The invention relates to a semiconductor structure for increasing integration density of a high-voltage integrated circuit device and a manufacturing method. Aiming at the problems of large occupation area of PN junction isolation and penetration diffusion adopted in a high-voltage integrated circuit and high step, high electric field, high stress and poor clamping hidden trouble of conventional deep slot isolation, a deep slot diffusion isolation and deep slot penetration diffusion structure is adopted to realize improvement on the integration density of the high-voltage device and promotion on the performance of the device. The method can reduce over 35 percent of high-voltage integrated circuit area at most, improve the integration density of the high-voltage integrated circuit, thin the thickness of an epitaxial layer compared with the common penetration structure, simplify the process design of the high-voltage integrated circuit device structure and effectively solve the high step, high electric field, high stress and poor clamping hidden trouble of the conventional deep slot isolation structure. The method is applied in the fields of structure design and manufacture of high-voltage semiconductor devices and integrated circuits.