282results about How to "Efficient polishing" patented technology

Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.

An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as β-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

The normal pressure plasma polishing method is provided. The normal pressure plasma polishing method includes providing plasma gas and reaction gas in the volume ratio of 4-1000; and starting RF power source and increasing power gradually while controlling the reflected power to zero, with the initial effective power being 180-240 W, normal power being 400-1200 W, and maximum power being 1500 W. The present invention realizes super smooth surface machining by means of plasma chemical reaction at normal pressure, and has no need of vacuum chamber, low cost, wide application range, high machining efficiency, no surface damage and contamination, and high surface smoothness up to 1nm Ra.

It is provided a polishing pad of novel construction capable of controlling actively and efficiently a slurry flow during polishing a surface of a semiconductor substrate, such as a wafer, thus making it possible to precisely and stably performing a desired polishing process. Onto a surface of a pad substrate 12 of synthetic resin material, formed is a groove 16 extending approximately circumferentially. An inner circumferential wall surface 20 and an outer circumferential wall surface 22 are made parallel to each other and slant with respect to a center axis 18 of the pad substrate 12.

The present invention intends to provide a polishing pad and a multi-layer polishing pad (1) that can particularly effectively suppress scratch from occurring. The polishing pad (1) of the invention comprises at least one part selected from a groove (a) having at least one kind of shape selected from annular, lattice-like and spiral form on a polishing surface side, a concave portion (b) and a through hole (c). In the above, surface roughness of an inner surface of the part is 20 mu m or less and the polishing pad (1) is used for chemical mechanical polishing.

A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

A cleaning sheet has a disc-shaped substrate. First and second polishing layers are disposed over the substrate. The first polishing layer has a surface formed in a surface-roughened fashion to polish a tip section of each probe needle and has the function of removing adherents leading to inhibition of electrical conduction, which have been adhered to the tip of the needle in a coating or film form. The second polishing layer is a layer in which a large number of polishing grains are mixed into an elastic member and has the function of sticking the tip of the probe needle into the elastic member to remove foreign substances. The height of the surface of the second polishing layer is set so as to become identical to or slightly higher than that of the surface of the first polishing layer.

A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB / WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1),wherein m and n individually represent integers equal to or larger than one, provided that m+n≦50 is satisfied.

The invention relates to a two-dimensional ultrasonic vibration polishing device and a two-dimensional ultrasonic vibration polishing method, and belongs to the technical field of machine manufacturing. A two-dimensional ultrasonic vibration polishing tool is fastened to the z-axis of a machine tool by screws; a workpiece fixture is fastened to the x-axis of the machine tool by the screws; and the x-axis, the y-axis and the z-axis of the machine tool are fixedly connected with a machine tool main body after debugging. The two-dimensional ultrasonic vibration polishing device provides elliptical vibration in a polishing tangent plane, vibration signals of an x-direction ultrasonic vibrator and a y-direction ultrasonic vibrator are coupled to form two-dimensional vibration at a pivoting joint, and are output to a polishing head, the polishing head acquires a perfect instantaneous random motion track in a processing area, and motion composited by the vibration is polishing primary motion, so that a polishing force can be controlled to be stable on the premise that no polishing head rotates; the polishing head has high profile modeling capability, so that various complicated curved surfaces can be processed; deterministic polishing is realized; stable and uniform removal of a polishing material is realized; and high-efficiency and high-quality polishing can be realized simply by controlling the polishing force.

Component 3 is pressed onto a circuit board 4 so that their respective metal interconnects 5, 6 are in close contact with each other, and ultrasonic vibration is applied to the suction nozzle 14 holding the component 3. Friction is thereby generated between metal interconnects 5, 6 whereby the component 3 is bonded on circuit substrate. Suction nozzle 14 for handling components is made of stainless steel and has a working face 14a provided with a hardened layer 14b, or alternatively, suction nozzle 14 may have a suction head 14c having a working face 14a made of cemented carbide. Working face 14a of suction nozzle 14 is refined by polishing as required during the mounting operation.

The invention relates to the field of rice machining, in particular to a polishing grain type rice polishing machine. The polishing grain type rice polishing machine comprises a polishing barrel, a to-be-polished rice inlet, a polishing barrel hopper chamber and a polishing rice outlet, wherein the to-be-polished rice inlet is arranged above the polishing barrel, the polishing barrel hopper chamber is arranged below the polishing barrel, and the polishing rice outlet is arranged below the polishing barrel hopper chamber. The polishing chamber comprises an upper polishing chamber, coarse-grain polishing grains, a lower polishing chamber and fine-grain polishing grains, the upper polishing chamber and the lower polishing chamber are arranged on the upper portion and the lower portion of the polishing barrel respectively, and the coarse-grain polishing grains and the fine-grain polishing grains are filled in the upper polishing chamber and the lower polishing chamber respectively. The polishing grain type rice polishing machine can well polish rice uniformly, and broken rice rate is decreased.

It is provided a polishing pad of novel construction capable of controlling actively and efficiently a slurry flow during polishing a surface of a semiconductor substrate, such as a wafer, thus making it possible to precisely and stably performing a desired polishing process. Onto a surface of a pad substrate 12 of synthetic resin material, formed is a groove 16 extending approximately circumferentially. An inner circumferential wall surface 20 and an outer circumferential wall surface 22 are made parallel to each other and slant with respect to a center axis 18 of the pad substrate 12.

The invention discloses a magneto-rheological amorphous alloy polishing device which comprises a polishing groove, a fixed clamping device, a motor and a magnetic field generation device, wherein a magneto-rheological polishing agent is stored in the polishing groove; a to-be-polished work piece is fixed in the polishing agent by the fixed clamping device, so that a gap is formed between a polishing face of the work piece and the bottom of the polishing groove; the magnetic field generation device is disposed outside the polishing groove, and an external magnetic field generated by the device makes magnetic particles in the magneto-rheological polishing agent generate rheological effects, so that a magneto-rheological aggregate is formed between the work piece polishing face and the bottom of the polishing groove; and the motor is connected to the polishing groove and can drive the polishing groove to rotate or move back and forth. The polishing device disclosed by the invention has the advantages that a magneto-rheological polishing technology is applied in amorphous alloy polishing; the polishing device applicable to use is provided; an amorphous alloy product can be polished effectively, so that a surface with specular gloss can be obtained; the polishing technology is simple and can be implemented easily; and the polishing device is applicable to large-scale production.

Component (3) is pressed onto a circuit board (4) so that their respective metal interconnects (5), (6) are in close contact with each other, and ultrasonic vibration is applied to the suction nozzle (14) holding the component (3). Friction is thereby generated between metal interconnects (5), (6) whereby the component (3) is bonded on circuit substrate. Suction nozzle (14) for handling components is made of stainless steel and has a working face (14a) provided with a hardened layer (14b), or alternatively, suction nozzle (14) may have a suction head (14c) having a working face (14a) made of cemented carbide. Working face (14a) of suction nozzle (14) is refined by polishing as required during the mounting operation.