1635results about How to "Increase the aperture ratio" patented technology

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters or a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Powder desiccant is mixed into a seal which adheres a first substrate to a second substrate, thereby sealing a display region. Almost no moisture permeates through the outer surfaces of the substrates sandwiching the display region, while moisture permeating through the seal is adsorbed by the desiccant. An emissive layer is thereby prevented from deterioration due to moisture. By covering the display region with a resin sealing layer composed of resin having desiccant mixed therein, the display region can reliably be protected from moisture. By forming a groove in the substrate and placing a desiccant therein, moisture can be further reliably adsorbed.

A touch sensor integrated display device is provided comprising gate lines and data lines formed on a substrate to be intersected with each other, a plurality of pixel electrodes formed at intersections between the gate lines and the data lines, and a common electrode formed to overlap the plurality of pixel electrodes through an insulating film disposed between the common electrode and the plurality of pixel electrodes, wherein the common electrode includes at least two touch electrodes, each of which is connected to at least one of signal lines arranged in one of a first direction and a second direction crossing the first direction.

An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

A liquid crystal display of the invention includes a plurality of pixels each of which has a liquid crystal layer and a plurality of electrodes for applying a voltage to the liquid crystal layer and which are arranged in a matrix of rows and columns, wherein: each of the plurality of pixels has a first sub-pixel and a second sub-pixel which can apply mutually different voltages to the liquid crystal layer, where the first sub-pixel has a higher brightness than the second sub-pixel in certain gradations; the first sub-pixel and the second sub-pixel each has: a liquid crystal capacitor formed by a counter electrode and a sub-pixel electrode opposing the counter electrode via the liquid crystal layer, and a storage capacitor formed by a storage capacitor electrode connected electrically to the sub-pixel electrode, an insulating layer, and a storage capacitor counter electrode opposing the storage capacitor electrode via the insulating layer; the counter electrode is a single electrode shared by the first sub-pixel and the second sub-pixel, and the storage capacitor counter electrodes of the first sub-pixel and the second sub-pixel are electrically independent of each other; and the storage capacitor counter electrode of the first sub-pixel in any of the plurality of pixels and the storage capacitor counter electrode of the second sub-pixel of a pixel adjacent to any of the pixels in the column direction are electrically independent of each other.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

A capacitor structure includes a first conductive layer, a first insulating layer disposed on a substrate in sequence, a second conductive layer disposed on portions of the first insulating layer, a second insulating layer disposed on the second conductive layer and the first insulating layer, a third conductive layer disposed on portions of the second insulating layer, a third insulating layer disposed on the third conductive layer and the second insulating layer, and a fourth conductive layer disposed on the third insulating layer. The third conductive layer and the fourth conductive layer are electrically connected to the first conductive layer and the second conductive layer through at least one first contact hole adjacent to the second conductive layer and at least one second contact hole, respectively.

A discharge transistor (TFT3) which connects the upper end of an organic EL element (EL) and a negative power source (VEE) and a control transistor (TFT4) which connects the upper end of a storage capacitor (SC) with a power source (PVDD) are provided. These transistors (TFT3, TFT4) are turned on by the upper gate line, so that the capacitor of the organic EL element (EL) is discharged prior to the selection of the line for these transistors.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

An electroluminescent (EL) device including an illumination area having one or more primary EL emitters; a reference area having a reference EL emitter; a reference driver circuit for causing the reference EL emitter to emit light while the EL device is active; a sensor for detecting light emitted by the reference EL emitter; and a measurement unit for detecting an aging-related electrical parameter of the reference EL emitter while it is emitting light. The device further includes a controller for receiving an input signal for each primary EL emitter in the illumination area, forming a corrected input signal from each input signal using the detected light and the aging-related electrical parameter, and applying the corrected input signals to the respective primary EL emitters in the illumination area.

To provide a self-luminous device capable of clear, multi-gray scale, color display and an electric machine provided with the same. Gray scale display is attained by a time division driving method in which an EL element (109) provided in a pixel (104) is controlled to emit light or not to emit light by means of time, thereby avoiding being affected by fluctuation in characteristic in current controlling TFTs (108).

To solve the lack of program time, which is a problem of a display device including an EL element, and to provide a display device including a pixel circuit with a high aperture ratio and a driving method thereof. In a circuit including a driving transistor, a capacitor, a display element which can be used as a capacitor, a first power supply line and a second power supply line, potentials of the first power supply line and the second power supply line are set to be almost the same, thereby a threshold voltage of the driving transistor is held in the display element, and after that, a charge is divided into the display element and the capacitor.

