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11122 results about "Chemical vapor deposition" patented technology
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Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
METHOD OF FABRICATING ZnO FILM AND THIN FILM TRANSISTOR ADOPTING THE ZnO FILM
InactiveUS20070172591A1Liquid surface applicatorsChemical vapor deposition coatingChemical vapor depositionMetal
Provided is a method of fabricating a low temperature ZnO polycrystalline film and a thin film transistor (TFT) adopting the low temperature ZnO polycrystalline film. The method includes growing ZnO on a substrate at a first temperature for a first time using Metal Organic Chemical Vapor Deposition (MOCVD) to form a ZnO buffer layer, and heating the substrate at a temperature lower than the first temperature to grow ZnO on the ZnO buffer layer for a second time longer than the first time so as to form a ZnO film.
Owner:SAMSUNG ELECTRONICS CO LTD +1
High rate deposition at low pressures in a small batch reactor
InactiveUS20030049372A1Increase ratingsRapid and uniform deposition of materialElectric discharge tubesSemiconductor/solid-state device manufacturingHigh rateSusceptor
A chemical vapor deposition reactor including a wafer boat with a vertical stack of horizontally oriented susceptors serving as thermal plates and each having pins extending upward for suspending a wafer between a pair of susceptors. Reactant gas injector and exhaust apparatus are positioned to concentrate a forceful supply of reactant gas across each wafer at a speed in excess of 10 cm / sec. The pressure is held in the range of 0.1 to 5,000 mTorr. The forceful gas flow avoids gas depletion effects, thinning the boundary layer and resulting in faster delivery of reactants to substrate surfaces, resulting in surface rate reaction limited operation. A plurality of individually controllable heaters are spaced vertically around the sides of the boat. Temperature sensors monitor the temperature along the boat height and provide input to a controller for adjusting the heater drive to optimize the temperature uniformity.
Owner:APPLIED MATERIALS INC
Methods, systems, and apparatus for atomic-layer deposition of aluminum oxides in integrated circuits
InactiveUS20030207032A1Small volumeConsumes less gasPretreated surfacesChemical vapor deposition coatingProduct gasIntegrated circuit layout
Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common layer-formation technique, known as chemical-vapor deposition (CVD), produces uneven layers and covers vertical surfaces poorly. An emergent technique, atomic-layer deposition, overcomes these shortcomings, but has others, such as slow deposition rates and longer than desirable cycle times, particularly as applied to deposition of aluminum oxide. Accordingly, the inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary system includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.
Owner:MICRON TECH INC
Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof
ActiveUS20060263522A1Unwanted chemical reactionFrom chemically reactive gasesChemical vapor deposition coatingSource materialGas phase
Owner:KOREA INST OF IND TECH +1
Method of eliminating a lithography operation
ActiveUS20090146322A1Semiconductor/solid-state device detailsSolid-state devicesLithographic artistEngineering
Methods of semiconductor device fabrication are disclosed. An exemplary method includes processes of depositing a first pattern on a semiconductor substrate, wherein the first pattern defines wide and narrow spaces; depositing spacer material over the first pattern on the substrate; etching the spacer material such that the spacer material is removed from horizontal surfaces of the substrate and the first pattern but remains adjacent to vertical surfaces of a wide space defined by the first pattern and remains within narrow a space defined by the first pattern; and removing the first pattern from the substrate. In one embodiment, the first pattern can comprise sacrificial material, which can include, for example, polysilicon material. The deposition can comprise physical vapor deposition, chemical vapor deposition, electrochemical deposition, molecular beam epitaxy, atomic layer deposition or other deposition techniques. According to another embodiment, features for lines and logic device components having a width greater than that of the lines are formed in the spacer material in the same mask layer.
Owner:CADENCE DESIGN SYST INC
Chemical vapor deposition apparatus
InactiveUS7749326B2Semiconductor/solid-state device manufacturingChemical vapor deposition coatingSusceptorChemical vapor deposition
Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.
