1054results about How to "Narrow distribution" patented technology

A porous monocomponent nonwoven web contains a bimodal mass fraction / fiber size mixture of intermingled continuous microfibers and larger size fibers of the same polymeric composition. There are at least five times as many microfibers as larger size fibers, and a histogram of the mass fraction of fibers vs. fiber size exhibits a larger size fiber mode greater than 10 μm. The web may be made by flowing fiber-forming material through a die cavity having larger size orifices and at least five times as many smaller size orifices to form filaments, attenuating the filaments into fibers and collecting the attenuated fibers to form the nonwoven web. The web is especially well suited to the manufacture of self-supporting three dimensional articles such as molded cup-shaped respirators and pleated air filters.

In a nonvolatile floating-gate semiconductor memory device, a word line voltage supply circuit is configured to be able to apply gate voltages to the same memory cells such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time. At least one of the word line voltage supply circuit and the bit line voltage supply circuit is set to be able to apply a voltage to the same memory cells for a longer application period at the first time than at and after the second time. With this configuration, the threshold voltage distribution of the memory cells is controlled to be narrow.

A solder ball having a diameter of 1.2 mm or less, a dispersion of a diameter distribution of 5% or less and sphericity of 0.95 or more, an area ratio of the maximum dendrite being 80% or less of a cross section including a center of the solder ball, comprises a first additional element of 0.5-8 mass % of Ag and / or 0.1-3 mass % of Cu, and 0.006-10 mass %, in total, of at least one second additional element selected from the group consisting of Bi, Ge, Ni, P, Mn, Au, Pd, Pt, S, In and Sb, the balance being substantially Sn. The solder ball is produced by a uniform droplet-spraying method comprising the steps of vibrating a melt of a solder alloy in a crucible under pressure to force the melt to drop through orifices of the crucible; permitting the melt dropping through the orifices to become spherical droplets in a non-oxidizing gas atmosphere; and rapidly solidifying them.

The present application relates to methods for the functionalization of immunoglobulins, in particular with drugs. Also disclosed herein are linking reagents, functionalized antibodies, pharmaceutical compositions, and method of treating disease and / or conditions.

The present invention relates to a flow cytometer, comprising a light source, a light beam shaping module for collimating and converging a light beam emitted from the light source so that the light beam irradiates samples to be detected, a sample generation unit, which comprises a gas-liquid transmission controlling module and a flow chamber that are interconnected, and a signal processing unit, for collecting, photoelectrically converting and analyzing the scattered beam emitted from the flow chamber. The light beam shaping module comprises a first cylindrical lens and a second cylindrical lens for respectively converging the light beams in two directions. In the present invention, the spot converged at the cell-interrogation zone of the flow chamber is flattened to avoid instability of the fluid which in turn leads to instability of the excited optical signal, and consequently the stability and reliability of the system are improved.

A light source device having a light guide (3) for guiding light emitted from a primary light source and emitting light obliquely from a light emission face (33) thereof, and a light deflecting device (4) disposed so as to be adjacent to the light emission face. Plural elongated prisms are arranged in parallel to one another at a light incident surface (41) of the light deflecting device. Virtual elongated prisms (I) each having a vertical angle θ of 50 to 70° arranged in the same arrangement pitch as the elongated prisms are assumed so that the peak emission light in the light emission distribution of light emitted from the light emission face is incident on one virtual prism face of the virtual elongated prism, internally totally reflected by another virtual prism face and then emitted in a desired direction from a light emission surface (42) of the light deflecting device. A prism face of each elongated prism at the far side from the primary light source is designed to have a convex surface shape with respect to the shape of the virtual elongated prism. The value (r / P) of the radius of curvature r normalized by the arrangement pitch P is equal to 7 to 30, and the ratio (d / P) of the maximum distance between the convex-surface-shaped prism face of the elongated prism and the virtual prism face to the arrangement pitch P is equal to 0.05 to 5%.

Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state and setting a counter to zero. Then the method includes applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value and adding one to the counter. This step is repeated until either the counter reaches a predetermined number or until the high resistance state resistance value is greater than the lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value and adding one to the counter. The reverse resetting voltage pulse has a second polarity being opposite the first polarity. This step is repeated until either the counter reaches a predetermined number or until all the high resistance state resistance value is less than the upper resistance limit value.