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192444results about "Non-linear optics" patented technology
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Amorphous Oxide And Thin Film Transistor
InactiveUS20070194379A1High ionicityGeneration of oxygen defects is less frequentTransistorVacuum evaporation coatingCharge carrierElectron
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.
Owner:JAPAN SCI & TECH CORP
Semiconductor device and manufacturing method thereof
ActiveUS20070108446A1Low resistance of wireLower resistanceTransistorElectroluminescent light sourcesAlloySilicon oxide
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
Owner:SEMICON ENERGY LAB CO LTD
Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.
Owner:CANON KK
Display
An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
Owner:CANON KK +2
Semiconductor device and method for manufacturing the same, and electric device
InactiveUS20090073325A1Simple stepsHighly integratedTransistorTelevision system detailsElectrical resistance and conductanceLongest Diameter
It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.
Owner:SEMICON ENERGY LAB CO LTD
Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter
A method of forming a crystalline semiconductor thin film on a base material which can be prepared at a low temperature by simple step and device, the method including a processing step of applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25° C. and not more than 300° C. in a vacuum or a reducing gas atmosphere, as well as a substrate having the semiconductor thin film provided on the base material, a substrate for forming a color filter and a color filter using the substrate.
Owner:FUJIFILM BUSINESS INNOVATION CORP
Amorphous oxide and thin film transistor
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.
Owner:JAPAN SCI & TECH CORP
Amorphous oxide and thin film transistor
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.
Owner:JAPAN SCI & TECH CORP +2
Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
A method of manufacturing a transmission type liquid crystal display is disclosed including preparing a color filter; forming a substantially transparent semiconductor circuit on a surface of the color filter while position adjustment between the color filter and the semiconductor circuit is performed; and forming a transmission type liquid crystal display element on one side of the substantially transparent semiconductor circuit, wherein there is no color filter on the one side.
Owner:TOPPAN PRINTING CO LTD
Thin film transistor having oxide semiconductor layer and manufacturing method thereof
ActiveUS20060284172A1Etch resistance of resist is lowPromote meltingSolid-state devicesSemiconductor/solid-state device manufacturingZincSemiconductor
A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.
Owner:SAMSUNG DISPLAY CO LTD
Semiconductor device and manufacturing method thereof
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Owner:SEMICON ENERGY LAB CO LTD
Organic electroluminescent element, illuminator, display and compound
InactiveUS20050069729A1Improve emission efficiencySolution to short lifeMethine/polymethine dyesSolid-state devicesOrganic electroluminescenceBoron
An organic electroluminescent element comprising a light emission layer and a hole blocking layer adjacent to the light emission layer, wherein, (i) the light emission layer contains a compound having a specified partial structure and having a molecular weight of not more than 1700; and (ii) the hole blocking layer contains a derivative selected from the group consisting of a styryl derivative, a boron derivative and a carboline derivative.
Owner:KONICA MINOLTA INC
Tissue biopsy and treatment apparatus and method
InactiveUS6869430B2Improve clinical outcomesPrecise positioningSurgical needlesControlling energy of instrumentSensor arrayTissue biopsy
An embodiment of the invention provides a tissue biopsy and treatment apparatus that comprises an elongated delivery device that is positionable in tissue and includes a lumen. A sensor array having a plurality of resilient members is deployable from the elongated delivery device. At least one of the plurality of resilient members is positionable in the elongated delivery device in a compacted state and deployable with curvature into tissue from the elongated delivery device in a deployed state. At least one of the plurality of resilient members includes at least one of a sensor, a tissue piercing distal end or a lumen. The sensor array has a geometric configuration adapted to volumetrically sample tissue at a tissue site to differentiate or identify tissue at the target tissue site. At least one energy delivery device is coupled to one of the sensor array, at least one of the plurality of resilient members or the elongated delivery device.
Owner:ANGIODYNAMICS INC
Methods for driving bistable electro-optic displays, and apparatus for use therein
InactiveUS7012600B2Character and pattern recognitionCathode-ray tube indicatorsGray levelDisplay device
A bistable electro-optic display has a plurality of pixels, each of which is capable of displaying at least three gray levels. The display is driven by a method comprising: storing a look-up table containing data representing the impulses necessary to convert an initial gray level to a final gray level; storing data representing at least an initial state of each pixel of the display; receiving an input signal representing a desired final state of at least one pixel of the display; and generating an output signal representing the impulse necessary to convert the initial state of said one pixel to the desired final state thereof, as determined from said look-up table. The invention also provides a method for reducing the remnant voltage of an electro-optic display.
Owner:E INK CORPORATION
Semiconductor Device and Manufacturing Method Thereof
Owner:SEMICON ENERGY LAB CO LTD
Electrophoretic medium and process for the production thereof
Owner:E INK CORPORATION
Electrophoretic medium and display with improved image stability
An electrophoretic medium comprises a plurality of particles suspended in a suspending fluid, the particles being capable of moving through the fluid upon application of an electric field to the medium, the fluid having dissolved or dispersed therein a polymer having a number average molecular weight in excess of about 20,000, the polymer being essentially non-absorbing on the particles. The polymer improves the bistability of the display (i.e., the period for which a written image persist without the display being refreshed) but does not greatly increase the viscosity of the suspending fluid, thus keeping the switching time of the display within reasonable limits. The medium may be encapsulated, or may be in the form a polymer-dispersed electrophoretic medium.
