781results about How to "Reduce the presence of impurities" patented technology

A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

A thermally-conductive, electrically insulative interface for conductively cooling a heat-generating source, such as an electronic component, having an associated thermal dissipation member such as a heat sink. The interface is provided as a cured sheet of a curable material formulated as a blend of a curable silicone binder, and a particulate alumina, i.e., aluminum oxide (Al2O3), filler. The interface is observed to exhibit a thermal conductivity of at least about 0.8 W / m-K and a wet dielectric breakdown strength of at least about 475 Vac / mil.

A method of forming a high dielectric constant (high-k) dielectric layer by atomic layer deposition includes the following steps. Cycles are performed one after another, and each of the cycles sequentially includes performing a first oxygen precursor pulse to supply an oxygen precursor to a substrate disposed in a reactor; performing a first oxygen precursor purge after the first oxygen precursor pulse; performing a chemical precursor pulse to supply a chemical precursor to the substrate after the first oxygen precursor purge; and performing a chemical precursor purge after the chemical precursor pulse. The first oxygen precursor pulse, the first oxygen precursor purge, the chemical precursor pulse, and the chemical precursor purge are repeated by at least 3 cycles. A second oxygen precursor pulse is performed to supply an oxygen precursor to the substrate after the cycles. A second oxygen precursor purge is performed after the second oxygen precursor pulse.

An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.

A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

The invention is directed to polyester processes that utilizes a pipe reactor in the esterification, polycondensation, or both esterification and polycondensation processes. Pipe reactor processes of the present invention have a multitude of advantages over prior art processes including improved heat transfer, volume control, agitation and disengagement functions. The pipe reactor processes and apparatus of the present invention are built and operated at a much lower cost than conventional polyester processes.

A method for fabricating MOS-FET using a SOI substrate includes a process of ion implantation of an impurity into a channel region in a SOI layer; and a process of channel-annealing in a non-oxidized atmosphere. In the ion implantation process, a concentration peak of the impurity is made to exist in the SOI layer. Moreover in the channel-annealing process, the impurity is distributed with a high concentration in the vicinity of the surface of the SOI layer under the following condition with the anneal temperature as T (K) and annealing time as t (minutes): 506×1000 / T−490<t<400×1000 / T−386.

A method for making a heterojunction photovoltaic device (200) is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The method and apparatus include an improved window layer (230) having an increased oxygen (140) concentration with higher optical bandgap and photo to dark conductivity ratio. The improved photovoltaic device (200) is made using a deposition method which incorporates the use of a gas mixture of an inert gas (115) and a predetermined amount of oxygen (140), deposited at or near room temperature. Window layers contemplated by the present invention include, but are not limited to, cadmium sulfide (CdS) and various alloys of zinc cadmium sulfide (ZnxCd1-xS). To further increase the efficiency of the resultant photovoltaic device (200), deposition parameters are controlled and monitored to improve the deposited window layer (230).

Dry process based energy storage device structures and methods for using a dry adhesive therein are disclosed.

To further ensure the electrical connection of a conductor between an opposite electrode of an opposite substrate and a connection wiring of a TFT substrate, and to prevent diffusion of impurities contained in a sealing material mixed with conductive particles or a conductive paste into a liquid crystal layer. In order to isolate the sealing material containing a conductive particle or the conductive paste from the liquid crystal layer, the shape of top surface of the sealing material is a shape in which a plurality of circular shapes are combined, which is a shape having no opening. Further, the sealing material forms a plurality of compartments such that a compartment in which a pixel region is provided and a compartment in which a conductor is provided are blocked out.

