18542 results about "Dielectric" patented technology

An electrosurgical stapling instrument includes an end effector capable of applying bipolar RF energy into tissue. The end effector has a first pole electrode and a second pole electrode for forming an RF contact circuit with tissue. At least one of the electrodes may have a dielectric coating thereon to create a RF circuit with tissue. The dielectric coating can cover one of the electrodes to create a capacitive coupling circuit with tissue, or can have at least one open passageway extending through the dielectric coating to enable tissue contact with the electrode and the passage of RF energy therethrough. The dielectric coating on the electrode can be masked to create passageways through the dielectric, or the dielectric coating can be locally removed with a variety of techniques to form passageways. The dielectric coating may provide a barrier to prevent shorting between the dielectrically coated electrode and a conductive fastener embedded within tissue. Alternately, a cartridge coating can be used to reduce an electric surface sheet charge on the cartridge thermoplastic that can occur during the application of RF energy to tissue.

Apparatus and methods are disclosed for simultaneously tracking multiple finger and palm contacts as hands approach, touch, and slide across a proximity-sensing, compliant, and flexible multi-touch surface. The surface consists of compressible cushion dielectric, electrode, and circuitry layers. A simple proximity transduction circuit is placed under each electrode to maximize signal-to-noise ratio and to reduce wiring complexity. Such distributed transduction circuitry is economical for large surfaces when implemented with thin-film transistor techniques. Scanning and signal offset removal on an electrode array produces low-noise proximity images. Segmentation processing of each proximity image constructs a group of electrodes corresponding to each distinguishable contact and extracts shape, position and surface proximity features for each group. Groups in successive images which correspond to the same hand contact are linked by a persistent path tracker which also detects individual contact touchdown and liftoff. Combinatorial optimization modules associate each contact's path with a particular fingertip, thumb, or palm of either hand on the basis of biomechanical constraints and contact features. Classification of intuitive hand configurations and motions enables unprecedented integration of typing, resting, pointing, scrolling, 3D manipulation, and handwriting into a versatile, ergonomic computer input device.

A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and / or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and / or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and / or holes and a portion of the film deposited on top and bottom surfaces of the trenches and / or holes.

Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may be formed over the base structure by depositing a first layer comprising silicon nitride on the base structure, depositing a second layer comprising a silicon-based dielectric material on the first layer, and depositing a third layer comprising silicon nitride on the second layer. The first, second, and third layers are deposited in a single processing reactor.

In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.