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19576 results about "Oxide semiconductor" patented technology
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Oxide Semiconductors. Amorphous oxide semiconductors (AOSs) have been considered as one of the most promising materials for implementation of next-generation electronic devices that are flexible, transparent, and large-area applicable due to their novel properties.
Oxide semiconductor thin film transistor and method of manufacturing the same
InactiveUS20070052025A1Improve reliabilityUnstability of may lessenSolid-state devicesSemiconductor/solid-state device manufacturingEngineeringSemiconductor
Provided is a thin film transistor comprising a channel layer comprised of an oxide semiconductor containing In, M, Zn, and O, M including at least one selected from the group consisting of Ga, Al, and Fe. The channel layer is covered with a protective film.
Owner:CANON KK
Thin-film device and method of fabricating the same
ActiveUS20080038882A1Low densityGood reproducibilitySemiconductor/solid-state device manufacturingSemiconductor devicesOxide semiconductorOxide
A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
Owner:NEC LCD TECH CORP
Transparent oxide semiconductor thin film transistors
This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.
Owner:SAMSUNG DISPLAY CO LTD
Field-effect transistor and method for manufacturing the same
InactiveUS7411209B2Solid-state devicesSemiconductor/solid-state device manufacturingHydrogenField-effect transistor
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
Owner:CANON KK
Thin film transistor, method of manufacturing the same, and flat panel display having the same
ActiveUS20080258141A1Improve stabilityUniform characteristicsSolid-state devicesSemiconductor/solid-state device manufacturingDisplay deviceEngineering
A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.
Owner:SAMSUNG ELECTRONICS CO LTD
Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
ActiveUS20080258140A1Stable contact characteristicHigh carrier mobilitySemiconductor/solid-state device manufacturingSemiconductor devicesEngineeringIon implantation
Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
InactiveUS20070187678A1Improve heat resistanceImprove propertiesSemiconductor/solid-state device manufacturingSemiconductor devicesZincActive layer
A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.
Owner:KOICHI IND PROMOTION CENT +1
Method of fabricating oxide semiconductor device
InactiveUS20070054507A1Efficient solutionReduce conductivitySemiconductor/solid-state device manufacturingSemiconductor devicesSemiconductorMaterials science
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
Owner:CANON KK
Method of dry etching oxide semiconductor film
InactiveUS20080038929A1Improve processing accuracyIncrease etch rateDecorative surface effectsSemiconductor/solid-state device manufacturingSemiconductorDry etching
Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.
Owner:CANON KK
High-electron mobility transistor with zinc oxide
InactiveUS7105868B2Increase heightHigh electron mobilitySemiconductor/solid-state device manufacturingSemiconductor devicesSchottky barrierField-effect transistor
A zinc oxide (ZnO) field effect transistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings. The channel layer is formed from n-type ZnO. The gate insulating layer is made from aluminum nitride / aluminum gallium nitride (AlN / AlGaN) or magnesium zinc oxide (MgZnO), which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a silicon metal oxide semiconductor field effect transistor (Si-MOS-type FET), resulting in the formation of an inversion layer.
Owner:NAUSE CATHERINE D
Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
ActiveUS7453087B2High light transmittanceHigh transparencyTransistorSemiconductor/solid-state device manufacturingThin-film diodeRefractive index
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
Owner:CANON KK
Structure with transistor
ActiveUS20080258139A1Improve mobilityOn/off ratio highSemiconductor/solid-state device manufacturingSemiconductor devicesLiquid-crystal displayDisplay device
A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.
Owner:TOPPAN PRINTING CO LTD
Thin film transistor having oxide semiconductor layer and manufacturing method thereof
ActiveUS20060284172A1Etch resistance of resist is lowPromote meltingSolid-state devicesSemiconductor/solid-state device manufacturingZincSemiconductor
A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.
Owner:SAMSUNG DISPLAY CO LTD
Dry etching method for oxide semiconductor film
InactiveUS20070287296A1Improve processing accuracyIncrease etch rateDecorative surface effectsSemiconductor/solid-state device manufacturingDry etchingSemiconductor
Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.
Owner:CANON KK
Semiconductor device and manufacturing method thereof
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor Device and Manufacturing Method Thereof
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor Device and Manufacturing Method Thereof
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor Device and Manufacturing Method Thereof
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor Device and Manufacturing Method Thereof
ActiveUS20080308797A1High yieldReduce the ratioTransistorDischarge tube luminescnet screensEngineeringZinc
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100025678A1Comparatively-easy manufacturing processRun at high speedTransistorSolid-state devicesProduction rateOhmic contact
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor Device and Manufacturing Method Thereof
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Owner:MOLECULAR DEVICES
Thin film transistor, method of manufacturing the same and flat panel display device having the same
ActiveUS8148779B2Improve featuresAvoid chargingSolid-state devicesSemiconductor/solid-state device manufacturingTrappingEngineering
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
Owner:SAMSUNG DISPLAY CO LTD
Thin film field effect transistor and display
ActiveUS8188480B2High concentrationElectroluminescent light sourcesSolid-state devicesDisplay deviceField-effect transistor
A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode and a drain electrode, wherein a resistance layer containing an amorphous oxide and having a thickness of more than 3 nm is disposed between the active layer and at least one of the source electrode or the drain electrode, and a band gap of the active layer is smaller than a band gap of the resistance layer. Also, a display using the TFT is provided.
Owner:SAMSUNG DISPLAY CO LTD
Thin film transistor, method of manufacturing the same and flat panel display device having the same
ActiveUS7994500B2Improve featuresAvoid chargingSemiconductor/solid-state device detailsSolid-state devicesTrappingOxide thin-film transistor
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
Owner:SAMSUNG DISPLAY CO LTD
Semiconductor device
ActiveUS20110101351A1Reduce power consumptionFrequency of refresh can be lowSolid-state devicesRead-only memoriesSemiconductor materialsData storing
Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100051949A1Small currentHigh on-off ratioTransistorStatic indicating devicesMetallic materialsOxygen deficient
A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.
Owner:SEMICON ENERGY LAB CO LTD
Thin-film transistor, method of producing the same, and devices provided with the same
ActiveUS20110140100A1Low mobilityIncrease carrier densityTransistorSemiconductor/solid-state device manufacturingOxygenSemiconductor
A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.
Owner:SAMSUNG DISPLAY CO LTD
Thin film transistor, display device, including the same, and associated methods
InactiveUS8058645B2Excellent electrical propertiesMinimize damageSolid-state devicesSemiconductor/solid-state device manufacturingIndiumDisplay device
A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
Owner:SAMSUNG DISPLAY CO LTD
Oxide semiconductor film and semiconductor device
ActiveUS20120138922A1Improve conductivityMore electrically stableElectroluminescent light sourcesSemiconductor devicesUltraviolet lightsIrradiation
An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
Owner:SEMICON ENERGY LAB CO LTD
Thin film transistor, display device, and electronic device
ActiveUS20120119205A1Maintain good propertiesLarge carrier mobilityTransistorSemiconductor/solid-state device manufacturingValence bandMaximum level
A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.
Owner:JOLED INC
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