5215results about How to "Avoid deposition" patented technology

To provide a glass substrate-holding tool which is capable of avoiding scratching to the deposition surface of a glass substrate and dusting thereby caused as well as scratching and deposition of foreign substances at a center portion of the rear surface of the substrate and which is capable of suppressing dusting from the holding tool itself at the time of forming a multi-layered reflection film and an absorptive layer.A glass substrate-holding tool having, formed on a surface of a flat base, a catching portion for catching and holding by van der Waals forces, wherein the catching portion is in contact with only the periphery of the glass substrate.

A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

A method for forming a magnetic tunneling junction (MJT) is provided. In some embodiments, the method may include patterning one or more magnetic layers to form an upper portion of a MTJ. The method may further include patterning one or more additional layers to form a lower portion of the MTJ. In some cases, the lower portion may include a tunneling layer of the MTJ having a width greater than the upper portion. In addition, in some embodiments the method may further include patterning an electrode below the lower portion. In some cases, the electrode may include a lowermost layer with a thickness equal to or less than approximately 100 angstroms. In addition or alternatively, the electrode may have a width greater than the width of the tunneling layer. In yet other embodiments, the method may include forming spacers along the sidewalls of the upper and / or lower portions.

An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface includes a grid containing a plurality of grid grooves that separate protrusions. A plurality of gas passages is provided in the susceptor to enable an upward flow of gas toward the bottom surface of the substrate. During drop-off of the substrate, a cushion gas flow is provided to substantially slow the rate of descent of the substrate onto the susceptor and to gradually heat the substrate before it makes contact with the susceptor. Optionally, a trickle gas flow may be provided through the aforementioned passages during processing of the substrate to prevent deposition of reactant gases onto the bottom surface of the substrate. A liftoff gas flow may then be provided through the passages to help lift the substrate off of the susceptor after processing is completed and thus aid in removing the substrate from the process chamber. These features help to achieve temperature uniformity and thus quality of deposited films onto the substrate.

The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described. In one group of processes a directional deposition of silicon oxide is performed after the trench has been etched, yielding a thick oxide layer at the bottom of the trench. Any oxide which deposits on the walls of the trench is removed before a thin gate oxide layer is grown on the walls. The trench is then filled with polysilicon in or more stages. In a variation of the process a small amount of photoresist is deposited on the oxide at the bottom of the trench before the walls of the trench are etched. Alternatively, polysilicon can be deposited in the trench and etched back until only a portion remains at the bottom of the trench. The polysilicon is then oxidized and the trench is refilled with polysilicon. The processes can be combined, with a directional deposition of oxide being followed by a filling and oxidation of polysilicon. A process of forming a "keyhole" shaped gate electrode includes depositing polysilicon at the bottom of the trench, oxidizing the top surface of the polysilicon, etching the oxidized polysilicon, and filling the trench with polysilicon.

A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.

A feedthrough terminal assembly for active implantable medical devices includes a structural wire bond pad for a convenient attachment of wires from either the circuitry inside the implantable medical device or wires external to the device. Direct attachment of wire bond pads to terminal pins enables thermal or ultrasonic bonding of lead wires, while shielding the capacitor or other delicate components from the forces applied to the assembly during attachment of the wires.

A petroleum well having a well casing, a production tubing, a source of time-varying current, a downhole chemical injection device, and a downhole induction choke. The casing extends within a wellbore of the well. The tubing extends within the casing. The current source is located at the surface. The current source is electrically connected to, and adapted to output a time-varying current into, the tubing and / or the casing, which act as electrical conductors for providing downhole power and / or communications. The injection device having a communications and control module, a chemical container, and an electrically controllable chemical injector. The communications and control module is electrically connected to the tubing and / or the casing. The chemical injector is electrically connected to the communications and control module, and is in fluid communication with the chemical container. The downhole induction choke is located about a portion of the tubing and / or the casing. The chemical injector is electrically connected to the communications and control module, and is in fluid communication with the chemical container. The downhole induction choke is located about a portion of the tubing and / or the casing. The induction choke is adapted to route part of the electrical current through the communications and control module by creating a voltage potential between one side of the induction choke and another side of the induction choke. The communications and control module is electrically connected across the voltage potential. Also, a method is provided for controllably injecting a chemical into the well downhole, which may be used to: improve lift efficiency with a foaming agent, prevent deposition of solids with a paraffin solvent, improve a flow characteristic of the flow stream with a surfactant, prevent corrosion with a corrosion inhibitor, and / or prevent scaling with scale preventers.

