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31 results about "Reaction bonded silicon carbide" patented technology

Reaction bonded silicon carbide, also known as siliconized silicon carbide or SiSiC, is a type of silicon carbide that is manufactured by a chemical reaction between porous carbon or graphite with molten silicon. Due to the left over traces of silicon, reaction bonded silicon carbide is often referred to as siliconized silicon carbide, or its abbreviation SiSiC.

Boron carbide composite bodies, and methods for making same

A composite body produced by a reactive infiltration process that possesses high mechanical strength, high hardness and high stiffness has applications in such diverse industries as precision equipment and ballistic armor. Specifically, the composite material features a boron carbide filler or reinforcement phase, and a silicon carbide matrix produced by the reactive infiltration of an infiltrant having a silicon component with a porous mass having a carbonaceous component. Potential deleterious reaction of the boron carbide with silicon during infiltration is suppressed by alloying or dissolving boron into the silicon prior to contact of the silicon infiltrant with the boron carbide. In a preferred embodiment of the invention related specifically to armor, good ballistic performance can be advanced by loading the porous mass or preform to be infiltrated to a high degree with one or more hard fillers such as boron carbide, and by limiting the size of the largest particles making up the mass. The instant reaction-bonded silicon carbide (RBSC) composite bodies surpass previous RBSC's as armor materials, and in this capacity approach the ballistic performance of current carbide armor ceramics but with potentially lower cost manufacturing methods, e.g., infiltration techniques.
Owner:II VI DELAWARE INC +1

Process for producing reaction bonded silicon carbide member

Disclosed is a process for producing a RBSiC member that has a large size and a complicated shape and possesses ceramic properties. The process is a Selective Laser Sintering process which includes providing a raw material containing silicon carbide particles and a binder, forming a thin layer of the raw material, and sintering the thin layer by irradiating a desired area in the thin layer with laser to form a sintered thin layer, repeating the step of forming the sintered thin layer to obtain a green body, impregnating the green body with a carbon source and curing the green body impregnated with the carbon source to give a cured body, carbonizing an organic compound component in the cured body to give a fired body, infiltrating the fired body with silicon, and subjecting the fired body to reaction sintering to give a RBSiC member, wherein the fired body contains 8% to 30% by weight of carbon.
Owner:TOTO LTD

Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer

The invention provides a preparation method of an RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer, and belongs to the technical field of thin film deposition. The method comprises the following steps: I, preparing filming conditions: mounting a Si target on a twin sputtering cathode of a filming machine, performing surface cleaning treatment on the RB-SiC substrate, fixing to a filming machine workpiece clamp, vacuuming the filming machine and roasting the RB-SiC substrate; II, performing surface treatment on the surface of the Si target of the sputtering cathode: introducing Ar gas into the sputtering cathode, and adjusting medium frequency power supply power to perform sputtering pre-treatment on the surface of the Si target; III, preparing the Si modification layer: increasing the medium frequency power supply power and Ar ventilation volume, and depositing the Si modification layer on the RB-SiC substrate by using a medium frequency magnetron sputtering technology. The preparation process is greatly simplified, the compactness of the film layer is high, the film is uniform, the polishing characteristic is obviously improved, and the optical quality of the surface of the polished substrate is greatly improved.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Boron carbide composite bodies, and methods for making same

A composite body produced by a reactive infiltration process that possesses high mechanical strength, high hardness and high stiffness has applications in such diverse industries as precision equipment and ballistic armor. Specifically, the composite material features a boron carbide filler or reinforcement phase, and a silicon carbide matrix produced by the reactive infiltration of an infiltrant having a silicon component with a porous mass having a carbonaceous component. Potential deleterious reaction of the boron carbide with silicon during infiltration is suppressed by alloying or dissolving boron into the silicon prior to contact of the silicon infiltrant with the boron carbide. In a preferred embodiment of the invention related specifically to armor, good ballistic performance can be advanced by loading the porous mass or preform to be infiltrated to a high degree with one or more hard fillers such as boron carbide, and by limiting the size of the largest particles making up the mass. The instant reaction-bonded silicon carbide (RBSC) composite bodies surpass previous RBSC's as armor materials, and in this capacity approach the ballistic performance of current carbide armor ceramics but with potentially lower cost manufacturing methods, e.g., infiltration techniques.
Owner:II VI DELAWARE INC
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