5054 results about "Fluorocarbon" patented technology

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluorocarbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluorocarbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.

A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.

The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves a fluorocarbon rich plasma pretreatment of interior surface of the pathway from the remote chamber to the surface deposits.

A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a fluorocarbon gas having the chemical formula CxHyFz, where x and z are equal to unity or greater and y is equal to 0 or greater.

A method of selectively removing fluorocarbon layers from overlying low-k dielectric material is described. These protective plasma treatments (PPT) are delicate alternatives to traditional post-etch treatments (PET). The method includes sequential exposure to (1) a local plasma formed from a silicon-fluorine precursor followed by (2) an exposure to plasma effluents formed in a remote plasma from a fluorine-containing precursor. The remote plasma etch (2) has been found to be highly selective of the residual material following the local plasma silicon-fluorine exposure. The sequential process (1)-(2) avoids exposing the low-k dielectric material to oxygen which would undesirably increase its dielectric constant.

Surfactants (e.g., fluorosurfactants) for stabilizing aqueous or hydrocarbon droplets in a fluorophilic continuous phase are presented. In some embodiments, fluorosurfactants include a fluorophilic tail soluble in a fluorophilic (e.g., fluorocarbon) continuous phase, and a headgroup soluble in either an aqueous phase or a lipophilic (e.g., hydrocarbon) phase. The combination of a fluorophilic tail and a headgroup may be chosen so as to create a surfactant with a suitable geometry for forming stabilized reverse emulsion droplets having a disperse aqueous or lipophilic phase in a continuous, fluorophilic phase. In some embodiments, the headgroup is preferably non-ionic and can prevent or limit the adsorption of molecules at the interface between the surfactant and the discontinuous phase. This configuration can allow the droplet to serve, for example, as a reaction site for certain chemical and / or biological reactions. In another embodiment, aqueous droplets are stabilized in a fluorocarbon phase at least in part by the electrostatic attraction of two oppositely charged or polar components, one of which is at least partially soluble in the dispersed phase, the other at least partially soluble in the continuous phase. One component may provide collodial stability of the emulsion, and the other may prevent the adsorption of biomolecules at the interface between a component and the discontinous phase. Advantageously, surfactants and surfactant combinations of the invention may provide sufficient stabilization against coalescence of droplets, without interfering with processes that can be carried out inside the droplets.

Disclosed herein are blowing agents comprising fluorocarbons and / or hydrofluorocarbons useful in foamable compositions. Also disclosed are methods for forming a foam comprising the aforementioned blowing agents.

The present invention relates to a hybrid vapor compression-absorption cooling or heating system and apparatus containing a refrigerant pair comprising at least one refrigerant and at least one ionic liquid. The present invention also provides for the performance of a hybrid vapor compression-absorption cycle that utilizes refrigerants and absorbents such as fluorocarbon gases in fluorinated ionic liquids. The present invention also provides a method of cooling by the execution of a hybrid vapor compression-absorption cycle using a refrigerant pair comprising at least one refrigerant and at least one ionic liquid. The present invention also provides a method of heating by the execution of a hybrid vapor compression-absorption cycle using a refrigerant pair comprising at least one refrigerant and at least one ionic liquid.

The present invention is directed to a microwell array chip made of silicon and having multiple microwells. Each microwell is used to store a single specimen organic cell. Each microwell is of a size and shape holding just one organic cell, and the interior surface of the microwells are coated with a fluorocarbon film.

The invention relates to a double-component polyurethane coating and a preparation method thereof. The coating comprises a component A and a component B, wherein the component A comprises hydroxyl-containing acrylic resin, fluorocarbon resin, polyester resin, non-nanoscale titanium white, nanometer titanium dioxide, nanometer silicon dioxide and various auxiliary agents; and the component B comprises polyisocyanate curing agent, solvent and moisture scavenger. The component A and the component B are mixed at the weight ratio of 4:1-5:1 to obtain the polyurethane coating. The coating has excellent wear resistance, scratch resistance and weather proofness, has favorable decoration, and is suitable for coating the surfaces of rapid trains, automobiles and the like which have higher requirements on decoration and physiochemical performance.

A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.

The present invention provides (1) a thermopolymerizable composition containing a thermopolymerizable compound having (meth)acrylate having a moiety consisting of oxyalkylene, fluorocarbon, oxyfluorocarbon and / or carbonate group within the molecule, an electrolyte salt, an organic polymerization initiator having no benzene ring, and a polymerization retarder having vinyl group within the molecule, (2) a solid electrolyte obtained by heat-curing the composition, (3) a primary battery, a secondary battery and an electric double-layer capacitor each using the solid electrolyte, and processes for manufacturing the same.

A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.