The present invention is directed to provide a tungsten-based sintered body having a relative density of 99.5% or more (a porosity of 0.5 volume % or less) and a uniform and isotropic structure, which has not been able to be achieved by conventional techniques. In particular, the tungsten-based sintered body is intended for use as a discharge lamp electrode, a sputtering target, a crucible, a radiation shielding member or a resistance welding electrode. The intended tungsten-based sintered body is produced by subjecting a tungsten-based powder to a CIP process at a pressure of 350 MPa or more to form a powder compact, sintering the powder compact in a hydrogen gas atmosphere at a sintering temperature of 1600° C. or more for a holding time of 5 hours or more to form a sintered compact, and subjecting the sintered compact to a HIP process in an argon gas atmosphere under conditions of 150 MPa or more and 1900° C. or more. The tungsten-based sintered body of the present invention is suitably used, for example, as a discharge lamp electrode, a sputtering target, a crucible, a radiation shielding member, an electric discharge machining electrode, a semiconductor element mounting substrate and a structural member.

A process for producing a purified carboxylic acid having “n+1” carbon atoms comprises feeding a carboxylic acid stream containing a carboxylic acid having “n+1” carbon atoms, a hydrogen halide, a lower boiling point (bp) component, a higher bp component, and others to a first distillation column; separating a lower bp fraction containing part of the lower bp component and a higher bp fraction containing part of the higher bp component in the first column; withdrawing a side stream containing at least the carboxylic acid by side cut from the first column; feeding the side stream to a second distillation column; separating a lower bp fraction containing part of the lower bp component and a higher bp fraction containing part of the higher bp component in the second column; and withdrawing a side stream containing the carboxylic acid by side cut from the second column to recover a purified carboxylic acid; and the process further comprises feeding at least one first component (A) selected from the group consisting of an alcohol, corresponding to the carboxylic acid, having “n” carbon atom(s), and an ester of the alcohol with the carboxylic acid to the first column, and if necessary water. Such a process ensures reduction of the concentration of the hydrogen halide in the purified carboxylic acid.

A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are provided between the single quantum well aluminum gallium nitride active region and carrier confinement layers. The undoped spacer layers reduce the threshold current for the laser device and improve the output characteristics.

An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.

A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are provided between the single quantum well aluminum gallium nitride active region and carrier confinement layers. The undoped spacer layers reduce the threshold current for the laser device and improve the output characteristics.

The present invention describes a method for the purification of waters containing high levels of contaminants by sequentially intermixing with the contaminated water a first anionic polymer, a cationic polymer, and a second anionic polymer, and then separating the contaminants from the water.

A filter sheet is provided which comprises a self-supporting fibrous matrix having immobilized therein particulate filter aid and particulate ion exchange resin, wherein said particulate filter aid and particulate ion exchange resin are distributed substantially uniformly throughout a cross-section of said matrix. A process for removing ionic impurities from a photoresist solution is also provided which comprises passing the photoresist solution through said filter sheet to remove ionic impurities therefrom.

A chromatography stand for supporting a chromatographic column in use for chromatographic analysis has a first and a second platen adapted to receive and hold the chromatographic column therebetween. The first and second platens are mounted on a frame in generally opposed relation for relative movement toward and away from each other. At least one of the first and second platens is constructed for plug-in connection to the chromatographic column such that the column is positively located relative to the platens and placed in fluid connection through said at least one platen. In one embodiment, the cartridges can be stacked between the platens. The cartridges can be quickly and efficiently pre-loaded with sample.

A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and / or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

The invention discloses micro-alloying seamless pipeline steel and process for preparation. According to weight percentage, the range of the chemical components of the invention includes that C holds 0.08% to 0.20%, Si is equal to or less than 0.04%, Mn takes 0.60% to 1. 50%, S is equal to or less than 0.015%, P is equal to or less than 0.025%, Al is equal to or less than 0.04%, Ti is equal to or less than 0.04%, H is equal to or less than 2.5*10-4%, O is equal to or less than 25*10-4%, the rest is Fe and unavoidable foreign matters. The process for preparation comprises technique steps, including smelting, refining, continuous casting, hot rolling and slow cooling. Round steel with the size of phi 70 to 150 millimeters can be produced by the process for preparation. The seamless pipeline steel of the invention has perfect anti-sulphide stress corrosion (SSC resistance) capability and anti-HIC property. The pipeline steel which can substitute for welding pipe can be utilized in the filed of oil pipeline and the like, and the invention increases the reliability of material and adaptability of variety, in particular being adaptable for the low submarine temperature and corrosion-resistant environment and for manufacture of thick-walled tubes.