A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.

The present invention relates to no-phosphate corrosion and scale inhibitor and its application. The no-phosphate corrosion and scale inhibitor consists of polyaspartic acid and / or polyepoxy succinic acid 10-20 wt%, polymaleic anhydride 20-30 wt%, copolymer of acrylic acid and 2-acrylamido-2-methyl propenyl sulfonic acid 15-20 wt%, zinc salt 3-5 wt%, natural organic high molecular compound 5-12 wt%, molybdate 5-8 wt%, and other components 5-20 wt%. It has excellent corrosion retarding performance, high scale inhibiting performance and environment friendship.

An exhaust aftertreatment system comprises an injector for injecting urea water into an exhaust duct, and a denitration catalyst disposed downstream of the injector with respect to a flow of exhaust gas. The exhaust aftertreatment system reduces nitrogen oxides in the exhaust gas by the denitration catalyst while using ammonia produced from the urea water injected from the injector. The urea water is injected along a direction of the flow of the exhaust gas within the exhaust duct, and a porous plate is disposed in multiple stages in a space of the exhaust duct such that droplets of the injected urea water impinge against the porous plate before reaching a wall surface of the exhaust duct. A surface of the porous plate subjected to the impingement of the droplets is arranged to face downstream with respect to the flow of the exhaust gas. Deposition of the urea water is prevented by causing film boiling when the droplets impinge against the porous plate, and the urea water reflected by the porous plate is uniformly dispersed into the exhaust gas. Thus, the urea water is uniformly dispersed into the exhaust gas without increasing a pressure loss of the exhaust gas. The urea water is prevented from depositing on the wall surface and producing a precipitate in the form of a solid.

A process cartridge detachably mountable to a main assembly of an electrophotographic image forming apparatus, includes a photosensitive drum; a developing roller rotatable in the drum-rotating direction when the cartridge is mounted to the apparatus; first and second separation members disposed at one and the other end of the roller so as to provide a gap between the roller and the drum and contacting the drum surface adjacent one and the other end thereof; a charging roller, contacting and charging the drum, which is rotatable with a peripheral speed difference relative to the drum; and a cleaning member contacting the drum adjacent one end thereof, the cleaning member having an effective area outside a developing-roller developing zone and inside a charging-roller-and drum contact region and which is in a region where the first separation member contacts the drum.

An assembly and method for introducing a reducing agent into an exhaust pipe of an exhaust system of an internal combustion engine, in particular of a motor vehicle includes a feed connector which opens into the exhaust pipe and has a wall; a feed device for reducing agents which opens into the feed connector; and a device that generates a gas flow which is additional to the reducing agent flow and lines the wall of the feed connector.

The invention relates to a micro-device with a cavity (50), the micro-device comprising a substrate (10, 110), the method comprising steps of: A) providing the substrate (10, 110), having a surface and comprising a sacrificial oxide region (20, 107, 115) at the surface ( ); B) covering the sacrificial oxide region (20, 107, 115) with a porous layer (40, 114, 124) being permeable to a vapor HF etchant (100), and C) selectively etching the sacrificial oxide region (20, 107, 115) through the porous layer (40, 114, 124) using the vapor HF etchant (100) to obtain the cavity (50). This method may be used in the manufacture of various micro-devices with a cavity (50), i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.

The invention provides a fluid product service life testing device. The fluid product service life testing device comprises a fluid generation device, a fluid product testing region and a washing device, wherein a fluid circulating pipeline is formed between the fluid generation device and the fluid product testing region; fluid flows into the fluid product testing region from the fluid generationdevice and then continually flows back into the fluid generation device; the washing device is communicated with the fluid circulating pipeline; the washing device is communicated with the fluid product testing region and then is communicated with the fluid generation device through the fluid circulating pipeline; the fluid generation device is connected with a sediment recycling device. The fluid product service life testing device can be used for testing the service life of a product through simulating fluid flowing of production conditions.

Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.

The invention discloses an intake and exhaust system of a turbine engine. The intake and exhaust system of the turbine engine comprises an intake system and an exhaust system, wherein the intake system is connected with an intake port of the turbine engine, the exhaust system is connected with an exhaust port of the turbine engine, the intake system comprises an intake filter and an intake pipeline, the intake filter is connected with the intake pipeline, the intake filter adopts a V-shaped structure, and a rain shielding cap is arranged at the exhaust tail end of the exhaust system. The intake and exhaust system of the turbine engine has the beneficial effects that the air inlet area is large, the air inlet flow speed is lower, the service life of an air filter is long, the rain shieldingcap additionally arranged at the exhaust port avoids the rainwater deposition in an exhaust silencer, the condition that rainwater possibly flows backwards is avoided and damages the turbine engine,and an opening of the rain shielding cap is away from the intake port, so that exhausted waste gas is prevented from being sucked by the intake port, and the quality of inlet air is ensured.

The invention relates to a copolymer consisting of the following monomer components: a) 48-98 wt. % of compounds of formula (I), b) 2-30 wt. % of one or several oxygen-containing methacrylates of formula (II) and c) 0-30 wt. % of a methacrylate of formula (III) of styrol, the quantities a)-c) totalling 100 wt. %. The inventive copolymer is suitable as a an additive for diesel fuels and biodiesel.

Heat dissipation and electromagnetic interference (EMI) shielding for an electronic device having an enclosure. An interior surface of the enclosure is covered with a conformal metallic layer which, as disposed in thermal adjacency with one or more heat-generating electronic components or other sources contained within the enclosure, may provide both thermal dissipation and EMI shielding for the device. The layer may be sprayed onto the interior surface in a molten state and solidified to form a self-adherent coating.

A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.

Provided is a base metal undercoat containing catalyst and an exhaust article containing the catalyst. The catalyst contains a base metal undercoat with an oxygen storage component, and at least one catalytic layer. Also provided are methods for preparing the catalyst and methods for monitoring the oxygen storage capacity of an exhaust article containing the catalyst.

The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.

A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

A liquid heating module for use in a hot beverage machine, a beverage forming system that includes the module, and a process for heating liquid for forming beverages. The liquid heating module includes a hollow metal tube, a cylindrical insert which is disposed inside the hollow tube along its entire length and substantially along its axis of symmetry, at least one electrical resistor on a first outer part of the tube for preheating liquid flowing through the tube, and at least one additional electrical resistor on a second outer part of the tube for temperature adjustment of the liquid flowing through the tube.

Provided are an exhaust treatment catalyst and an exhaust article containing the catalyst. The catalyst comprises: (a) a carrier; (b) a first layer deposited on the carrier, said first layer comprising substantially only at least one refractive metal oxide; (c) a second layer deposited on the first layer, said second layer comprising substantially only at least one oxygen storage component and at least one binder therefor; and (d) a third layer deposited on the second layer, said third layer comprising at least one layer of one or more platinum group metal components supported on a refractory metal oxide support. Optionally, a fourth layer is deposited on the third layer wherein the fourth layer comprises one or more platinum group metal components supported on a refractory metal oxide support. As a further option, an overcoat layer may be deposited on the third or fourth layer wherein the overcoat layer comprises a catalyst poison sorbent. Also provided are methods for preparing the catalyst and methods for monitoring the exhaust storage capacity of an exhaust article containing the catalyst.

The present invention relates to a method of making nanoparticulates in a flame reactor, the nanoparticulates having controlled properties such as weight average particle size, composition and morphology. The nanoparticulates made with the method of present invention may be tailored to a specific weight average particle size range, such as from about 1 nm to about 500 nm. In addition to weight average particle size, the nanoparticulates made with the method of the present invention may include a variety of materials including metals, ceramics, organic materials, and combinations thereof. Moreover, the method of the present invention allows control over the morphology of the nanoparticulates, which allows the production of nanoparticulates with any desired morphology including spheroidal and unagglomerated; and agglomerated (aggregated) into larger units of hard aggregates.