Owner:SAMSUNG ELECTRONICS CO LTD
Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
ActiveUS20070281496A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingGas phaseSilicon oxide
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
Owner:APPLIED MATERIALS INC
Method for depositing thin films by mixed pulsed CVD and ald
ActiveUS20080317972A1Easy to customizeImprove responseSemiconductor/solid-state device manufacturingChemical vapor deposition coatingChemical vapor depositionAtomic layer deposition
Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.
Owner:ASM INTERNATIONAL
Geartrain coupling for a turbofan engine
Molybdenum disulfide (MoS2) is used as a journal coating for a gearing system. A particular application is the planetary gear system of a geared turbofan engine. Particularly advantageous coatings are deposited via physical vapor deposition (PVD) techniques.
Owner:RAYTHEON TECH CORP
Method of depositing silicon oxide films
InactiveUS20090041952A1Semiconductor/solid-state device detailsSemiconductor/solid-state device manufacturingOxygen plasmaGas phase
Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.
Owner:ASM KOREA LTD
Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
InactiveUS20060193979A1Improve propertiesDesired morphologyGroup 4/14 organic compounds without C-metal linkagesPretreated surfacesHafniumChemical vapor deposition
This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.
Owner:PRAXAIR TECH INC
Metal organic chemical vapor deposition equipment
InactiveUS20080006208A1Uniform film thicknessImprove formation efficiencyAfter-treatment apparatusFrom chemically reactive gasesSusceptorProduct gas
Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.
Owner:SUMITOMO ELECTRIC IND LTD
Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device
This invention discloses a two-layer gas inlet blow head of a metal organic chemical gas phase deposit device including a closed shell having an upper gas inlet cavity and a lower gas inlet cavity, an upper escape pipe communicating with the upper gas cavity and reaction chamber is set between the upper-middle and the base plate and a lower escape pipe communicating with a lower gas inlet cavity and the reaction chamber is set between the lower plate and base plate characterizing that diameter of the lower escape pipe is layer than the upper and the upper is put in the lower. A cooling cavity is designed, the first reaction gas enters into the reaction chamber at the substrate surface from the upper and lower escape pipes separately.
Owner:南昌硅基半导体科技有限公司
Yttria-based material coated chemical vapor deposition chamber heater
ActiveUS20140263272A1Improve wear resistanceImprove flexural strengthLiquid surface applicatorsMolten spray coatingYTTERBIUM OXIDEFlexural strength
Embodiments of the present invention generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from yttrium oxide at a molar concentration ranging from about 50 mole percent to about 75 mole percent; zirconium oxide at a molar concentration ranging from about 10 mole percent to about 30 mole percent; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole percent to about 30 mole percent. The alloying of yttrium oxide with a compatible oxide improves wear resistance, flexural strength, and fracture toughness of the protective coating, relative to pure yttrium oxide.
Owner:APPLIED MATERIALS INC
Method of cleaning a chemical vapor deposition chamber
InactiveUS20040013818A1Reduce the amount requiredIncrease resistanceHollow article cleaningElectrostatic cleaningHydrogenNitrogen
After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and / or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted and removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.
Owner:SAMSUNG ELECTRONICS CO LTD
Method for Growing a Monocrystalline Tin-Containing Semiconductor Material
InactiveUS20140020619A1Efficiently provideEfficient methodPolycrystalline material growthAdditive manufacturing apparatusSemiconductor materialsPhysical chemistry
Disclosed are methods for growing Sn-containing semiconductor materials. In some embodiments, an example method includes providing a substrate in a chemical vapor deposition (CVD) reactor, and providing a semiconductor material precursor, a Sn precursor, and a carrier gas in the CVD reactor. The method further includes epitaxially growing a Sn-containing semiconductor material on the substrate, where the Sn precursor comprises tin tetrachloride (SnCl4). The semiconductor material precursor may be, for example, digermane, trigermane, higher-order germanium precursors, or a combination thereof. Alternatively, the semiconductor material precursor may be a silicon precursor.
Owner:INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW) +1
Method for silicon based dielectric chemical vapor deposition
InactiveUS20060286818A1TransistorSemiconductor/solid-state device manufacturingDielectricCelsius Degree
Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
Owner:APPLIED MATERIALS INC
In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
InactiveUS7816278B2Rapid temperature measurementIncrease deposition rateSemiconductor/solid-state device manufacturingChemical vapor deposition coatingDielectricBatch processing
An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.