This invention discloses a soft joint of a cross-linked polythene cable including an inner semiconductive layer and metal jacket sleeves, in which, two core leads between two cables are welded to form a core connection part, the inner semiconductive layer is combined with a preserved section of the inner screen layer of the cable characterizing in setting a polythene filled vulcanized insulation layer out of the inner semiconductive layer to be fused with the polythene insulation layer of the cable, and wrapping the polythene insulation of the cable with a transition connection section and an outer semiconductive layer combining with the preserved section of the outer screen of the cable is set out of the polythene filled vulcanized insulation layer, two ends of the metal jacket sleeve are welded with the out surfaces of lead protection pipe of the cable and set with slope connection sections.

This invention relates to a method for the production of graphene oxide and its use in various applications. The invention provides a method for the preparation of graphene oxide which involves treating a mixture of graphene oxide and impurities with a solution of a base. The impurities in the graphene oxide include oxygen-containing species that are associated with it i.e. bound to the graphene oxide but which are not covalently bonded to the graphene. The graphene oxide of the present invention has improved purity relative to the poorly characterised graphene oxide that is produced by existing methods.

An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.

A method is disclosed for hydroprocessing a heavy hydrocarbon oil, comprising a first hydroprocessing step of bringing a heavy hydrocarbon oil into contact with a Catalyst (1) with a certain specific surface area and pore size distribution in the presence of hydrogen in a first reaction zone containing the Catalyst (1), and a second hydroprocessing step of bringing the hydroprocessed oil obtained from the first reaction zone into contact with a Catalyst (2) with a certain specific surface area and pore size distribution in the presence of hydrogen in a second reaction zone containing the Catalyst (2). The method is an improvement in decreasing or inhibiting the sediment formation, while highly hydroprocessing a heavy hydrocarbon oil containing a large amount of impurities such as sulfur, micro carbon residue (MCR), metals, nitrogen and asphaltene, especially a heavy oil containing a large amount of heavy vacuum residue, to adequately remove the impurities.

Improved integrated processes for the production of alkyl aromatic compounds are disclosed wherein aromatic compounds which may be treated for removal of deleterious substances are reacted with olefin compounds, which may also be treated for contaminant removal, in the presence of acidic zeolite catalyst(s) to produce the desired alkyl aromatic compound(s). The aromatic and preferably also the olefin feeds are treated substantially to remove contaminants, particularly the nitrogen compounds contained therein, before they are brought together for reaction in the presence of the zeolite catalyst(s). In accordance with the present invention, it has been found that feed pretreatment for removal of nitrogen compounds significantly improves the run length and life of the acidic zeolite catalyst(s). The feed pretreatment of this invention may include the steps of distillation, extraction, and / or adsorption by solid adsorbent, which may be regenerated in accordance with further embodiments of this invention.

A process for producing an ethylbenzene product having a purity of at least 99.50 percent based on the weight of ethylbenzene present in the product by the ethylation of the benzene present in non-extracted feed, e.g., non-extracted hydrocarbon composition. The non-extracted feed is substantially free of both C4− hydrocarbons and the C7+ aromatic hydrocarbons and contains benzene and benzene coboilers. The process is carried out in the liquid phase, in the presence of an acid-active catalyst containing MCM-22 family molecular sieve, and under specified conditions.

The present invention relates to the use of isomerization inhibitors in olefin metathesis reactions. The inhibitors are low molecular weight organic acids such as formic acid, acetic acid, benzoic acid, and the like.