A technique for low-temperature
ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature
ion implantation. The apparatus may comprise a pre-chill
station located in proximity to an end
station in an
ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill
station. The apparatus may further comprise a loading
assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading
assembly and the cooling mechanism to coordinate loading a
wafer into the pre-chill station, cooling the
wafer down to a predetermined temperature range, and loading the cooled
wafer into the end station where the cooled wafer undergoes an
ion implantation process.