31889 results about "Microwave" patented technology

A medical instrument sterilization method is disclosed, which characterizes in following process: pending medical instrument for sterilization treatment being placed in a closed container, then being vacuum pumped, the vacuum pressure of the container being controlled between 1 Pa to 1500 Pa, air and / or oxygen and / or inert gases are charged to closed container and the vacuum pressure being between 1 Pa to 1500 Pa, microwave is fed, the favorable power of which should make the gas charged into the container to generate ionization, the microwave be cut after the sterilization, then air being charged to release vacuum to finish the whole process.

An arrangement is provided for charging a charge storage device by placing the charge storage device in an RF or microwave radiation field. One or more antennas which receive the radiated RF electromagnetic field are placed on the charge storage device. Rectifiers connected to the antennas rectify the received RF electromagnetic field an produce a DC output current which is used to charge the charge storage device. The charge storage device may be a battery or a capacitor and may form an integral part of an electronic device. The same RF field that charges the charge storage device can also be employed to communicate data to transponders which may be associated with computing devices.

In the present invention, Ar gas for plasma generation is supplied to a plasma generation region and butyne gas having a multiple bond is supplied to a film formation region at a substrate side as source gas, inside of a process vessel in an insulating film forming apparatus. A microwave is supplied inside of the process vessel from a radial line slot antenna under a state in which a bias voltage is not applied to a substrate W. A plasma is thereby generated in the plasma generation region, the butyne gas in the film formation region is activated by the plasma, and an insulating film of amorphous carbon is formed on the substrate.

In a radio access network (24) a femto radio base station (28f) comprises a resident receiver (54) which acquires system information broadcast in a radio access network (24). At least part of the system information is used for building, at the femto radio base station (28f), a neighbor data structure (59) comprising information for neighboring cells. The neighbor data structure (59) is then used for building a neighbor list. The neighbor list is subsequently transmitted from the femto radio base station (28f) to a user equipment unit (30) served by the femto radio base station (28f). In some example embodiments and modes, the femto radio base station (28f) reports the neighbor data structure to a network node (26, 100) other than the femto radio base station. The other node (26, 100) uses the neighbor data structure for building the neighbor list at the other node. In some example embodiments and modes, acquisition of the system information comprises scanning a surrounding macro coverage area of the femto radio base station for obtaining cell identity information for detected cells. In other example embodiments and modes, the acquisition of the system information can additionally comprise camping on a macro cell and using / consulting at least one system information block in the camped-on macro cell is consulted / used for obtaining information about at least one neighboring cell.

A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge / pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

Methods, systems, and kits for treating breast tissue rely on transferring energy to or from cells lining an individual breast duct. Energy can be introduced into the breast duct, e.g., by filling the duct with an electrically conductive medium and applying radiofrequency energy to the medium. Other energy forms could also be used, such as light, ultrasound, radiation, microwave energy, heat, cold, direct current, and the like. By treating individual breast ducts, cancerous and pre-cancerous conditions originating in the duct can be effectively treated.

Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.

To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber.

A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.

The present invention is an industrial waste water microwave electrodeless ultraviolet photocatalysis-dual membrane separation coupling treatment device, the device mainly consists of a reactor (1), a membrane separation system (2), a microwave electrodeless ultraviolet light source system (4), an aeration system, and an ozone tail gas decomposition device (7) connected to the reactor, and an inlet and outlet water system, wherein: the upper and lower parts of the reactor are respectively the reaction zone and the aeration zone, which are separated by a water distribution plate (5); the membrane separation system The microwave electrodeless ultraviolet light source system is located in the reaction zone and is separated by a corrugated partition (3); the aeration system is composed of a microporous aeration head (6) and a blower (8), and the microporous aeration head is located in the aeration At the bottom of the zone, the blower sends air to the aeration zone through the air duct. The invention has the characteristics of high reaction rate, complete degradation of organic matter, long-term operation and the like, and has strong operability and high safety. It is suitable for the treatment of refractory organic industrial wastewater, and it is also suitable for sterilization and disinfection in the field of water supply.

To provide a deposition method and a deposition apparatus, in which deposition can be performed under a low temperature and a substrate does not suffer from charge-up damage, and a semiconductor device produced thereby. The deposition method is that reactive gas is made to pass through communication holes and guided toward downstream of the communication holes after the gas is exposed to surface wave of microwave, and it is reacted with silicon compound gas to deposit a silicon-containing film on a substrate arranged in the downstream.

A disclosed a plasma process apparatus includes a process chamber that houses a substrate subjected to a predetermined plasma process and may be evacuated to a reduced pressure; a microwave generator that generates microwaves for generating plasma; a waveguide pipe that transmits the microwaves from the microwave generator to the process chamber; a waveguide pipe / coaxial pipe converter connected to one end of the waveguide pipe; and a coaxial pipe that forms a line through which the microwaves are transmitted from the waveguide pipe-coaxial pipe converter to the process chamber. An inner conductive body of the coaxial pipe has a hollow portion; and a first process gas supplying portion that supplies a process gas into the process chamber through the hollow portion of the inner conductive body of the coaxial pipe.

An apparatus and method that generates plasma using a microwave radiation supply. The plasma is used to treat a surface of a workpiece at approximately atmospheric pressure. Plasma excites a working gas to create an excited gaseous species without degradation from undue heat caused by the plasma. The gaseous species exit an outlet of the apparatus to treat the surface of a workpiece when the outlet is juxtaposed with the workpiece.

