70results about How to "Increase carrier density" patented technology

A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.

The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF₆, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

A new method is provided for the creation of sub-micron gate electrode structures. A high-k dielectric is used for the gate dielectric, providing increased inversion carrier density without having to resort to aggressive scaling of the thickness of the gate dielectric while at the same time preventing excessive gate leakage current from occurring. Further, air-gap spacers are formed over a stacked gate structure. The gate structure consists of pre-doped polysilicon of polysilicon-germanium, thus maintaining superior control over channel inversion carriers. The vertical field between the gate structure and the channel region of the gate is maximized by the high-k gate dielectric, capacitive coupling between the source/drain regions of the structure and the gate electrode is minimized by the gate spacers that contain an air gap.

One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10¹⁶ atoms/cm³, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H₂O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

Provided is a strongly correlated oxide field effect element demonstrating a phase transition and a switching function induced by electrical means. The strongly correlated oxide field effect element is a strongly correlated oxide field effect element 100 including a channel layer 2 constituted by a strongly correlated oxide film, a gate electrode 14, a gate insulating layer 31, a source electrode 42, and a drain electrode 43. The channel layer 2 includes an insulator-metal transition layer 22 of a strongly correlated oxide and a metallic state layer 21 of a strongly correlated oxide that are stacked on each other. The thickness t of the channel layer 2, the thickness t1 of the insulator-metal transition layer 22, and the thickness t2 of the metallic state layer 21 satisfy the following relationship with critical thicknesses t1c and t2c for respective metallic phases of the layers: t=t1+t2≧t1c>t2c, where t1<t1c and t2<t2c.

A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.

An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited.

A deposition technique for forming an oxynitride film is provided. A highly reliable semiconductor element is manufactured with the use of the oxynitride film. The oxynitride film is formed with the use of a sputtering target including an oxynitride containing indium, gallium, and zinc, which is obtained by sintering a mixture of at least one of indium nitride, gallium nitride, and zinc nitride as a raw material and at least one of indium oxide, gallium oxide, and zinc oxide in a nitrogen atmosphere. In this manner, the oxynitride film can contain nitrogen at a necessary concentration. The oxynitride film can be used for a gate, a source electrode, a drain electrode, or the like of a transistor.

The invention discloses a reconfigurable antenna based on a graphene coating. The reconfigurable antenna comprises an antenna body which comprises a ground plate and a monopole erected on the ground plate. The antenna body further comprises a dielectric sleeve which is thoroughly through and shaped like a hollow cylinder. The dielectric sleeve is positioned on the group plate and at the outer periphery of the monopole. One of inner and outer side surfaces of the dielectric sleeve is coated with a grapheme coating, and the other is coated with a silicon coating. Each of the graphene coating and the silicon coating is connected with one end of external offset voltage, and a certain gap is reserved between the graphene coating or the silicon coating connected with the anode of the external offset voltage and the ground plate. The external offset voltage is controlled by dividing the graphene coating and the silicon coating into multiple blocks, so that the antenna is enabled to have characteristics of wide band, reconfigurable frequency and/or reconfigurable radiation pattern.

The invention discloses a low-roll-off quasi-two-dimensional perovskite light-emitting diode and a preparation method thereof. The low-roll-off quasi-two-dimensional perovskite light-emitting diode issequentially provided with a cathode, a hole transport layer, a hole transport layer and light-emitting layer interface modification layer, a perovskite light-emitting layer, a light-emitting layer and electron transport interface modification layer, an electron transport layer, an electron injection layer and an anode from bottom to top. By modifying the interface of the hole transport layer andthe perovskite light-emitting layer, the hole injection barrier between the hole layer and the light-emitting layer is reduced, the hole injection efficiency is improved, the hole layer can be prevented from quenching the perovskite layer, and the light-emitting efficiency of the perovskite layer is improved. The interface of the perovskite light-emitting layer and the electron transport layer isalso modified, so that the defect state of the perovskite surface can be passivated, the film quality of the light-emitting layer is improved, non-radiative recombination is inhibited, and the light-emitting efficiency of the device is further improved.

The invention relates to the field of nanomaterial synthesis, and discloses a preparation method for ultrafine high-purity antimony-doped tin oxide nanopowder, which comprises the following steps: taking tin particles or tin-containing compounds, antimony-containing compounds, adding strong acid, and then adding oxidizing agent and deionization Water or ultrapure water is then transferred to a closed reaction kettle, reacted at 120°C-200°C for 1-24h, cooled to room temperature, centrifuged and washed until neutral, dried, and ground to obtain antimony-doped tin dioxide nanoparticle powder. No anion impurity is introduced in the preparation process of the present invention, which ensures high purity of the prepared nanoparticles. The invention is easy to dope accurately and according to the amount, and solves the technical problems in the prior art that the doping is uneven, the particles contain anion impurities, and the particles are easy to agglomerate; the nano particles synthesized by the invention have high purity, small particle size and are easy to disperse. The coated glass prepared by the nano particles of the invention has high visible light transmittance, has the function of blocking infrared rays, and has low resistance, and can be applied to low-radiation glass and transparent conductive glass.

In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.