Owner:E INK CORPORATION
Semiconductor Device and Manufacturing Method Thereof
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Owner:SEMICON ENERGY LAB CO LTD
Electro-optic displays, and methods for driving same
InactiveUS6950220B2Reduce and eliminate exposureReducing and eliminating light degradationNon-linear opticsElectricityTransport layer
The invention relates to electro-optic displays and methods for driving such displays. The invention provides (i) electrochromic displays with solid charge transport layers; (ii) apparatus and methods for improving the contrast and reducing the cost of electrochromic displays; (iii) apparatus and methods for sealing electrochromic displays from the outside environment and preventing ingress of contaminants into such a display; and (iv) methods for adjusting the driving of electro-optic displays to allow for environmental and operating parameters.
Owner:E INK CORPORATION
Full color reflective display with multichromatic sub-pixels
InactiveUS7075502B1Less power consumptionMore saturedStatic indicating devicesSolid-state devicesElectricityComputer graphics (images)
A full color, reflective display having superior saturation and brightness is achieved with a novel display element comprising multichromatic elements. In one embodiment a capsule includes more than three species of particles which differ visually. One embodiment of the display employs three sub-pixels, each sub-pixel comprising a capsule including three species of particles which differ visually. Another embodiment of the display employs color filters to provide different visual states to the user. The display element presents a visual display in response to the application of an electrical signal to at least one of the capsules.
Owner:E INK CORPORATION
Ultraviolet laser apparatus and exposure apparatus using same
InactiveUS7023610B2Easy to getReduce spatial coherenceLaser using scattering effectsLaser arrangementsFiberUltraviolet lights
An ultraviolet laser apparatus having a single-wavelength oscillating laser generating laser light between an infrared band and a visible band, an optical amplifier for amplifying the laser light, and a wavelength converting portion converting the amplified laser light into ultraviolet light using a non-linear optical crystal. An exposure apparatus transfers a pattern image of a mask onto a substrate and includes a light source having a laser apparatus emitting laser light having a single wavelength, a first fiber optical amplifier for amplifying the laser light, a light dividing device for dividing or branching the amplified laser light into plural lights, and second fiber optical amplifiers for amplifying the plural divided or branched lights, respectively, and a transmission optical system for transmitting the laser light emitted from the light source to the exposure apparatus.
Owner:NIKON CORP
Methods for producing droplets for use in capsule-based electrophoretic displays
Methods are provided for forming a dispersion of substantially uniform droplets. An internal phase that includes a plurality of particles suspended in a first fluid is provided and an external phase including a second fluid is provided. The internal phase is vibrated and the internal phase is applied to the external phase. Either the internal phase or a combination of the internal and external phases form a series of droplets or complex droplets of substantially uniform size.
Owner:E INK CORPORATION
Flexible electro-optic displays
Owner:E INK CORPORATION
Semiconductor Device and Manufacturing Method Thereof
Owner:SEMICON ENERGY LAB CO LTD
Display
Owner:CANON KK +2
Electro-optic mirror cell
ActiveUS7255451B2Limit and substantially precludes touching and harmingSimple preparation processMirrorsThin material handlingElectricityConductive coating
A reflective element assembly for a variable reflectance vehicular mirror includes a front substrate having a transparent conductive coating disposed on a second surface, and a rear substrate having a third surface conductive coating disposed on its third surface and preferably, a fourth surface conductive coating disposed on its fourth surface. At least a portion of the third surface conductive coating may wrap around an edge portion of the rear substrate and at least a portion of the fourth surface conductive coating may wrap around at least a second portion of the perimeter edge so as to establish electrical continuity between the fourth surface conductive coating on the fourth surface and the third surface conductive coating on the third surface. The rear substrate may have a smaller dimension than the front substrate so as to provide an overhang region, preferably at the wraparound region.
Owner:DONNELLY CORP
Full color reflective display with multichromatic sub-pixels
InactiveUS6864875B2Less power consumptionIncrease flexibilityStatic indicating devicesSolid-state devicesElectricityComputer graphics (images)
A full color, reflective display having superior saturation and brightness is achieved with a novel display element comprising multichromatic elements. In one embodiment a capsule includes more than three species of particles which differ visually. One embodiment of the display employs three sub-pixels, each sub-pixel comprising a capsule including three species of particles which differ visually. Another embodiment of the display employs color filters to provide different visual states to the user. The display element presents a visual display in response to the application of an electrical signal to at least one of the capsules.
Owner:E INK CORPORATION
Semiconductor Device and Manufacturing Method Thereof
ActiveUS20080308797A1High yieldReduce the ratioTransistorDischarge tube luminescnet screensEngineeringZinc
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Owner:SEMICON ENERGY LAB CO LTD
Display apparatus
ActiveUS8811017B2Effective diffusionTelevision system detailsElectric discharge tubesEngineeringClose contact
Provided is a display apparatus including a display panel for displaying an image, a heat source arranged at a side surface of at least one side of the display panel, a heat absorbing section for absorbing heat generated by the heat source, a back surface plate arranged at a back surface side of the display panel and made of a metal, a portion of the back surface plate being in close contact with the heat absorbing section, a front surface plate arranged at a front surface side of the display panel and made of a metal, and a middle chassis arranged between the front surface plate and the heat absorbing section.
Owner:SATURN LICENSING LLC
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