14229 results about "Crucible" patented technology

A method of manufacturing a single crystal ingot, and a single crystal ingot and a wafer manufactured thereby are provided. The method of manufacturing a single crystal ingot according to an embodiment includes forming a silicon melt in a crucible inside a chamber, preparing a seed crystal on the silicon melt, and growing a single crystal ingot from the silicon melt, and pressure of the chamber may be controlled in a range of 90 Torr to 500 Torr.

The present invention provides a system and method for uniform coating of a substrate at high deposition rates by evaporating a coating material in a vacuum chamber. The system includes an evaporator having a heating crucible for containing a coating material to be evaporated and a generally planar heat source disposed so as to heat a surface of a coating material contained in the heating crucible. Preferably, the heat source is manufactured from a ceramic or intermetallic material and includes a first layer defining a first set of openings and a second layer defining a second set of openings wherein the second layer overlies the first layer and is spaced apart therefrom. The first and second sets of openings allow the evaporated coating material to pass therethrough for dispersion of the coating material in a deposition zone defined by a containment shield disposed above the heat source.

A solder ball having a diameter of 1.2 mm or less, a dispersion of a diameter distribution of 5% or less and sphericity of 0.95 or more, an area ratio of the maximum dendrite being 80% or less of a cross section including a center of the solder ball, comprises a first additional element of 0.5-8 mass% of Ag and/or 0.1-3 mass % of Cu, and 0.006-10 mass %, in total, of at least one second additional element selected from the group consisting of Bi, Ge, Ni, P, Mn, Au, Pd, Pt, S, In and Sb, the balance being substantially Sn. The solder ball is produced by a uniform droplet-spraying method comprising the steps of vibrating a melt of a solder alloy in a crucible under pressure to force the melt to drop through orifices of the crucible; permitting the melt dropping through the orifices to become spherical droplets in a non-oxidizing gas atmosphere; and rapidly solidifying them.

An apparatus for depositing an organic layer and a method for controlling the heating unit thereof are provided. The apparatus includes a crucible positioned in a deposition chamber and containing materials for evaporation. The apparatus also includes a heating unit having first and second heat sources for heating the crucible. A housing isolates the heat emitted from the heating unit and an outer wall anchors the crucible. A nozzle sprays the materials evaporated from the crucible. The first and second heat sources are positioned on first and second sides of the crucible, respectively, and are independently controlled to minimize the time required to stabilize the deposition rate.

An electric heater is placed so as to cover an upper opening of a crucible. Then, a plurality of angle members are disposed along the side portions of the electric heater and are pressed and fixed by clamps. The clamp includes, at its bottom, a curved portion formed by bending a plate-like spring member into a convex shape, and generates pressing force between the curved portion and corresponding claw portions at the upper edge, thereby clamping the crucible.

The invention relates to the production of bulky monocrystalline metal or semi-metal bodies, in particular of a monocrystalline Si ingot, using the vertical gradient freeze (VGF) method by directional solidification of a melt in a melting crucible having a polygonal basic shape.

According to the invention, the entire bottom of the melting crucible is completely covered with a thin seed crystal plate made of the monocrystalline semi-metal or metal. Throughout the procedure, the bottom of the melting crucible is kept below the melting temperature of the semi-metal or metal in order to prevent melting of the seed crystal plate.

Monocrystalline ingots produced in this way are distinguished by a low average dislocation density of for example less than 10⁵ cm⁻², allowing the production of very efficient monocrystalline Si solar cells.

The invention relates to a three-dimensional rapid prototyping method and device based on pulse small hole droplet injection and belongs to the technical field of three-dimensional rapid prototyping. The three-dimensional rapid prototyping method is characterized in that a heater is used for heating a crucible until the metals in the crucible are in the molten state, a positive differential pressure value is set between the interior of the crucible and a vacuum chamber, simultaneously a piezoelectric ceramic driver applies certain pulse signals to piezoelectric ceramics to lead the piezoelectric ceramics to drive a transmission bar to generate longitudinal infinitesimal displacement, the infinitesimal displacement acts on the metal melt at the bottom of the crucible, tiny droplets are injected from small holes arranged at the bottom of the crucible, one droplet can be formed at the position of the small holes once the piezoelectric ceramics move for one time, size data of the droplets are timely analyzed through a photograph system, further the optimum parameter is obtained through adjustment; and the droplets fall to a moving three-dimensional motion platform to be deposited, and accordingly needed metal parts are formed through depositing. The three-dimensional rapid prototyping method and device based on pulse small hole droplet injection have the advantages that the pulse small holes inject to generate the metal droplets with uniform and controllable sizes, prototyped products are fine and uniform in microstructure, the prototyping process is strong in controllability, and the formed parts are high in accuracy.