Owner:TOKYO ELECTRON LTD
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
ActiveUS20050214992A1Semiconductor/solid-state device manufacturingSemiconductor devicesGas phaseNear ultraviolet
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN / GaN violet and near-ultraviolet light emitting diodes and laser diodes.
Owner:JAPAN SCI & TECH CORP
Massively parallel atomic layer deposition/chemical vapor deposition system
InactiveUS20050274323A1Improve generally axi-symmetric gas flowMinimizing vertical heightChemical vapor deposition coatingMassively parallelGas phase
A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.
Owner:AIXTRON INC
Flowable silicon-carbon-nitrogen layers for semiconductor processing
InactiveUS20130217240A1Reduce in quantityIncrease the number ofSemiconductor/solid-state device manufacturingChemical vapor deposition coatingChemical vapor depositionDielectric layer
Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.
Owner:APPLIED MATERIALS INC
Method and system for performing different deposition processes within a single chamber
InactiveUS20070116888A1Reduce pollutionElectric discharge tubesChemical vapor deposition coatingGas phaseGas composition
A method, computer readable medium, and system for vapor deposition on a substrate that introduce a first process gas composition to a process space according to a first vapor deposition process, deposit a first film on the substrate, introduce a second process gas composition into a second process space different in size than the first process space, and deposit a second film on the substrate from the second process gas composition. As such, the system includes a process chamber including a first process space having a first volume. The process chamber further includes a second process space that includes at least a part of the first process space and that has a second volume different from the first volume. The first process space is configured for a first chemical vapor deposition, and the second process space is configured for a second chemical vapor deposition.
Owner:TOKYO ELECTRON LTD
Showerhead assembly with metrology port purge
InactiveUS20110253044A1Avoid depositionLiquid surface applicatorsSpray nozzlesOptical measurementsChemical vapor deposition
A method and apparatus that may be utilized for chemical vapor deposition and / or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus is a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes metrology ports with purge gas assemblies configured and positioned to deliver a purge gas to prevent deposition thereon. In one embodiment, the metrology port is configured to receive a temperature measurement device, and the purge gas assembly is a concentric tube configuration configured to prevent deposition on components of the temperature measurement device. In one embodiment, the metrology port has a sensor window and is configured to receive an optical measurement device, and the purge gas assembly and sensor window are configured to prevent deposition on the sensor window.
Owner:APPLIED MATERIALS INC
Low wet etch rate silicon nitride film
Owner:APPLIED MATERIALS INC
Multi-zone resistive heater
InactiveUS6423949B1Improve temperature uniformitySemiconductor/solid-state device manufacturingHot plates heating arrangementsTwo temperatureEngineering
A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.
Owner:APPLIED MATERIALS INC
Method of fabricating silicon nitride nanodots
ActiveUS7092287B2Easily be in production environmentEasy to implementNanoinformaticsRead-only memoriesNanodotNitrogen
A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using N2 as the source gas.
Owner:ASM INTERNATIONAL
Nanoscopic wire-based devices, arrays, and methods of their manufacture
Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE
Plasma cleaning and etching methods using non-global-warming compounds
InactiveUS6242359B1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingTrifluoroacetic anhydrideChemical vapor deposition
Provided is a novel method of cleaning a chemical vapor deposition processing chamber having deposits on an inner surface thereof is provided. The process involves forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound, and contacting active species generated in the plasma with the inner surface of the chamber, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. Also provided is a method of etching a layer on a silicon wafer. The method involves the steps of: (a) introducing a silicon wafer into a processing chamber, the silicon wafer comprising a layer to be etched; and (b) forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound. Active species generated in the plasma are contacted with the silicon wafer, thereby etching the layer, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. The chemistries in accordance with the invention provide environmentally benign alternatives to the conventionally used global-warming chemistries for chamber cleaning and semiconductor etching processes.
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
Sequential UV induced chemical vapor deposition
Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
Owner:NOVELLUS SYSTEMS
Multi-gas distribution injector for chemical vapor deposition reactors
A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial.
Owner:VEECO INSTR
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