanotubes / mm2. Acetylene is used as the carbon source gas, and ammonia is used as the catalyst gas. Plasma intensity, carbon source gas to catalyst gas ratio and their flow rates, catalyst film thickness, and temperature of chemical vapor deposition affect the lengths, diameters, density, and uniformity of the carbon nanotubes. The carbon nanotubes of the present invention are useful in electrochemical applications as well as in electron emission, structural composite, material storage, and microelectrode applications.

Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N′-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure including a lower electrode. An ammonia (NH3) plasma is provided onto the substrate to form a dielectric layer including aluminum nitride on the substrate including the lower electrode. An upper electrode is formed on the dielectric layer. A second dielectric layer may be provided oil the first dielectric layer

An apparatus, system, and method are disclosed for generating a gas. One or more liquid permeable pouches each define a cavity that contains a solid anhydrous reactant, such as a chemical hydride. A reaction chamber made of a heat, chemical and / or pressure resistant material receives the one or more pouches from a pouch feeder that transfers the one or more pouches into the reaction chamber successively at a feed rate. One or more liquid sources inject a liquid reactant into the reaction chamber so that the liquid reactant contacts a portion of the one or more pouches. The one or more liquid sources inject the liquid reactant at an injection rate that corresponds to the feed rate. A gas outlet releases a gas, such as hydrogen, oxygen, ammonia, borazine, nitrogen, or a hydrocarbon, that is produced by a reaction between the solid reactant and the liquid reactant.

The invention discloses an attapulgite argil powder with an air purifying function. The technical scheme is as follows: the attapulgite argil powder with an air purifying function is prepared from high-viscosity attapulgite clay, an attapulgite constant-humidity conditioner, a natural mineral adsorbing / filtering agent, Cacumen Biotae, aluminum silicate fiber and polyacrylamide. The attapulgite argil powder is prepared by the following steps: pulverizing the materials, soaking and aging to obtain a wet mixture, extruding the wet mixture into a strip, airing the strip, pulverizing to obtain powder, and packaging to obtain the finished product. The attapulgite argil powder has favorable cohesive property, plasticity, thixotropy, fire resistance and thermal stability; the pottery prepared from the attapulgite argil powder with an air purifying function contains a great deal of micropores and activated carbon, thus, has the characteristics of low shrinkage, no cracking or deformation and favorable adsorbability, and can effectively adsorb formaldehyde, ammonia, benzene and other harmful substances in the air, thereby protecting the environment and improving good health of people. The invention is suitable for producing pottery artware with an air purifying function.

Provided is an emission treatment system and method for simultaneously remediating the nitrogen oxides (NOx), particulate matter, and gaseous hydrocarbons present in diesel engine exhaust streams. The emission treatment system has an oxidation catalyst upstream of a soot filter coated with a material effective in the Selective Catalytic Reduction (SCR) of NOx by a reductant, e.g., ammonia. Also provided is a method for disposing an SCR catalyst composition on a wall flow monolith that provides adequate catalyst loading, but does not result in unsuitable back pressures in the exhaust.

An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.

Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates b the reaction of alternating doses of cobalt(II) bis(N,N′-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3 / NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.

A Ge—Sb—Te film forming method includes a Sb source material introducing process, a first purging process, a Te source material introducing process, a second purging process, a Ge source material introducing process, a third purging process. An additive gas containing at least one of ammonia, methylamine, dimethylamine, hydrazine, monomethylhydrazine, dimethylhydrazine and pyridine is introduced in at least one of the Sb, Te and Ge source material introducing processes and the first to third purging processes.

Provided is an emissions treatment system and method for reducing NOx emissions in the exhaust stream produced from an internal combustion engine. The system has an injector for periodically metering ammonia or an ammonia precursor into an exhaust stream; and a first substrate with a first SCR catalyst composition, downstream of the injector. The first substrate has an inlet end, an outlet end, a length extending between the inlet end to the outlet end, wall elements and a plurality of passages defined by the wall elements. The first SCR catalyst composition is disposed on the wall elements from the inlet end toward the outlet end to a length that is less than the substrate's axial length to form an inlet zone. The first substrate also has an NH3 destruction catalyst composition with a platinum group metal component dispersed on a refractory metal oxide. The NH3 destruction catalyst is disposed on the wall elements from the outlet end toward the inlet end to a length that is less than the substrate's axial length to form an outlet zone. Generally, there is from 0.1 to 10 g / ft3 of platinum group metal component in the outlet zone.

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and / or hydrogen and / or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2 / H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.

One aspect of the invention relates to controlling the ammonia feed rate to an SCR reactor using a NOx sensor cross-sensitive to ammonia. The sensor, positioned downstream of the reactor, is interrogated by introducing a pulse in the ammonia feed rate. A positive response to a positive pulse indicates ammonia slip. A negative response to a positive pulse indicates NOx breakthrough. Another aspect of the invention related to a combination of feed-back and feed-forward control. Upon detecting ammonia slip, the controller enters into an ammonia slip recovery mode in which the ammonia feed rate is reduced for a period to restore the reactor's ammonia or NOx buffering capacity. After the recovery period, feed-forward control is restored, optionally with an updated control objective. A further aspect of the invention relates to a learning probabilistic model for feed-forward control trained according to the occurrence or non-occurrence of NOx breakthrough and ammonia slip.

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

One aspect of the invention relates an exhaust treatment system having an SCR reactor following a NOx adsorber. Syn gas is used to regenerate the NOx adsorber. Another aspect relates to an LNT / SCR provided with an ammonia source separate from the LNT. A further aspect relates to a system comprising first and second LNTs and one or more SCRs downstream of the LNTs. A still further aspect relates to a device comprising first and second NOx adsorbers contained in a single housing. Another aspect relates to coating a surface of a moving part in an exhaust system with an oxidation catalyst to mitigate fouling. Additional aspects of the invention relate to strategies for controlling one or more of the time to initiate a regeneration cycle, the time to terminate a regeneration cycle, and the reductant injection rate during regeneration of LNT / SCR exhaust treatment systems.