The invention provides nitrogen-strengthened TiZrHfNb-based high-entropy alloy and a preparation method thereof. The effect of strengthening interstitial atoms is achieved through the microalloyed N element, and thus the tensile strength of the alloy is remarkably improved. The technique comprises the following steps that metal raw materials including Ti, Zr, Hf and Nb are accurately weighed according to a molar ratio after oxide skin of the metal raw materials is removed through a mechanical method, other adding elements are accurately weighed according to a molar ratio after mechanical skin removal or ultrasonic cleaning or acid pickling is conducted on the adding elements, and the element N is added in a nitride form; and the target alloy is smelted in a non-consumable vacuum electro-arc furnace or a cold crucible shower furnace, and the alloy is obtained through vacuum suction-casting or casting equipment. According to the nitrogen-strengthened TiZrHfNb-based high-entropy alloy and the preparation method thereof, by innovatively adding the element N, the tensile property of the high-entropy alloy is remarkably improved, and particularly the tensile strength of (TiZrHfNb) 98N2.0 high-entropy alloy approximates to 1300 Mpa; and meanwhile, the plastic elongation is 10% or over, and the comprehensive tensile property of the nitrogen-strengthened TiZrHfNb-based high-entropy alloy is remarkably superior to that of existing high-entropy alloy systems.

The invention discloses automatic test equipment for the volatiles of bituminous coal. The automatic test equipment comprises a bituminous coal heating module and a bituminous coal weighing module, wherein the bituminous coal heating module has the function of automatically opening/closing a furnace door, and the bituminous coal weighing module is capable of automatically weighing the masses of each crucible containing bituminous coal before and after an experiment; experimenters only need to place the crucibles on a crucible tray and do not need to participate in the later experiment process. The invention discloses automatic test equipment which is simple and compact in structure, convenient to operate, capable of automatically weighing the masses of each crucible before and after the experiment, and capable of carrying out a volatile experiment on 20 crucibles simultaneously.

The invention discloses a stirring device with a transmission type multi-crucible, which is characterized that a control mechanism is fixed on a bottom plate, a lifting device, an inclination device, a heterodromous rotation device and a crucible tray are fixed on the bottom plate. The transmission driven crucible and the heterodromous rotation device capable of heterodromously rotating a mixing wire are arranged on the upper part of the lifting device, the crucible tray capable of placing the multi-crucible is placed on the lower part of the lifting device, the inclination device fixed on the fixed pedestal is communicated with the heterodromous rotation device. The stirring device of the invention has the advantages of simple and compact structure, and simple operation, and is capable of effectively solving the problem for batch producing anthracite samples, and increasing the production number and the quality of the anthracite caking index samples.

A deposition apparatus includes a vacuum chamber and a heating crucible. A substrate, on which deposition films are formed, is installed in the vacuum chamber. The heating crucible is installed opposite to the substrate so as to vaporize an organic compound. The heating crucible includes a main body and an inner plate. The main body includes a space which contains the organic compound and a nozzle through which the organic compound that is vaporized is discharged. The inner plate is installed within the main body and includes at least one opening formed around an edge of an area facing the nozzle, so as to transmit the vaporized organic compound.

The invention discloses a device for preparing semi-solid metal and alloy slurry, which mainly comprises an electromagnetic stirrer, an insulating layer, an external cooling controller, a valve, a draft tube, a preparation crucible, an insulating crucible cover, a standing crucible, a melting crucible and a thermocouple. The middle part of the preparation crucible is provided with an internal cooling controller, and the outer wall of the internal cooling controller forms a clearance with the inner wall of the preparation crucible. The device can be connected with a press-casting machine, an extruder, a continuous casting machine and a forging machine, wherein the press-casting machine consists of a press-casting fixed die, a press-casting movable die, an injection chamber and a punch head; the extruder consists of a right extrusion die profile, a left extrusion die profile, an extrusion cylinder and an extrusion rod; the continuous casting machine consists of a tundish, a crystallizer, a cooling water nozzle and a traction mechanism; and the forging machine consists of a forging die cavity and a forging die. The device has the advantages that the device has simple and compact structure, low investment cost and strong practicability; the temperature field and tissue of the prepared slurry are distributed evenly; the semi-solid alloy slurry is pure, does not bubble and has good self cleanness; and the device can produce large-specification semi-solid slurry or blank, and is quite suitable for the preparation and formation of the semi-solid slurry or the blank.

The present invention is preparation process of phosphor powder for blue light excited white light LED. The phosphor powder has the chemical formula of (R3-x-yCexLny)A5O12, where, R is at least one of Y, La, Gd, Tb, Lu and Sc; Ln is at least one of Pr, Dy, Nd, Sm, Dy and Bi; A is at least one of B, Al, Ga, Si, Mn and Mg; x is 0.01-1.2; and y is 0-0.2. The preparation process of the phosphor powder includes mixing oxides, hydroxides or salts corresponding to the elements in the formula and proper amount of flux; setting the mixture into the inner crucible with an unsealed cover, setting graphite or carbon between the outer crucible and the inner crucible, and covering the outer crucible with sealing cover; igniting inside a high temperature furnace at 1350-1700 deg.c, for 1-8 hr; cooling, crushing, washing and stoving to obtain the phosphor powder.

