671results about How to "Reduce electric field strength" patented technology

Provided is a magnetic carrier satisfying leakage, white spots, charging property and high developing performance in a low electric field and having excellent durability. The magnetic carrier is a magnetic carrier comprising a magnetic substance-dispersed resin carrier core containing a magnetic substance and a binder resin, and a coating resin on a surface thereof, wherein the magnetic substance comprises a magnetic substance A having a shape without vertexes and a magnetic substance B having a shape with vertexes, the magnetic substance B has a number average particle diameter of 0.40-2.00 μm, and in a reflection electron image of a section of the magnetic substance-dispersed resin carrier core taken by a scanning electron microscope, an area proportion of the magnetic substance B is larger than an area proportion of the magnetic substance A within a region from the surface of the magnetic substance-dispersed resin carrier core to a depth of 1.0 μm.

A method for soft tissue destruction comprises applying high voltage pulses causing irreversible electroporation alternating with low amplitude pulses of opposite polarity balanced to provide negligible average current and minimize risk of electrical shock. The method may be accompanied by tissue heating to reduce the electroporation threshold and negative pressure for skin shaping and optimal voltage distribution.

A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.

The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described. In one group of processes a directional deposition of silicon oxide is performed after the trench has been etched, yielding a thick oxide layer at the bottom of the trench. Any oxide which deposits on the walls of the trench is removed before a thin gate oxide layer is grown on the walls. The trench is then filled with polysilicon in or more stages. In a variation of the process a small amount of photoresist is deposited on the oxide at the bottom of the trench before the walls of the trench are etched. Alternatively, polysilicon can be deposited in the trench and etched back until only a portion remains at the bottom of the trench. The polysilicon is then oxidized and the trench is refilled with polysilicon. The processes can be combined, with a directional deposition of oxide being followed by a filling and oxidation of polysilicon. A process of forming a “keyhole” shaped gate electrode includes depositing polysilicon at the bottom of the trench, oxidizing the top surface of the polysilicon, etching the oxidized polysilicon, and filling the trench with polysilicon.

The invention discloses an integrated treatment method capable of desulfurizing, denitrating and dust-removing at the same time, and provides a device which adopts the treatment method. Smoke formed after the combustion in a boiler contains the main ingredients of SO2, NOX and dust, and passes through a plasma generation electrode; generated plasmas contain a large amount of high-energy electronics and act on O2 and H2O to generate a large quantity of active particles, such as H, O, OH and O3. The SO2 and the NOX can perform chemical reaction to generate high-valence state sulfur oxides and nitrogen oxides under the effect of the active particles, and then the sulfur oxides and the nitrogen oxides are combined with introduced ammonia gas to generate ammonium salts; the ammonium salts are recovered and serve as secondary products; and therefore, the desulfurizing and the denitrating are realized. In the process, charged particles in the plasmas can electrify dust particles, so that the charged particles can move directionally under the effect of an additional direct-current bias electric field; and therefore, the function of removing the dust is realized. According to the method and the device, the static electricity dust removal and the plasma desulfurizing and denitrating are integrated, so that the number of power supplies is reduced, the efficiency of a discharge power supply is improved, the energy consumption can be reduced, the investment is saved, the occupied area is reduced, and the cost is reduced.

A memory cell patterned as a trench transistor is provided with a first gate electrode (4) as auxiliary gate for source-side injection and a second gate electrode (5) electrically insulated therefrom, which are arranged in the trench, and has, at the trench walls, a storage layer sequence (10) provided for charge trapping and comprising a storage layer (12) between boundary layers (11, 13). The first gate electrode (4) and the second gate electrode (5) are electrically insulated from one another, which can be effected by means of a portion of the storage layer sequence (10). Source / drain regions (3) are arranged on the top side laterally with respect to the trenches. Word lines (6), source / drain lines and control gate lines are present for the electrical driving.

A data slicer 300 includes a slice level calculation unit 310 that determines whether a detected digital video signal is a CRI signal on the basis of the amplitude of the signal, and sets a reference slice level and upper and lower slice levels which are obtained by providing offset in the reference slice level, by using only the CRI signal; a data slicing unit 160 that binarizes a digital video signal S140 using the slice levels; a decoding circuit 170 that converts binarized serial data into parallel data; and a data selection unit 320 that selects data including no error from the decoded data, and outputs the selected data through a video signal output terminal 190. Therefore, even when the video signal is distorted, this data slicer can set appropriate slice level data to binarize the video signal, thereby suppressing the occurrence rate of decoding errors.

