2121results about How to "Reduce depth" patented technology

A method of detecting a lane change of a subject vehicle (20), having a locating device (10) which uses angular resolution for locating vehicles (VEH1, VEH2, VEH3) traveling in front, and a device (44) for determining the yaw rate (ω0) of the subject vehicle. The angular velocity (ωi) of at least one vehicle traveling in front relative to the subject vehicle (20) is measured using the locating device (10), and a lane change signal (LC) indicating the lane change is formed by comparing the measured angular velocity (ωi) to the yaw rate (ω0) of the subject vehicle.

The present invention provides a method of transfer of a first planar substrate with two major surfaces to a second substrate, comprising the steps of forming the first planar substrate, attaching one of the major surfaces of the first planar substrate to a carrier by means of a release layer attaching the other major surface of the first substrate to the second substrate with a curable polymer adhesive layer partly curing the polymer adhesive layer, disconnecting the release layer from the first substrate to separate the first substrate from the carrier, followed by curing the polymer adhesive layer. The method may be used to form a stack of dies (4, 14 . . . ) which are adhered together by cured polymeric layers (7, 17). Each die (4, 14 . . . ) may include a device layer and an ultra-thin substrate manufactured and assembled by the method described above.

A photolithography and etch process sequence includes a photomask having a pattern with compensation features that alleviate patterning variations due to the proximity effect and depth of focus concerns during photolithography. The compensation features may be disposed near isolated or outermost lines of a device pattern. A photoresist pattern is formed to include the compensation features and the pattern etched to form a corresponding etched pattern including the compensation features. After etching, a protection material is formed over the layer and a trim mask is used to form a further photoresist pattern over the protection material. A subsequent etching pattern etches the protection material and removes the compensation features and results in the device lines being formed unaffected by proximity effects. Flare dummies may additionally be added to the mask pattern to increase pattern density and assist in endpoint detection. Flare dummies, like the compensation features, are subsequently removed by a photolithography and etching process sequence.

A lancet depth adjustment assembly structured to be used use with a lancet device of the type including a lancet disposed movably within a housing so as to pass into a piercing orientation wherein a piercing tip of the lancet protrudes from a piercing aperture defined in the housing. The lancet depth adjustment assembly includes a depth adjustment element movably secured in overlying relation to the piercing aperture of the housing and having a piercing access including one or more openings structured to permit passage of the piercing tip of the lancet therethrough. The depth adjustment element is structured to be interposed between a finger of a patient and the piercing aperture so as to define a spacing therebetween, and accordingly define a depth to which the piercing tip, which protrudes a defined amount from the housing, penetrates the body part. Furthermore, the depth adjustment element is constructed of a varying thickness so as to vary the spacing between the body part and the piercing aperture in accordance with a thickness of a portion of the depth adjustment element disposed in overlying relation to the piercing aperture at a time of operation of the lancet device.