83289 results about "Room temperature" patented technology

A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 OMEGA-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

A thin film made of an amorphous material having supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.

A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process the method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.

A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

In an aspect of the invention, a fluoropolymer dispersion, preferably a PTFE dispersion, is provided that comprises fluoropolymer particles having an average particle size of 10 to 400 nm dispersed in water whereby the dispersion has an amount of solids between 35 and 70% by weight. The dispersion is free of fluorinated surfactant having a molecular weight of less than 1000 g / mol (hereinafter called low molecular weight fluorinated surfactant) or contains the low molecular weight fluorinated surfactant in an amount of not more than 0.05% by weight based on the total weight solids of the dispersion. The dispersion further comprises a non-ionic non-fluorinated surfactant or mixture of non-ionic non-fluorinated surfactants and one or more non-fluorinated anionic surfactants. Through the use of a non-fluorinated anionic surfactant, a dispersion is obtained that has a low viscosity at room temperature (20° C.). The dispersion is further free of aromatic group containing non-ionic surfactants and is accordingly environmentally more friendly and can yield coatings that are less susceptible of discoloration. The amount and nature of the non-ionic non-fluorinated surfactant or mixture of non-ionic non-fluorinated surfactants is selected such that the Viscosity Transition Temperature (VTT) (measured as set forth in the examples) of the fluoropolymer dispersion is at least 26, preferably at least 28° C. In a further aspect of the invention, a method is provided to obtain the aforementioned dispersion.

The ability to design and construct solid-state materials with pre-determined structures is a grand challenge in chemistry. An inventive strategy based on reticulating metal ions and organic carboxylate links into extended networks has been advanced to a point that has allowed the design of porous structures in which pore size and functionality can be varied systematically. MOF-5, a prototype of a new class of porous materials and one that is constructed from octahedral Zn—O—C clusters and benzene links, was used to demonstrate that its 3-D porous system can be functionalized with the organic groups, —Br, —NH2, —OC3H7, —OC5H11, —H4C2, and —H4C4, and its pore size expanded with the long molecular struts biphenyl, tetrahydropyrene, pyrene, and terphenyl. The ability to direct the formation of the octahedral clusters in the presence of a desired carboxylate link is an essential feature of this strategy, which resulted in the design of an isoreticular (having the same framework topology) series of sixteen well-defined materials whose crystals have open space representing up to 91.1% of the crystal volume, and homogeneous periodic pores that can be incrementally varied from 3.8 to 28.8 angstroms. Unlike the unpredictable nature of zeolite and other molecular sieve syntheses, the deliberate control exercised at the molecular level in the design of these crystals is expected to have tremendous implications on materials properties and future technologies. Indeed, data indicate that members of this series represent the first monocrystalline mesoporous organic / inorganic frameworks, and exhibit the highest capacity for methane storage (155 cm3 / cm3 at 36 atm) and the lowest densities (0.41 to 0.21 g / cm3) attained to date for any crystalline material at room temperature.