A method for forming a single crystalline Group-III
Nitride film. A substrate is provided, having a first
passivation layer, a monocrystalline layer, and a second
passivation layer. The substrate is patterned to form a plurality of features with elongated sidewalls having a second
crystal orientation. Group-III
Nitride films are formed on the elongated sidewalls, but not on the first or second
passivation layers. In one embodiment, the dimensions of the patterned features and the film
deposition process result in a single crystalline Group-III
Nitride film having a third
crystal orientation normal to the
substrate surface. In another embodiment, the dimensions and orientation of the patterned features and the film
deposition process result in a plurality of single crystalline Group-III Nitride films. In other embodiments, additional
layers are formed on the Group-III Nitride film or films to form
semiconductor devices, for example, a light-emitting
diode.