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5971 results about "Plasma treatment" patented technology

Plasma treatment uses a controlled vacuum plasma to alter the surface of a material in order to improve bonding, printing, painting, coating, or wettability. The process is performed in a plasma chamber under vacuum pressure. It is commonly used in the manufacturing of electronic devices, medical devices, textiles, plastics, rubbers, and more.

Apparatus and process for plasma-enhanced atomic layer deposition

Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a process chamber is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, a chamber body and a gas manifold assembly are grounded and separated by electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.
Owner:APPLIED MATERIALS INC

Vapor deposition method for ternary compounds

Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.
Owner:APPLIED MATERIALS INC

Method of and apparatus for tunable gas injection in a plasma processing system

A method of and apparatus for providing tunable gas injection in a plasma processing system (10, 10′). The apparatus includes a gas injection manifold (50) having a pressurizable plenum (150) and an array of adjustable nozzle units (250), or an array of non-adjustable nozzles (502, 602), through which gas from the plenum can flow into the interior region (40) of a plasma reactor chamber (14) capable of containing a plasma (41). The adjustable nozzle units include a nozzle plug (160) arranged within a nozzle bore (166). A variety of different nozzle units are disclosed. The nozzle plugs are axially translatable to adjust the flow of gas therethrough. In one embodiment, the nozzle plugs are attached to a plug plate (154), which is displacable relative to an injection plate (124) via displacement actuators (170) connecting the two plates. The displacement actuators are controlled by a displacement actuator control unit (180), which is in electronic communication with a plasma processing system control unit (80). The gas flow into the chamber interior region is preferably controlled by monitoring the pressure in the plenum and in the chamber and adjusting the nozzle units accordingly. Where the nozzle units are not adjustable, a portion of the nozzles are sized to a first flow condition, and another portion of the nozzles are sized to a second flow condition.
Owner:TOKYO ELECTRON LTD

Plasma uniformity control by gas diffuser curvature

Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
Owner:APPLIED MATERIALS INC

Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure

Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition / curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.
Owner:APPLIED MATERIALS INC

Plasma processing apparatus

In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.
Owner:TOKYO ELECTRON LTD

Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure

Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition / curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.
Owner:APPLIED MATERIALS INC

Method of cleaning etching apparatus

ActiveUS20060191555A1Clean interiorMaintain repeatabilityHollow article cleaningElectrostatic cleaningBoron trichlorideOxygen
To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
Owner:HITACHI HIGH-TECH CORP

Method of cleaning a chemical vapor deposition chamber

After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and / or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted and removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.
Owner:SAMSUNG ELECTRONICS CO LTD

Shower plate for plasma processing apparatus and plasma processing apparatus

There is disclosed a shower plate 1, wherein the shower plate has a plurality of holes 3 for inserting the head of the fastening member and holes 4 for fitting the head are formed integrally along a concentric circle in the outside region of the gas feeding holes 2 on a side facing the supporting member, each hole for fitting extending in one direction of the concentric circle from each hole for insertion, each hole for fitting has a groove portion 4b through which the shank of the fastening member is to pass and a fitting portion 4a which is wider than the groove portion and in which the head of the fastening member is to be fitted, and the head of the fastening member fixed in the supporting member is inserted into the hole for insertion of the shower plate and the shower plate is turned so that the head of the fastening member is fitted in the fitting portion, and thereby the shower plate is supported by the supporting member without exposure of the fastening member. There can be provided a shower plate for a plasma processing apparatus, wherein effective diameter is large enough, contamination of a substrate to be treated can be prevented, it is easy to manufacture, and it is easy to fix to a supporting member.
Owner:SHIN ETSU CHEM IND CO LTD

Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device

Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.
Owner:ADVANCED LCD TECH DEVMENT CENT

Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process

A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.
Owner:TOKYO ELECTRON LTD

Deposition of SiN

Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.
Owner:ASM IP HLDG BV

Hydrogen treatment enhanced gap fill

ActiveUS7211525B1Reduce and eliminate depositionReduce or eliminate the need for etch stepsSemiconductor/solid-state device manufacturingChemical vapor deposition coatingDielectric membranePhysical chemistry
Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.
Owner:NOVELLUS SYSTEMS

High productivity plasma processing chamber

Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.
Owner:APPLIED MATERIALS INC

Plasma curing process for porous low-k materials

InactiveUS6913796B2Improving elastic modulusImproving material hardnessSilicaLayered productsHardnessMaterials science
Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material. The post-plasma treated, plasma cured porous dielectric material has a dielectric constant between about 1.1 and about 3.5 and an improved elastic modulus and hardness.
Owner:DOW CORNING CORP

Substrate supporting table, method for producing same, and processing system

A plasma processing system has a susceptor, provided in a processing vessel, for supporting thereon a substrate. A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film formed on a base, and a plurality of protrusions formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.
Owner:USHIODA JOICHI +3

Atomic layer deposition of silicon carbon nitride based materials

A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.
Owner:ASM IP HLDG BV

Method of plasma treatment using amplitude-modulated RF power

A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.
Owner:ASM JAPAN
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