In a pixel circuit 10, TFTs 12 and 13 are turned on while a TFT 14 is turned off, and a voltage (VDD+Vx) which depends on a threshold voltage Vth of a driving TFT 11 is read onto a data line Sj. Moreover, switches 21 and 22 in a source driver circuit are turned on, and a voltage Vx is held at a capacitor 26. Next, the TFT 13 is turned off, states of switches 21 to 24 are switched, and a voltage (Vdata+Vx) is applied to the data line Sj. Further, the TFT 12 is turned off while the TFT 14 is turned on. An amount of an electric current flowing through an organic EL element 15 after the turn-on of the TFT 14 is determined from the voltage (Vdata+Vx) of a gate terminal of the driving TFT 11. Thus, it is possible to efficiently utilize an amplitude of a data voltage and compensate variations in threshold voltage of the driving TFT 11 with high accuracy, without increasing a scale of the pixel circuit 10.

An electroluminescent (EL) subpixel, such as an organic light-emitting diode (OLED) subpixel, is compensated for aging effects such as threshold voltage Vth shift, EL voltage Voled shift, and OLED efficiency loss. The drive current of the subpixel is measured at one or more measurement reference gate voltages to form a status signal representing the characteristics of the drive transistor and EL emitter of the subpixel. Current measurements are taken in the linear region of drive transistor operation to improve signal-to-noise ratio in systems such as modern LTPS PMOS OLED displays, which have relatively small Voled shift over their lifetimes and thus relatively small current change due to channel-length modulation. Various sources of noise are also suppressed to further increase signal-to-noise ratio.

A deposition mask and a display unit and method of manufacturing same are provided. A red continuous organic layer, a green continuous organic layer, and a blue continuous organic layer are provided over two or more lines of a matrix configuration of organic light emitting devices in common. A film thickness distribution in the extensional direction of the red, green and blue continuous organic layer is dissolved, and an aperture ratio can be improved by just that much.

A pixel arrangement structure of an OLED display is provided. The pixel arrangement structure includes: a first pixel having a center coinciding with a center of a virtual square; a second pixel separated from the first pixel and having a center at a first vertex of the virtual square; and a third pixel separated from the first pixel and the second pixel, and having a center at a second vertex neighboring the first vertex of the virtual square.

A first semiconductor layer serves as a first implanted layer of a first conductivity type. A second semiconductor layer of a second conductivity type is provided under the first semiconductor layer. The second conductivity type is opposite to the first conductivity type. The second semiconductor layer is buried in an epitaxial layer grown above a substrate. The second semiconductor layer becomes fully depleted when an appropriate bias voltage is applied to the device.

A display device with an integrated touch screen according to an embodiment, includes a display panel including a touch screen provided in an active area of the display panel, and a display driver circuit provided in an inactive area of the display panel, the touch screen including a plurality of driving electrodes, each of the driving electrodes including a plurality of sub driving electrodes positioned in the active area of the display panel but electrically connected to each other in the inactive area of the display panel, the touch screen further including a plurality of sensing electrodes disposed between the sub driving electrodes and formed in the active area of the panel, and the display driver circuit configured to apply a common voltage to the driving electrodes and the sensing electrodes or a touch driving voltage to the driving electrodes according to a driving mode of the display panel.

To provide a display device in which a viewing angle characteristic is improved by providing a plurality of sub-pixels to one pixel. Alternatively, to provide a display device in which an aperture ratio is suppressed even when a plurality of sub-pixels is provided. A pixel including first sub-pixel, a second sub-pixel, and a third sub-pixel, a scanning line, a signal line, a first capacitor wiring, a second capacitor wiring and a third capacitor wiring are provided. Pixel electrodes each electrically connected to one electrode of the first to third capacitor elements, and the first to third capacitor wirings, respectively, are provided to the first to third sub-pixels electrodes, respectively. Potentials of the first capacitor wiring and the second capacitor wiring are changed and a potential of the third capacitor wiring is kept almost constant.

A pixel structure of active matrix organic light emitting display and method for fabricating the same are provided. In the method, a transparent electrode, an organic light emitting diode, and a reflective electrode are formed on a substrate. Subsequently, at least one switching thin film transistor, at least one driving thin film transistor, a scan line, a data line, and a storage capacitor are formed over the substrate.

Disclosed is a display device for use of a surface display of an arbitrary shape, including a plural number of display element units, each made up of a circuit that forms a single stage of a scanning circuit and a pixel circuit connected to an output of the scanning circuit, are arranged in a unicursal fashion on a display substrate.

To provide a liquid crystal display device which can improve viewing angle characteristics and a driving method of the liquid crystal display device, and an electronic device including the liquid crystal display device. In a liquid crystal display device which performs display by aligning liquid crystal molecules at a tilt or radially at a tilt, one pixel is divided into a plurality of regions (sub-pixels) and a signal applied to each sub-pixel is made different every desired period. Alternatively, a signal applied to each sub-pixel is made different with respect to an adjacent pixel. To improve viewing angle characteristics by changing transmittance of the liquid crystal molecules every desired period in addition to improving the viewing angle characteristics of a viewer by making the liquid crystal molecules slanted to increase directions of alignment.