A quadrupole ion trap includes a switch (3) for switching a trapping voltage between discrete voltage levels VH, VL. This creates a digital trapping field for trapping precursor ions and product ions in a trapping region of the ion trap. A gating voltage is applied to a gate electrode (12) to control injection of source electrons into the ion trap. Application of the gating voltage is synchronised with the switching so that electrons are injected into the trapping region while the trapping voltage is at a selected one of the voltage levels and can reach the trapping region with a kinetic energy suitable for electron capture dissociation to take place.

The invention provides a thin film transistor (TFT) array substrate, a manufacture method thereof and a display device, which relate to the field of display device manufacture and prevent an electrode slit corner from generating a liquid crystal contrarotation domain and a disclination line so as improve light transmitting rate of the area. The method includes that by changing the shape of a lower-layer electrode, and the slit corner of an upper-layer electrode and the lower-layer electrode do not have corresponding overlapping in the vertical direction so that electric field strength of the area is weakened. An embodiment of the TFT array substrate, the manufacture method and the display device is applied to manufacture of the TFT array substrate.

A semiconductor device and a forming method thereof are provided. The semiconductor device comprises a semiconductor substrate, a body region and a drift region disposed in the semiconductor substrate, a body connecting region and a source region disposed in the body region, a drain region and a first shallow trench isolation structure disposed in the drift region, and a gate structure disposed on the surface of the semiconductor substrate and across the edges of the body region and the drift region, wherein the first shallow trench isolation structure is disposed between the drain region and the body region, the bottom of the first shallow trench isolation structure is step-shaped, the adjacent steps are not the same in depth, and the gate structure covers part of the surface of the first shallow trench isolation structure. The on resistance of the drift region can be reduced and the on current of the drift region can be increased without lowering the voltage endurance capability.

An electrostatic sprayer for spraying a liquid includes a nozzle formed from a a nozzle body that has an inlet for receiving a liquid and a liquid tip having an outlet for ejection of the liquid to form a liquid spray. The nozzle also includes an electrode disposed around the outlet of the liquid tip for charging the liquid and a dielectric shroud disposed around at least a portion of the liquid tip to prevent leakage currents from reducing a potential of the electric field between the liquid and the electrode, which would otherwise reduce the effectiveness of the sprayer. A conductor that couples the electrode to a power supply may pass through a hole extending through the shroud. The shroud may include one or more vents to permit air and liquid to pass through the dielectric shroud to reduce accumulation of liquid.

A data slicer 300 includes a slice level calculation unit 310 that determines whether a detected digital video signal is a CRI signal on the basis of the amplitude of the signal, and sets a reference slice level and upper and lower slice levels which are obtained by providing offset in the reference slice level, by using only the CRI signal; a data slicing unit 160 that binarizes a digital video signal S140 using the slice levels; a decoding circuit 170 that converts binarized serial data into parallel data; and a data selection unit 320 that selects data including no error from the decoded data, and outputs the selected data through a video signal output terminal 190. Therefore, even when the video signal is distorted, this data slicer can set appropriate slice level data to binarize the video signal, thereby suppressing the occurrence rate of decoding errors.

The invention discloses a static spraying composite film and a preparation method and application thereof. A PVDF nanofiber thin film is spun on a roller receiver through electrostatic spinning to serve as a supporting material, then a layer of Cur-PLA microspheres is sprayed through an electrostatic spraying method, and a double-layer film is obtained; an Enro-PLA nanofiber film is spun on the double-layer film through an electrostatic spinning method, drying is carried out, and the electrostatic spraying composite film is obtained. Medicine is carried on polylactic acid fibers and the microspheres, so that the biological activity and antibacterial property of the electrospinning film are achieved; compared with like products, a hydrophilic face formed by the PLA microspheres and the PLA fibers is not single in medicine release capacity, wider in antibacterial performance and larger in contact area with the skin surface. PVDF is adopted as an outer layer for isolating invasion of water vapor and bacteria. The preparation method is simple, the production cost is low, large-scale production can be achieved, application and popularization are convenient, and the final product can completely meet various clinical needs.

A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance.