118949 results about "Ion" patented technology

A low energy process for producing acetic acid by the carbonylation of methanol is disclosed. The process involves a rhodium-catalyzed system operated at less than about 14% water utilizing up to 2 distillation columns. The process is preferably controlled such that the product stream has a low level of propionic acid impurity and the level of aldehyde impurities is minimized by way of aldehyde removal or minimizing aldehyde generation. The level of iodides is controlled by contacting the product, at elevated temperatures, with ion exchange resins. In preferred embodiments, at least one silver or mercury exchanged macroreticular strong acid ion exchange resin is used to purify the product. The high temperature treatment provides the added benefit of controlling the Color Value (Pt-Co units) of the product stream.

The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

The invention provides long-persistent phosphors, methods for their manufacture and phosphorescent articles. The invention also provides a method for generating a long-persistent phosphorescence at a selected color. The phosphors of the invention may be alkaline earth aluminates, alkaline earth silicates, and alkaline earth aluminosilicates. The phosphors include those activated by cerium. The phosphors also include those in which persistent energy transfer occurs from a donor ion to an acceptor ion, producing persistent emission largely characteristic of the acceptor ion.

A programmable sub-surface aggregating metallization sructure ("PSAM") includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of the two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage. The break in the metal dendrite can be reclosed by applying yet another voltage. Changes in the length of the dendrite or the presence of a break in the dendrite affect the resistance, capacitance, and impedance of the PSAM.

Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical / ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.

In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depends, in part, on the availability of metal ions. It is important that the metal ions come only from the solid solution of the memory cell body. If additional metal ions are supplied from other sources, such as the sidewall edge at the anode interface, the amount of metal ions may not be directly related to the strength of the electric field, and the programming will not respond consistently from cell to cell. The embodiments described herein provide new and novel structures that block interface diffusion paths for metal ions, leaving diffusion from the bulk glass electrolyte as the only supply of metal ions for conductive pathway formation.