In a crystal growth method, an enclosed growth crucible is provided inside of a growth chamber. The growth crucible has polycrystalline source material and a seed crystal disposed in spaced relation therein. The interior of the growth crucible is heated whereupon a temperature gradient forms between the source material and the seed crystal. The temperature gradient is sufficient to cause the source material to sublimate and be transported to the seed crystal where it precipitates on the seed crystal. A gas mixture is caused to flow into the growth crucible and between the polycrystalline source material and an interior surface of the growth crucible. The gas mixture reacts with an unwanted element in the body of the growth crucible to form a gaseous byproduct which then flows through the body of the growth crucible to the exterior of the growth crucible.

A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to establish a temperature gradient between the source material and the seed with the seed at a higher temperature than the source material such that the outer layer of the seed is evaporated, thereby cleaning the seed of contaminants and removing any damage to the seed incurred during seed preparation. Thereafter, the temperature gradient between the source material and the seed is inverted so that the source material is sublimed and deposited on the seed, thereby growing a bulk single crystal of AlN.

For lasting stable vapor deposition of a material for a long term, the present invention provides the vapor deposition crucible comprising an evaporation chamber defined by a container part of the material and an orifice plate controlling vapor pressure of the material evaporated therein, and a pressure-controlling chamber defined in a space between the orifice plate and a discharge plate through which the material is discharged to the exterior of the vapor deposition crucible. A protrusion extending outwardly from the pressure-controlling chamber and having a second opening on its distal end may be provided on the upper surface of the discharge plate, and a heater may be provided on the side surface of the protrusion to oppose the side surface of the protrusion with an insulation mechanism provided at a position higher than the heater but lower than the second opening. In the vapor deposition crucible, temperature of the pressure-controlling chamber may be kept higher than that of the evaporation chamber by the other heaters.

The invention relates to a method and device for preparing a silicon steel sheet in a static magnetic field with a powder sintering method. The specific process of the method consists of the following steps of: mixing Fe-Si powder; rolling into a plate blank; and sintering a Fe-6.5 weight percent Si green compact in a static magnetic field. In the method, 6.5 percent by weight of Si high-silicon steel with high density is obtained by using the influence of the magnetic field on the sintering densification and orientation process of a Fe-6.5 weight percent Si powder green compact, and an easily-magnetized axis is oriented along the magnetic field. An atmosphere/vacuum sintering device in a static magnetic field consists of a temperature control device, an exhaust pipe, a thermocouple, a heating element, a corundum crucible, a refractory fiber, a support block, a heat insulating block, a water-cooled bush, a static magnetic field generating device, a sealed corundum pipe, an inert gas inlet valve, a vacuum pumping valve, a Fe-6.5weight percent Si green compact, a thin corundum plate interlayer and a fixing molybdenum wire. The 6.5 percent Si silicon steel sheet prepared with the method has the advantages of near net molding, superior magnetic property, high orientation degree and the like, and has a remarkable industrial application prospect.

The invention discloses a method for producing a voltage-bearing aluminum alloy tank body of an ultra-high voltage switch by a V-process, comprising the following steps: model making, thin film heating, thin film shaping (film absorbing), coating spraying, sandbox placing, ram-jolting by adding sand , back film covering, film loosening, core setting, box folding, pouring, removing box and shaking out. After the process is improved, an intermediate frequency furnace is utilized to melt and a crucible heat preserving furnace is utilized to modify and refine. When melting in the intermediate frequency furnace, microelements such as tombarthite and the like are replenished and a new non-stirring melting and refining technology is adopted so as to reduce oxide inclusion content in alloy liquid. Modification and refining treatment in the crucible heat preserving furnace ensures high purity degree and high component precision of aluminum liquid, and using pure aluminum alloy liquid can increase the ratio of acquiring qualified pressure-proof tank body foundry products.

The invention relates to a crucible coating, in particular to a ceramic crucible coating used in producing polycrystalline silicon cast ingot, and also relates to a preparation method of ceramic crucible coating used for polycrystalline silicon cast ingot. The solid content in the formulation of the crucible coating used for polycrystalline silicon cast ingot comprises 80-99% of silicon nitride and 1-20% of filming agent containing silicon element by weight percentage; after sintering the total oxygen content is 0.2-4.9% by weight percentage. The invention aims at providing a crucible coating used for polycrystalline silicon cast ingot and a preparation method; in the invention, a technique proposal in which the coating contains lower oxygen content is adopted as far as possible, so that potential pollution can be reduced, and meanwhile filming and spraying technologies are adopted to guarantee the stability of the silicon nitride layer and the quality of the silicon ingot in the use process of the crucible.