93819 results about "Diode" patented technology

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

A method of producing a diode drive current in an oximeter includes sensing at least a part of a current passing through the diode and converting the sensed current to a sensed voltage, inputting the sensed voltage to a feedback amplifier for stabilizing the current passing through the diode, and eliminating an offset voltage across inputs of the feedback amplifier. A pulse oximeter includes a diode for emitting light flashes, a feedback amplifier having inputs, a feedback capacitor, and an output, the feedback amplifier stabilizing a current passing through the diode, a nulling amplifier having inputs, a nulling capacitor, and an output, the nulling amplifier charging and discharging the feedback capacitor until the inputs of the feedback amplifier are at a same voltage. The operation may include synchronizing an elimination of input offset voltages of the feedback and nulling amplifiers with on or off state of diode current.

An optoelectronic component has a lens that is formed in the surface of an encapsulant surrounding a semiconductor diode element. With respect to emitters, the lens reduces internal reflection and reduces dispersion to increase overall efficiency. With respect to detectors, the lens focuses photons on the active area of the detector, increasing detector sensitivity, which allows a detector having a reduced size and reduced cost for a given application. The lens portion of the encapsulant is generally nonprotruding from the surrounding portions of the encapsulant reducing contact surface pressure caused by the optoelectronic component. This non-protruding lens is particularly useful in pulse oximetry sensor applications. The lens is advantageously formed with a contoured-tip ejector pin incorporated into the encapsulant transfer mold, and the lens shape facilitates mold release.

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

A laser scanning bar code symbol reading system for scanning and reading poor quality and damaged bar code symbols in flexible operating conditions. The system includes a housing having a light transmission window; a dynamically-elongated laser beam production module, including a multi-cavity visible laser diode (VLD), for producing a dynamically-elongated laser beam having (i) a direction of propagation extending along a z reference direction, (ii) a height dimension being indicated by the y reference direction, and (iii) a width dimension being indicated by the x reference direction, where x, y and z directions are orthogonal to each other. Each dynamically-elongated laser beam is characterized by an elongation ratio (ER) that is defined as Y / X where, for any point within the working range of the laser scanning bar code symbol reading system, extending along the z direction, (i) Y indicates the beam height of the dynamically-elongated laser beam measured in the Y reference direction, (ii) X indicates the beam width of the dynamically-elongated laser beam measured in the X reference direction, and (iii) the beam height (Y) and the laser beam width (X) are measured at 1 / e2 intensity clip level. A laser scanning mechanism is provided for scanning the dynamically-elongated laser beam out the light transmission window and across a scanning field defined external to the housing, in which a bar code symbol is present for scanning by the dynamically-elongated laser scanning beam.

Various exemplary implementations of light emitting diode (LED) based illumination products and methods are disclosed including, but not limited to, glow sticks, key chains, toys, balls, various game accessories, light bulbs, night lights, wall lights, wall switches, wall sockets, wall panels, modular lights, flexible lights, automotive lights, wearable accessories, light ropes, decorative lights such as icicles and icicle strings, light tubes, insect control lights and methods, and lighted air fresheners / scent dispensers. Any of the foregoing devices may be equipped with various types of user interfaces (both “local” and “remote”) to control light generated from the device. Additionally, devices may be controlled via light control information or programs stored in device memory and / or transmitted or downloaded to the devices (e.g., devices may be controlled individually or collectively in groups via a network, glow sticks or other products may be downloaded with programming information that is stored in memory, etc.). Devices also may include sensors so that the generated light may change in response to various operating and / or environmental conditions or a user input. Various optical processing devices which may be used with any of the devices (e.g., reflectors, diffusers, etc.) also are disclosed.

A three dimensional monolithic memory comprising a memory cell allowing for increased density is disclosed. In the memory cell of the present invention, a bottom conductor preferably comprising tungsten is formed. Above the bottom conductor a semiconductor element preferably comprises two diode portions and an antifuse. Above the semiconductor element are additional conductors and semiconductor elements in multiple stones of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.

In a novel rewriteable nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NiO, Nb2O5, TiO2, HfO2, Al2O3, MgOx, CrO2, VO, BN, and AlN. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

High-brightness LEDs, combined with a processor for control, can produce a variety of pleasing effects for display and illumination. A system disclosed herein uses high-brightness, processor-controlled LEDs in combination with diffuse materials to produce color-changing effects. The systems described herein may be usefully employed to bring autonomous color-changing ability and effects to a variety of consumer products and other household items. The system may also include sensors so that the illumination of the LEDs might change in response to environmental conditions or a user input. Additionally, the system may include an interface to a network, so that the illumination of the LEDs may be controlled via the network.

One embodiment of the present invention includes a low-cost unipolar rewritable variable-resistance memory device, made of cross-point arrays of memory cells, vertically stacked on top of one another and compatible with a polycrystalline silicon diode.

A light emitting diode (LED) light bulb that includes plural individual elements as sub-assembly elements of the overall light bulb. Different sub-assembly elements of a lens, a LED printed circuit board, a housing also functioning as a heat sink, a lower housing, and other individual sub-assembly components are utilized. The LED printed circuit board sub-assembly containing the LEDs can also be provided relatively close to a base.

