1285 results about "Chemical-mechanical planarization" patented technology

Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

When chemical mechanical planarization (CMP) is used to planarize a surface coexposing patterned features and dielectric fill, where patterned features and the fill are formed of materials having very different CMP removal rates or characteristics, the planarized surface may have excessively rough, dishing or recessing may take place, or one or more or the materials may be damaged. In structures in which planarity is important, these problems can be prevented by forming a capping layer on the patterned features, wherein the CMP removal rate of the material forming the capping layer is similar to the CMP removal rate of the dielectric fill.

The invention provides a method for improving uniformity of chemical-mechanical planarization process, comprising the steps of: forming features on a substrate; forming a first dielectric isolation layer between the features; planarizing the first dielectric isolation layer until the features are exposed, causing the first dielectric isolation layer between the features to have a recess depth; forming a second dielectric isolation layer on the features and the first dielectric isolation layer, whereby reducing the difference in height between the second dielectric isolation layer between the features and the second dielectric isolation layer on the top of the features; planarizing the second dielectric isolation layer until the features are exposed. According to the method for improving uniformity of chemical-mechanical planarization process of the invention, a dielectric isolation layer is formed again after grinding the dielectric isolation layer on the top of the features, such that the difference in height between the dielectric layer between the features and the dielectric layer on the top of the features is effectively reduced, and the recess of the features is compensated, the within-in-die uniformity is effectively improved.

A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.

A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and / or mixtures thereof, the stabilizer includes B, W and / or Al, and the catalyst is Cu, Fe, Mn, Ti, W and / or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and / or dielectrics.