28005 results about "Irradiation" patented technology

A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge / pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

A method for managing UV irradiation for curing a semiconductor substrate, includes: passing UV light through a transmission glass window provided in a chamber for curing a semiconductor substrate placed in the chamber; monitoring an illuminance upstream of the transmission glass window and an illuminance downstream of the transmission glass window; determining a timing and / or duration of cleaning of the transmission glass window, a timing of replacing the transmission glass window, a timing of replacing a UV lamp, and / or an output of the UV light based on the monitored illuminances.

A method of cleaning a UV irradiation chamber includes steps of: (i) after completion of irradiating a substrate with UV light transmitted through an optical transmitted window provided in the UV irradiation chamber, generating radical species of a cleaning gas outside the UV irradiation chamber; and (ii) introducing the radical species from the outside of the UV irradiation chamber into the UV irradiation chamber, thereby cleaning the optical transmitted window.

A method for managing UV irradiation for treating substrates in the course of treating multiple substrates consecutively with UV light, includes: exposing a first UV sensor to the UV light at first intervals to measure illumination intensity of the UV light so as to adjust the illumination intensity to a desired level based on the measured illumination intensity; and exposing a second UV sensor to the UV light at second intervals to measure illumination intensity of the UV light so as to calibrate the first UV sensor by equalizing the illumination intensity measured by the first UV sensor substantially with the illumination intensity measured by the second UV sensor, wherein each second interval is longer than each first interval.

Compositions for use in the manufacture of three-dimensional objects including compositions for use as a support and / or release material in the manufacture of the three-dimensional objects are provided. There is thus provided, in accordance with an embodiment of the present invention, a composition suitable for building a three-dimensional object. The compositions may include, inter alia, a curable component, having a functional group, wherein if the functional group is a polymerizable reactive functional group, then the functional group is a (meth)acrylic functional group, a photo-initiator, a surface-active agent and a stabilizer; wherein said composition has a first viscosity of about 50–500 cps at a first temperature, wherein said first temperature is ambient temperature, and a second viscosity lower than 20 cps at a second temperature wherein said second temperature is higher than said first temperature, wherein, after curing, the composition results in a solid form. There is thus provided, in accordance with another embodiment of the present invention, a composition suitable for support in building a three-dimensional object. The compositions may include, inter alia: a non-curable component, a curable component, wherein the non-curable component is not reactive with said curable component, a surface-active agent and a stabilizer; wherein said composition has a first viscosity of about 20–500 cps at a first temperature, wherein said first temperature is ambient temperature, and a second viscosity lower than 20 cps at a second temperature wherein said second temperature is higher than said first temperature, wherein, after irradiation, the composition results in a solid, a semi-solid or liquid material. A method for the preparation of a three-dimensional object by three-dimensional printing is provided in accordance with embodiments of the present invention. Embodiments of the present invention further provide a three-dimensional object prepared according to the methods of the invention.

The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.

An optical system for examination of biological tissue includes a light source, a light detector, optics and electronics. The light source generates a light beam, transmitted to the biological tissue, spaced apart from the source. The light detector is located away (i.e., in a non-contact position) from the examined biological tissue and is constructed to detect light that has migrated in the examined tissue. The electronics controls the light source and the light detector, and a system separates the reflected photons (e.g., directly reflected or scattered from the surface or superficial photons) from the photons that have migrated in the examined tissue. The system prevents detection of the “noise” photons by the light detector or, after detection, eliminates the “noise” photons in the detected optical data used for tissue examination.

A method of producing an object by successive solidification of layers of a powder material is disclosed. The method provides a preformed base plate having a metal plate with a solidified layer of a powder material formed thereon. Then, successive layers of said powder material are applied and solidified on the solidified layer of the base plate to form the object. In further detail, the method for produces a three-dimensional by providing a support and a preformed base plate having an upper surface for supporting the object. The base plate is removably attached to the support. Means are provided for adjusting the elevation of said upper surface. A layer of the powder material is applied to the upper surface of the base plate. The powder material is solidified at points corresponding to a cross-section of the object by irradiation with electromagnetic or particle radiation. Then, the applying and solidifying steps are repeated for completing the object.

A method and apparatus for treatment of the skin or other biologic tissue includes the ability to subject said skin or other tissue to temperature modulation and radiation, simultaneously. The apparatus that delivers warm or cold material to the treatment site to effect this modulation of temperature may be attached to the apparatus that delivers radiation or it may be a separate entity, that could be utilized with a variety of radiation generating equipment.

A method of forming a mask pattern includes a first pattern forming step of etching an anti-reflection coating film by using as a mask a first line portion made up of a photo resist film formed on the anti-reflection film to form a pattern including a second line portion made up of the photo resist film and the anti-reflection film; an irradiation step of irradiating the photo resist film with electrons; a silicon oxide film forming step to cover the second line portion isotropically; and an etch back step of etching back the silicon oxide film such that the silicon oxide film is removed from the top of the second line portion as sidewalls of the second line portion. The method further includes a second pattern forming step of ashing the second line portion to form a mask pattern including a third line portion made up of the silicon oxide film and remains.

A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation layer (120) made of such a material as amorphous silicon is provided on a substrate (100) which allows passage of laser. A thin film device (140) such as TFTs are formed on the substrate (100). Further, a second separation layer (160) such as a hot-melt adhesive layer is formed on the thin film devices (140), and a primary destination-of-transfer part (180) is mounted thereon. The bonding strength of the first separation layer is weakened by irradiation with light, and the substrate (100) is removed. Thus, the thin film device (140) is transferred to the primary destination-of-transfer part. Then, a secondary destination-of-transfer part (200) is attached onto the bottom of an exposed part of the thin film device (140) via an adhesive layer (190). Thereafter, the bonding strength of the second separation layer is weakened by such means as thermal fusion, and the primary destination-of-transfer part is removed. In this manner, the thin film device (140) can be transferred to the secondary destination-of-transfer part (200) while maintaining layering relationship with respect to the substrate (100).

A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A / W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A / W for longer wavelengths, e.g., up to about 3.5 microns.