A precursor source mixture useful for CVD or ALD of a film comprising: at least one precursor composed of an element selected from the group consisting of Li, Na, K, Rb, Cs, Fr, Be, Mg, Ti, Zr, Hf, Sc, Y, La, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, P, Sb and Bi, to which is bound at least one ligand selected from the group consisting of
hydride,
alkyl, alkenyl, cycloalkenyl,
aryl,
alkyne, carbonyl, amido, imido, hydrazido, phosphido, nitrosyl,
nitryl,
nitrate,
nitrile,
halide,
azide, alkoxy, siloxy, silyl, and halogenated, sulfonated or silyated derivatives thereof, which is dissolved, emulsified or suspended in an
inert liquid selected from the group consisting of aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, ethers, aldehydes, ketones, acids,
phenols, esters, amines, alkylnitrile, halogenated hydrocarbons, silyated hydrocarbons, thioethers, amines, cyanates, isocyanates, thiocyanates,
silicone oils, nitroalkyl, alkylnitrate, and mixtures thereof. The precursor source mixture may be a solution,
emulsion or suspension and may consist of a mixture of
solid, liquid and gas phases which are distributed throughout the mixture.