A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g.,
silicon), which has a thickness of
semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the thickness of
semiconductor material. The method includes joining the surface region of the substrate to a first
handle substrate. In a preferred embodiment, the first
handle substrate is termed a “thin” substrate, which provides suitable bonding characteristics, can withstand high temperature
processing often desired during the manufacture of
semiconductor devices, and has desirable de-bonding characteristics between it and a second
handle substrate, which will be described in more detail below. In a preferred embodiment, the first handle substrate is also thick enough and rigid enough to allow for cleaving according to a specific embodiment.