11284results about "Lapping machines" patented technology

The present invention discloses a CMP pad dresser which has a plurality of uniformly spaced abrasive particles protruding therefrom. The abrasive particles are super hard materials, and are typically diamond, polycrystalline diamond (PCD), cubic boron nitride (cBN), or polycrystalline cubic boron nitride(PcBN). The abrasive particles are brazed to a substrate which may be then coated with an additional anti-corrosive layer. The anti-corrosive layer is usually a diamond or diamond-like carbon which is coated over the surface of the disk to prevent erosion of the brazing alloy by the chemical slurry used in conjunction with the CMP pad. This immunity to chemical attack allows the CMP pad dresser to dress the pad while it is polishing a workpiece. In addition to even spacing on the substrate, the abrasive particles extend for a uniform distance away from the substrate, allowing for even grooming or dressing of a CMP pad both in vertical and horizontal directions. A method of producing such a CMP pad dresser is also disclosed.

Electrocatalyst powders and methods for producing electrocatalyst powders, such as carbon composite electrocatalyst powders. The powders have a well-controlled microstructure and morphology. The method includes forming the particles from an aerosol of precursors by heating the aerosol to a relatively low temperature, such as not greater than about 400° C.

Polymer-based pads useful for polishing objects, particularly integrated circuits, having interconnected porosity which is uniform in all directions, and where the solid portion of said pad consists of a uniform continuously interconnected polymer material of greater than 50% of the gross volume of the article, are produced directly to final shape and dimension by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer and at a pressure in excess of 100 psi in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other. When pressure sintered at a temperature not to exceed the melting point of the lower melting powder, the increased stiffness afforded by incorporation of the higher melting polymer component gives improved mechanical strength to the sintered product. Conditions for producing the pads of this invention are such that the polymer powder particles from which the pads are produced essentially retain their original shape and are point bonded to form the pad.

Polishing apparatus and related methods employ aligned first and second magnetic field sources to adjust the compressive force and / or pressure applied by a carrier head against a target workpiece (such as a wafer) by selectively and controllably generating a repellant or attractive force between the two magnetic field sources.

A polishing pad is formed as a one-piece article having a region which is transparent and an adjacent region which is opaque. The article is formed by solidifying a flowable polymeric material which at least initially has a uniform composition. The flowable polymeric material is processed during a molding operation to provide the transparent region and the adjacent opaque region. Types of polymeric material suitable for making the polishing pad include a single thermoplastic material, a blend of thermoplastic materials, and a reactive thermosetting polymer.

This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Methods and apparatus for film measurement and endpoint detection in a noisy environment, such as CMP processing of semiconductor wafers, are disclosed, characterized by the use of spectral analysis of intensity data derived from light reflected off the sample to estimate film thickness or detect an endpoint condition.

A polishing system includes a polishing tool having a platen, a polishing pad, and a controller. The platen is adapted to have the polishing pad attached thereto. The polishing pad includes a polishing surface and a back surface that is opposite the polishing surface. At least one sender electrode and at least one response electrode is disposed in the polishing pad. The controller is coupled to the polishing tool. A method includes polishing a conductive process layer of a wafer using a polishing pad of a polishing tool having at least one sender electrode and at least one response electrode disposed therein. A signal is provided to the at least one sender electrode. The signal provided to the at least one sender electrode is monitored with at least one of a group of the at least one response electrode, the at least one response electrode communicating with the at least one sender electrode through the conductive process layer of the wafer. Endpoint of the polishing process is determined based on the signal received by the at least one response electrode.

A method fabricates a transducer having an air-bearing surface (ABS). The method includes providing at least one near-field transducer (NFT) film and providing an electronic lapping guide (ELG) film substantially coplanar with a portion of the at least one NFT film. The method also includes defining a disk portion of an NFT from the portion of the at least one NFT film and at least one ELG from the ELG film. The disk portion corresponds to a critical dimension of the NFT from an ABS location. The method also includes lapping the at least one transducer. The lapping is terminated based on a signal from the ELG.