A pharmaceutical composition comprising a co-crystal of an API and a co-crystal former; wherein the API has at least one functional group selected from ether, thioether, alcohol, thiol, aldehyde, ketone, thioketone, nitrate ester, phosphate ester, thiophosphate ester, ester, thioester, sulfate ester, carboxylic acid, phosphonic acid, phosphinic acid, sulfonic acid, amide, primary amine, secondary amine, ammonia, tertiary amine, sp2 amine, thiocyanate, cyanamide, oxime, nitrile diazo, organohalide, nitro, s-heterocyclic ring, thiophene, n-heterocyclic ring, pyrrole, o-heterocyclic ring, furan, epoxide, peroxide, hydroxamic acid, imidazole, pyridine and the co-crystal former has at least one functional group selected from amine, amide, pyridine, imidazole, indole, pyrrolidine, carbonyl, carboxyl, hydroxyl, phenol, sulfone, sulfonyl, mercapto and methyl thio, such that the API and co-crystal former are capable of co-crystallizing from a solution phase under crystallization conditions.

Water-soluble solvent compositions, including from about 10% to about 60% by weight of an aromatic ester; from about 30% to about 60% by weight of an aliphatic ester; from 0% to about 15% by weight of a co-solvent; from 0% to about 20% of one of a cyclic terpene and a terpenoid; from 0% to about 1% by weight of an odor-masking agent; and from 0% to about 20% by weight of a nonionic surfactant, for removing petroleum residue from a substrate, and methods of use thereof. The composition can further comprise water. The composition also can comprise an aqueous solution. The method for removing petroleum residue from a substrate can further comprise recycling the solvent composition by using a countercurrent separation column charged with compressed ammonia and / or carbon dioxide and a spinning band distillation column to separate the solvent composition from the petroleum residue.

Particulate compositions are described comprising an intimate mixture of a coal and a gasification catalyst. The particulate compositions are gasified in the presence of steam to yield a plurality of gases including methane and at least one or more of hydrogen, carbon monoxide, carbon dioxide, hydrogen sulfide, ammonia and other higher hydrocarbons. Processes are also provided for the preparation of the particulate compositions and converting the particulate composition into a plurality of gaseous products.

Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes such ammonia. An environmental control system employing nanoelectronic sensors is described. A personnel safety system configured as a disposable badge employing nanoelectronic sensors is described. A method of dynamic sampling and exposure of a sensor providing a number of operational advantages is described.

A portable peritoneal dialysis system for a patient includes an inlet port for providing inflow to the patient's peritoneal cavity, an outlet port for providing outflow from the patient's peritoneal cavity, and a volume of dialysate for flow into and out of the patient's peritoneal cavity, thereby removing from the dialysate uremic waste metabolites that have diffused into the dialysate. The portable peritoneal dialysis system also includes a closed liquid flow loop, including a pump, for flowing the dialysate into and out of the patient's peritoneal cavity, and an organic- and phosphate-removing stage, including at least one replaceable cartridge in the closed liquid flow loop, the cartridge containing material for removing organic compounds and phosphate from dialysate removed from the patient's peritoneal cavity. The portable peritoneal dialysis system further includes a urea- and ammonia-removing stage, including at least one replaceable cartridge in the closed liquid flow loop, the cartridge containing material for removing urea and ammonia from dialysate removed from the patient's peritoneal cavity, the material being packed around semi-permeable hollow fibers with interior fiber walls that reject cations, thereby retaining cations in the dialysate.

The invention discloses an attapulgite argil powder with an air purifying function. The technical scheme is as follows: the attapulgite argil powder with an air purifying function is prepared from high-viscosity attapulgite clay, an attapulgite constant-humidity conditioner, a natural mineral adsorbing / filtering agent, Cacumen Biotae, aluminum silicate fiber and polyacrylamide. The attapulgite argil powder is prepared by the following steps: pulverizing the materials, soaking and aging to obtain a wet mixture, extruding the wet mixture into a strip, airing the strip, pulverizing to obtain powder, and packaging to obtain the finished product. The attapulgite argil powder has favorable cohesive property, plasticity, thixotropy, fire resistance and thermal stability; the pottery prepared from the attapulgite argil powder with an air purifying function contains a great deal of micropores and activated carbon, thus, has the characteristics of low shrinkage, no cracking or deformation and favorable adsorbability, and can effectively adsorb formaldehyde, ammonia, benzene and other harmful substances in the air, thereby protecting the environment and improving good health of people. The invention is suitable for producing pottery artware with an air purifying function.

Systems for converting a carbonaceous feedstock into a plurality of gaseous products are described. The systems include, among other units, two separate gasification reactors to convert a carbonaceous feedstock in the presence of an alkali metal catalyst into the plurality of gaseous products including at least methane. Each of the gasification reactors may be supplied with the feedstock from a single or separate catalyst loading and / or feedstock preparation unit operations. Similarly, the hot gas streams from each gasification reactor may be purified via their combination at a heat exchanger, acid gas removal, or methane removal unit operations. Product purification may comprise trace contaminant removal units, ammonia removal and recovery units, and sour shift units.

Catalysts and catalytic articles for treating exhaust gas streams are described. In one or more embodiments, a catalyst system includes a first zone to abate nitrogen oxides by selective catalytic reduction, a second zone to oxidize ammonia and a third zone to oxidize carbon monoxide and hydrocarbons. Methods for treating the exhaust gas stream are also provided. Methods of making and using such catalysts and catalytic articles are also described.

Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.