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3900 results about "Nano structuring" patented technology

Process for the preparation of nanostructured materials

The present invention comprises a novel process for the preparation of carbon based structured materials with controlled topology, morphology and functionality. The nanostructured materials are prepared by controlled carbonization, or pyrolysis, of precursors comprising phase separated copolymers. The precursor materials are selected to phase separate and self organize in bulk, in solution, in the presence of phase selective solvents, at surfaces, interfaces or during fabrication, into articles, fibers or films exhibiting well-defined, self-organized morphology or precursors of well-defined, self-organized, bi- or tri-phasic morphology. Compositional control over the (co)polymers provides control over the structure of the phase separated precursor whose organization therein dictates the nanostructure of the material obtained after carbonization or pyrolysis, wherein each dimension of the formed structure can be predetermined. When the precursor morphology is selected to comprise cylindrical domains this procedure additionally allows for the direct formation of two dimensional nanowire grids or arrays of oriented nanostructures on surfaces. When these nanowire grids or arrays are perpendicularly oriented to the surface applications include field emitters, high surface area electrodes, electronic devices such as diodes and transistors, tools for AMF tips and elements of molecular electronics. When the first nanostructured morphology is selected to form cylinders parallel to the surface then nanowire arrays are formed after pyrolysis. When the composition of the first nanostructured morphology is selected to comprise a continuous precursor matrix then a continuous carbon based nanostructured material is formed. The internal structure of the carbon based material can be selected to comprise perpendicular pores or an interconnected array of pores. The carbon based structures can additionally find application in photovoltaics, supercapacitors, batteries, fuel cells, computer memory, carbon electrodes, carbon foams, actuators and hydrogen storage.
Owner:CARNEGIE MELLON UNIV

General electronic paste based on graphene filler

The invention discloses general electronic paste based on graphene filler. The electronic paste contains graphene-containing conductive filler, an organic carrier, a solvent and an auxiliary agent. Because the graphene has good electronic conductivity and a unique two-dimensional laminar nano structure, the graphene forms a conductive network in the organic carrier more easily, and the electric conductivity of the electronic paste is improved by adding the graphene. Further, the conductive filler also contains a conductive material with relatively high electric conductivity, so that the electric conductivity of the electronic paste is further improved. Because the graphene and the conductive material are compounded to form the conductive filler, the electronic paste has good electric conductivity. The electronic paste can obtain a relatively wide electric conductivity range by changing the category of the conductive material mixed with the graphene and adjusting the relative proportion of the graphene to the conductive material of different category. The electric conductivity of the electronic paste is 1*10<-3>S / cm to 1*10<3>S / cm. The paste can be widely applied, and can be particularly used as a conductive coating or adhesive.
Owner:NINGBO GRAPHENE INNOVATION CENT CO LTD

Method of forming sensor for detecting gases and biochemical materials, integrated circuit having the sensor, and method of manufacturing the integrated circuit

InactiveUS20080121946A1Characteristics degradation of an integrated circuit caused by heating the unit devices when forming the sensor can be preventedSemiconductor/solid-state device manufacturingNanosensorsMOSFETNano structuring
A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.
Owner:ELECTRONICS & TELECOMM RES INST

Anode compositions for lithium secondary batteries

A lithium secondary battery comprising a cathode, an anode, and a separator-electrolyte assembly or electrolyte layer disposed between the cathode and the anode, wherein the anode comprises: (a) an integrated nano-structure of electrically conductive nanometer-scaled filaments that are interconnected to form a porous network of electron-conducting paths comprising interconnected pores, wherein the filaments have a transverse dimension less than 500 nm; and (b) a foil of lithium or lithium alloy as an anode active material. The battery exhibits an exceptionally high specific capacity, an excellent reversible capacity, and a long cycle life.
Owner:GLOBAL GRAPHENE GRP INC

Photovoltaic devices printed from nanostructured particles

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, a solar cell is provided that comprises of a substrate, a back electrode formed over the substrate, a p-type semiconductor thin film formed over the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type semiconductor thin film, and a transparent electrode formed over the n-type semiconductor thin film. The p-type semiconductor thin film results by processing a dense film formed from a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and / or VIA, wherein the dense film has a void volume of about 26% or less. The dense film may be a substantially void free film.
Owner:AERIS CAPITAL SUSTAINABLE IP

Customized polishing pads for CMP and methods of fabrication and use thereof

The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.
Owner:CMC MATERIALS INC

Structure and method for production of the same

The invention provides a nanostructure including nanowires having very small diameters and integrated at a high density, and capable of being applied to still further high-functional devices. The invention provides a structure including a substrate or substrate having an underlayer, and a structure formed on the substrate or substrate having an underlayer, wherein the structure includes a columnar first part (part) and a second part (part) formed to surround the first part, and the second part comprises two or more types of materials capable of forming eutectic crystals, one type of the materials is a semiconductor material, and the height of the first part from the substrate is greater than the height of the second part from the substrate.
Owner:CANON KK

Graphene/ stannic oxide nanometer compounding resistance type film gas sensor and manufacturing method thereof

The invention discloses a graphene/ stannic oxide nanometer compounding resistance type film gas sensor, which takes ceramics as a basal body. The surface of the ceramic basal body is photo-etched and evaporated with multiple pairs of interdigital gold electrodes, and is coated with gas-sensitive films of graphene and stannic oxide nanometer composite, and the manufactured resistance type film gas sensor has the advantages of simple manufacturing process and low cost. The gas-sensitive film is composed of a grapheme namosheet layer in a three-dimensional nano-structure and stannic oxide crystal particle composite with an orientated growth characteristic, the introduction of the graphene can favorably reduce the resistance of sensor elements, and the formation of the three-dimensional nano-structure can obviously enhance the specific surface area of the composite, thus the absorption and the diffusion of the gas can be promoted so as to greatly enhance the room temperature gas sensitive response sensitivity of elements. The graphene/stannic oxide nanometer compounding resistance type film gas sensor has the characteristics of high response sensitivity to low concentration ammonia, fast response, favorable recovering performanc, capability of carrying out the detection at the room temperature, and the like, which can be widely applied in the agricultural and industrial production process, and the room temperature detection and control of the concentration of ammonia in the atmospheric environment.
Owner:ZHEJIANG UNIV

Preparation method for graphene heating film

The invention belongs to the field of carbon materials, and particularly relates to a preparation method for a graphene heating film. Graphene powder is evenly scattered in an organic solvent by using an ultrasonic method, a stirring method and other methods to obtain a graphene solution with the concentration of 0.05mg/ml to 0.5mg/ml, the graphene evenly covers an organic filter film or a water-attributed filter film through a suction filtration method, the grapheme film and the filter film are separated through a mechanical stripping method or a soaking method or an organic solvent dissolving method, the graphene thin film is obtained, electrodes are added to the graphene thin film, and heat can be generated by applying voltages on the graphene thin film. According to the preparation method for the graphene heating film, the unique two-dimensional nano-structure, the characteristic of the large ratio of thickness to radial dimension and the characteristic of the high specific surface area of the graphene are utilized, through the preparation technology, evenly communicated conductive networks are formed among graphene sheet layers, and much heat can be generated by applying low voltages (1-10V). The preparation method for the graphene heating film has the advantages that the preparation process is simple and easy to control and free of pollution, and the size is adjustable, and the preparation method for the graphene heating film is suitable for large-scale production.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Multicolor LED and Method of Fabricating Thereof

A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.
Owner:NANOSYS INC
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