According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source conductive layer spreading two-dimensionally to be connected to one ends of the plurality of memory devices.

A system for determining a biologic constituent including hematocrit transcutaneously, noninvasively and continuously. A finger clip assembly includes including at least a pair of emitters and a photodiode in appropriate alignment to enable operation in either a transmissive mode or a reflectance mode. At least one predetermined wavelength of light is passed onto or through body tissues such as a finger, earlobe, or scalp, etc. and attenuation of light at that wavelength is detected. Likewise, the change in blood flow is determined by various techniques including optical, pressure, piezo and strain gage methods. Mathematical manipulation of the detected values compensates for the effects of body tissue and fluid and determines the hematocrit value. If an additional wavelength of light is used which attenuates light substantially differently by oxyhemoglobin and reduced hemoglobin, then the blood oxygen saturation value, independent of hematocrit may be determined. Further, if an additional wavelength of light is used which greatly attenuates light due to bilirubin (440 nm) or glucose (1060 nm), then the bilirubin or glucose value may also be determined. Also how to determine the hematocrit with a two step DC analysis technique is provided. Then a pulse wave is not required, so this method may be utilized in states of low blood pressure or low blood flow.

In a novel nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy, NbxOy, TixOy, HFxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors. The memory cell of the present invention can be used as a rewriteable memory cell or a one-time-programmable memory cell, and can store two or more data states.

A lighting device, comprising at least one solid state light emitter, at least one first lumiphor and at least one second lumiphor which is spaced from the first lumiphor. The solid state light emitter can be a light emitting diode. A method of making a lighting device, comprising positioning at least one second lumiphor spaced from and outside of at least one first lumiphor relative to at least one solid state light emitter. A method of lighting, comprising providing electricity to at least one solid state light emitter in such a lighting device.

The LED brightness control system for a wide range of luminance control includes a brightness control module that provides a pulse width modulation (PWM) control signal and a peak current control signal. A pulse width modulation (PWM) converter circuit receives the PWM control signal and converts it to a PWM signal. A multiplier receives the PWM signal and the peak current control signal from the brightness control module and multiplies the same to provide a light emitting diode (LED) current control signal with a variable “on” time as well as variable “on” level. A voltage-controlled current source utilizes the LED current control signal and an LED current feedback signal for providing an LED current. An LED illuminator array receives the LED current. A current sensing element connected to the LED illuminator array for providing an LED current feedback signal representing LED peak current. The voltage-controlled current source controls a drive voltage to the LED illuminator array at a commanded level.

Compositions are provided comprising aqueous dispersions of at least one polypyrrole and at least one colloid-forming polymeric acids at methods of making such compositions. The new compositions are useful in electronic devices including organic electronic devices such as organic light emitting diode displays, memory storage, electromagnetic shielding, electrochromic displays,and thin film transistors, field effect resistance devices.

A monitor configuration system which communicates with a physiological sensor, the monitor configuration system including one or more processors and an instrument manager module running on the one or more processors. At least one of the one or more processors communicates with the sensor and calculates at least one physiological parameters responsive to the sensor. The instrument manager controls the calculation, display and / or alarms based upon the physiological parameters. A configuration indicator identifies the configuration profile. In one aspect of the invention, the physiological sensor is a optical sensor that includes at least one light emitting diode and at least one detector.

High-brightness LEDs, combined with a processor for control, can produce a variety of pleasing effects for display and illumination. A system disclosed herein uses high-brightness, processor-controlled LEDs in combination with diffuse materials to produce color-changing effects. The systems described herein may be usefully employed to bring autonomous color-changing ability and effects to a variety of consumer products and other household items. The system may also include sensors so that the illumination of the LEDs might change in response to environmental conditions or a user input. Additionally, the system may include an interface to a network, so that the illumination of the LEDs may be controlled via the network.

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

A white light emitting lamp is disclosed comprising a solid state ultra violet (UV) emitter that emits light in the UV wavelength spectrum. A conversion material is arranged to absorb at least some of the light emitting from the UV emitter and re-emit light at one or more different wavelengths of light. One or more complimentary solid state emitters are included that emit at different wavelengths of light than the UV emitter and the conversion material. The lamp emits a white light combination of light emitted from the complimentary emitters and from the conversion material, with the white light having high efficacy and good color rendering. Other embodiments of white light emitting lamp according to the present invention comprises a solid state laser instead of a UV emitter. A high flux white emitting lamp embodiment according to the invention comprises a large area light emitting diode (LED) that emits light at a first wavelength spectrum and includes a conversion material. A plurality of complimentary solid state emitters surround the large area LED, with each emitter emitting light in a spectrum different from the large area LED and conversion material such that the lamp emits a balanced white light. Scattering particles can be included in each of the embodiments to scatter the light from the emitters, conversion material and complimentary emitters to provide a more uniform emission.

A compound for an organic optoelectronic device represented by Chemical Formula 1wherein, in Chemical Formula 1, variables A, Y1 to Y4, X1, m, R1 to R4, L1 to L3, n1 to n3, Ar1 and Ar2 are described in the specification.