5067 results about "Fluorocarbon" patented technology

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

Methods of etching HAR features in a dielectric layer are described. In one embodiment, a substrate is provided into an etch chamber. The substrate has a patterned mask disposed on a dielectric layer formed thereon where the patterned mask has openings. A gas mixture is provided into the etch chamber, the gas mixture includes CO, O2, a fluorocarbon gas, and an optional inert gas. A plasma is formed from the gas mixture. Features are etched in the dielectric layer through the openings in the presence of the plasma

The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat / planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.

The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and / or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier / liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å / min.

A example method of forming of a contact hole by removing residue and oxide spacer beside a nitride spacer after a CF containing etch. We provide a gate structure with nitride spacers on the sidewalls of the gate. We provide a dielectric layer (oxide) over the substrate and gate structure. We form a contact photoresist pattern over the oxide dielectric layer. We etch the oxide dielectric layer using fluorocarbons (CxFy) to form contact openings and residual spacer. The photoresist is striped. Preferably, a NF3 and N2 and H2 plasma treatment is performed to deposit a byproducts layer over the residual spacer. The byproducts layer and residual spacer are removed preferably using one of the following processes: (1) heat (2) DI rinse or (3) IR or UV radiation.

The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves a fluorocarbon rich plasma pretreatment of interior surface of the pathway from the remote chamber to the surface deposits.

The present invention relates to a remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The process involves activating a gas stream comprising an oxygen source, NF3, and a fluorocarbon and contacting the activated gas mixture with surface deposits to remove the surface deposits.

A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a fluorocarbon gas having the chemical formula CxHyFz, where x and z are equal to unity or greater and y is equal to 0 or greater.

A method of selectively removing fluorocarbon layers from overlying low-k dielectric material is described. These protective plasma treatments (PPT) are delicate alternatives to traditional post-etch treatments (PET). The method includes sequential exposure to (1) a local plasma formed from a silicon-fluorine precursor followed by (2) an exposure to plasma effluents formed in a remote plasma from a fluorine-containing precursor. The remote plasma etch (2) has been found to be highly selective of the residual material following the local plasma silicon-fluorine exposure. The sequential process (1)-(2) avoids exposing the low-k dielectric material to oxygen which would undesirably increase its dielectric constant.

Surfactants (e.g., fluorosurfactants) for stabilizing aqueous or hydrocarbon droplets in a fluorophilic continuous phase are presented. In some embodiments, fluorosurfactants include a fluorophilic tail soluble in a fluorophilic (e.g., fluorocarbon) continuous phase, and a headgroup soluble in either an aqueous phase or a lipophilic (e.g., hydrocarbon) phase. The combination of a fluorophilic tail and a headgroup may be chosen so as to create a surfactant with a suitable geometry for forming stabilized reverse emulsion droplets having a disperse aqueous or lipophilic phase in a continuous, fluorophilic phase. In some embodiments, the headgroup is preferably non-ionic and can prevent or limit the adsorption of molecules at the interface between the surfactant and the discontinuous phase. This configuration can allow the droplet to serve, for example, as a reaction site for certain chemical and / or biological reactions. In another embodiment, aqueous droplets are stabilized in a fluorocarbon phase at least in part by the electrostatic attraction of two oppositely charged or polar components, one of which is at least partially soluble in the dispersed phase, the other at least partially soluble in the continuous phase. One component may provide collodial stability of the emulsion, and the other may prevent the adsorption of biomolecules at the interface between a component and the discontinous phase. Advantageously, surfactants and surfactant combinations of the invention may provide sufficient stabilization against coalescence of droplets, without interfering with processes that can be carried out inside the droplets.

A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.

The present invention relates to a hybrid vapor compression-absorption cooling or heating system and apparatus containing a refrigerant pair comprising at least one refrigerant and at least one ionic liquid. The present invention also provides for the performance of a hybrid vapor compression-absorption cycle that utilizes refrigerants and absorbents such as fluorocarbon gases in fluorinated ionic liquids. The present invention also provides a method of cooling by the execution of a hybrid vapor compression-absorption cycle using a refrigerant pair comprising at least one refrigerant and at least one ionic liquid. The present invention also provides a method of heating by the execution of a hybrid vapor compression-absorption cycle using a refrigerant pair comprising at least one refrigerant and at least one ionic liquid.

Techniques herein include methods for controllable lateral etching of dielectrics in polymerizing fluorocarbon plasmas. Methods can include dielectric stack etching that uses a mask trimming step as part of a silicon etching process. Using a fluorocarbon mixture for dielectric mask trimming provides several advantages, such as being straightforward to apply and providing additional flexibility to the process flow. Thus, techniques herein provide a method to correct or tune CDs on a hardmask. In general, this technique can include using a fluorine-based and a fluorocarbon-based, or fluorohydrocarbon-based, chemistry for creating a plasma, and controlling a ratio of the two chemistries. Without the hardmask trim method disclosed herein, if a hardmask CD is not on target, then a wafer is scrapped. With hard-mask trim capability in silicon etch as disclosed herein, a given CD can be re-targeted to eliminate wafer-scraps.

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

Hot-filament chemical vapor deposition has been used to deposit copolymer thin films consisting of fluorocarbon and siloxane groups. The presence of covalent bonds between the fluorocarbon and organosilicon moieties in the thin film has been confirmed by Infrared, X-ray Photoelectron (XPS) and solid-state 29Si, 19F, and 13C Nuclear Magnetic Resonance (NMR) spectroscopy. The film structure consists of chains with linear and cyclic siloxane groups and CF2 groups as repeat units.

The invention relates to a double-component polyurethane coating and a preparation method thereof. The coating comprises a component A and a component B, wherein the component A comprises hydroxyl-containing acrylic resin, fluorocarbon resin, polyester resin, non-nanoscale titanium white, nanometer titanium dioxide, nanometer silicon dioxide and various auxiliary agents; and the component B comprises polyisocyanate curing agent, solvent and moisture scavenger. The component A and the component B are mixed at the weight ratio of 4:1-5:1 to obtain the polyurethane coating. The coating has excellent wear resistance, scratch resistance and weather proofness, has favorable decoration, and is suitable for coating the surfaces of rapid trains, automobiles and the like which have higher requirements on decoration and physiochemical performance.

A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.

A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.

A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.

The present invention provides (1) a thermopolymerizable composition containing a thermopolymerizable compound having (meth)acrylate having a moiety consisting of oxyalkylene, fluorocarbon, oxyfluorocarbon and / or carbonate group within the molecule, an electrolyte salt, an organic polymerization initiator having no benzene ring, and a polymerization retarder having vinyl group within the molecule, (2) a solid electrolyte obtained by heat-curing the composition, (3) a primary battery, a secondary battery and an electric double-layer capacitor each using the solid electrolyte, and processes for manufacturing the same.

A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.