A wireless power transfer system includes: a plurality of power transmitters, each of which transmits a microwave; and a rectenna base station which receives the microwave to generate power. The rectenna base station includes: a rectenna; and control section which specifies an identification code for identifying each power transmitter and generates a command signal to change a phase of the power transmitter specified by identification code so as to increase a power value received at the rectenna. Each of the power transmitters comprises: a plurality of transmission antenna elements, each of which transmits the microwave to the rectenna base station; and a phase controller which makes phase change of the microwave based on the command signal from the phase monitor and control section of the rectenna base station if the identification code matches a stored identification code.

Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various embodiments, the methods may be used to remove hydroxyl bonds, increase film density, reduce or eliminate seams and voids, and optimize film properties such as dielectric constant, refractive index and stress for particular applications. In certain embodiments, the methods are used to form conformal films deposited by a technique such as PDL. The methods may be used in applications requiring low thermal budgets.

An orthogonal electrical coupling relies on electromagnetic coupling for the inner connection, as opposed to direct contact between conductors. A conductor on one of the lines is connected to a ground plane which is adjacent to a resonant slot. Microwave energy is coupled to the slot, thereby exciting the slot. A second conductor is on the opposite side of the ground plane from the first conductor. Microwave energy from the excited resonant slot passes to the second conductor, thereby allowing contactless interconnection between the first conductor and the second conductor. The coupling may emphasize certain modes of propagation relative to other possible modes of propagation. Specifically, the ground plane and slot may be enclosed in a cavity of a size such that the cavity does not support any natural mode propagation inside the cavity. Instead, the coupling may have a cavity in which a transverse electromagnetic (TEM) mode is propagated.

At a frame 26 in a microwave plasma processing apparatus 100, numerous horizontal spray gas nozzles 27 formed therein injection holes A and numerous vertical gas nozzles 28 formed therein injection holes B are fixed. A first gas supply means 50 injects argon gas through the injection holes A into an area near each dielectric parts 31a. A second gas supply means 55 injects silane gas and hydrogen gas through the injection holes B into a position at which the gases do not become over-dissociated. The gases injected as described above are raised to plasma with a microwave transmitted through each dielectric parts 31a. Since the vertical gas nozzles 28 are mounted at positions at which they do not block the flow of plasma traveling toward a substrate G, ions and electrons do not collide with the vertical gas nozzles 28 readily.

Methods, devices and systems for treating patent foramen ovale (PFO) involve advancing a catheter device to a position in a heart for treating a PFO, bringing tissues adjacent the PFO at least partially together, and applying energy to the tissues to substantially close the PFO acutely. Catheter devices generally include an elongate catheter body, at least one tissue apposition member at or near the distal end for bringing the tissues together, and at least one energy transmission member at or near the distal end for applying energy to the tissues. In some embodiments, the tissue apposition member(s) also act as the energy transmission member(s). Applied energy may be monoploar or bipolar radiofrequency energy or any other suitable energy, such as laser, microwave, ultrasound, resistive heating or the like.

A catheter includes a cryoablation tip with an electrically-driven ablation assembly for heating tissue. The cryoablation tip may be implemented with a cooling chamber through which a controllably injected coolant circulates to lower the tip temperature, and having an RF electrode at its distal end. The RF electrode may be operated to warm cryogenically-cooled tissue, or the coolant may be controlled to conductively cool the tissue in coordination with an RF treatment regimen, allowing greater versatility of operation and enhancing the lesion size, speed or placement of multi-lesion treatment or single lesion re-treatment cycles. In one embodiment a microwave energy source operates at a frequency to extend beyond the thermal conduction depth, or to penetrate the cryogenic ice ball and be absorbed in tissue beyond an ice boundary, thus extending the depth and / or width of a single treatment locus. In another embodiment, the cooling and the application of RF energy are both controlled to position the ablation region away from the surface contacted by the electrode, for example to leave surface tissue unharmed while ablating at depth or to provide an ablation band of greater uniformity with increasing depth. The driver or RF energy source may supply microwave energy at a frequency effective to penetrate the ice ball which develops on a cryocatheter, and different frequencies may be selected for preferential absorption in a layer of defined thickness at depth in the nearby tissue. The catheter may operate between 70 and minus 70 degrees Celsius for different tissue applications, such as angioplasty, cardiac ablation and tissue remodeling, and may preset the temperature of the tip or adjacent tissue, and otherwise overlay or delay the two different profiles to tailor the shape or position where ablation occurs or to speed up a treatment cycle.

A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and / or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

An interconnect module and a method of manufacturing the same is described comprising: a substrate, an interconnect section formed on the substrate, and a variable passive device section formed on the substrate located laterally adjacent to the interconnect section. The interconnect section has at least two metal interconnect layers separated by a dielectric layer and the variable passive device has at least one moveable element. The moveable element is formed from a metal layer which is formed from the same material and at the same time as one of the two interconnect layers. The moveable element is formed on the dielectric layer and is released by local removal of the dielectric layer. Additional interconnect layers and intermediate dielectric layers may be added.

A process of activated cracking of high molecular organic waste material which includes confining the organic waste material in a reactor space as a mixture with a pulverized electrically conducting material (sensitizer) and / or catalysts and / or "upgrading agents" and treating this mixture by microwave or radio frequency electro-magnetic radiation. Organic waste materials include hydrocarbons or their derivatives, polymers or plastic materials and shredded rubber. The shredded rubber can be the source of the sensitizer and / or catalyst material as it is rich in carbon and other metallic species. This sensitizer can also consist of pulverized coke or pyrolytically carbonized organic feedstock and / or highly dispersed metals and / or other inorganic materials with high dielectric loss which absorb microwave or radio frequency energy.