In-line thickness measurement of a dielectric film layer on a surface of a workpiece subsequent to a polishing on a chemical-mechanical polishing machine in a polishing slurry is disclosed. The workpiece includes a given level of back-end-of-line (BEOL) structure including junctions. The measurement apparatus includes a platen and an electrode embedded within the platen. A positioning mechanism positions the workpiece above the electrode with the dielectric layer facing in a direction of the electrode. A slurry dam is used for maintaining a prescribed level of a conductive polishing slurry above the electrode, the prescribed level to ensure a desired slurry coverage of the workpiece. A capacitance sensor senses a system capacitance C in accordance with an RC equivalent circuit model, wherein the RC equivalent circuit includes a resistance R representative of the slurry and workpiece resistances and the system capacitance C representative of the dielectric material and junction capacitances. Lastly, a capacitance-to-thickness converter converts the sensed capacitance to a dielectric thickness in accordance with a prescribed system capacitance / optical thickness calibration, wherein the prescribed calibration corresponds to the given level of BEOL structure of the workpiece.

New demounting methods and apparatuses for separating temporarily, permanently, or semi-permanently bonded substrates and articles formed from those methods and apparatuses are provided. The methods comprise demounting a device wafer from a carrier wafer or substrate that have only been strongly bonded at their outer perimeters. The edge bonds are chemically, mechanically, acoustically, or thermally softened, dissolved, or disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. A clamp for facilitating separation of the bonded substrates is also provided.

An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.

Aspects of the invention generally provide a method for polishing a material layer using electrochemical deposition techniques, electrochemical dissolution techniques, polishing techniques, and / or combinations thereof. In one aspect of the invention, the polishing method comprises applying a separate electrical bias, such as a voltage, to each of a plurality of zones of an electrode. Determining the separate biases comprises determining a time that at least one portion of the material layer is associated with each of the zones of the counter-electrode.

A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and / or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.

After a hole is formed in a polishing pad, a transparent window plate is inserted into the hole. Here, a gap is left between the upper surface of the transparent window plate and the outermost surface constituting the working surface of the polishing pad. During polishing, the polishing head holding the wafer applies a load to the polishing pad by means of a load-applying mechanism, so that the polishing pad and transparent window plate are compressed. In this case, the system is arranged so that the gap remains constant, and so that a dimension equal to or greater than a standard value is maintained. Since the upper surface of the transparent window plate is recessed from the upper surface of the polishing pad, there is no scratching of the surface of the transparent window plate during dressing. Accordingly, the polishing pad has a long useful life.

The present invention provides a chemical mechanical polishing pad comprising a polishing pad having a window formed therein and wherein the window is formed from a reaction of an aliphatic polyisocyanate, a hydroxyl-containing material and a curing agent.

The disclosure relates to abrasive articles useful in chemical-mechanical polishing (CMP), the articles including a substrate with opposite major surfaces, an abrasive material overlaying at least a portion of at least one of the major surfaces, a means for providing CMP information positioned near the substrate, and a transmitter positioned near the substrate and adapted to transmit the CMP information to a remote receiver. The disclosure also relates to a CMP pad conditioner having a means for communicating CMP information, a CMP process monitoring system, and a method for conditioning a CMP pad.

Coated abrasives suitable for very fine abrading applications can be obtained by depositing a layer of a formulation comprising abrasive grits, fillers, grinding aid, additives and a binder resin on a substrate in the form of a structured abrasive, adhering to the surface of the structured abrasive a functional powder; and then applying a top size coat over the functional powder.

A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive surface), optically determining a reflective measure of a plurality of locations of the polished surface as the portion of the device oscillates off the abrasive surface and calculating depths of the locations of the polished surface based of the reflective measure.

A slurry containing abrasive particles and a pH buffering component comprising at least one acid or salt thereof and at least one base is especially useful for polishing surfaces, including those used in microelectronics.

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.

The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

A system for conditioning rotatable polishing pads used to planarize and polish surfaces of thin film integrated circuits deposited on semiconductor wafer substrates, microelectronic, and optical system. The system has a pad conditioning apparatus, process fluids, a vacuum capability to pull waste material out of the conditioning pad, self-contained flushing means, and a piezo-electric device for vibrating the pad conditioning apparatus.

The present invention provides a polishing pad for electrochemical mechanical polishing of conductive substrate. The pad comprises a plurality of grooves formed in a polishing surface of the polishing pad, the grooves being adapted to facilitate the flow of polishing fluid over the polishing pad. The conductive layers are respectively formed in the grooves and are in electrical communication with each other.

Nickel powder batches including coated nickel-containing particles and methods for producing the same. The coated nickel-containing particles having have a small particle size, narrow size distribution and a spherical morphology. The present invention is also directed to devices incorporating the coated nickel-containing particles.