3917 results about "High productivity" patented technology

The present invention relates to a tubular suture reinforcement material suitable for use in automatic suturing devices that are widely used in surgical operations, etc. More specifically, the present invention relates to a tubular suture reinforcement material with which a tubular shape is easily obtained to thereby increase its productivity, and removal of thread is easily achieved. The present invention provides a tubular suture reinforcement material for an automatic suturing device formed by stacking two sheet-like materials and sewing together both ends of the two sheet-like materials using two chain stitches (intralooping stitches) each thread end at each sewing end is suitably extended, and the thread end is passed through an anterior loop continuous to the thread end, thereby preventing the thread from unraveling.

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

A chip stack package is manufactured at a wafer level by forming connection vias in the scribe lanes adjacent the chips and connecting the device chip pads to the connection vias using rerouting lines. A lower chip is then attached and connected to a substrate, which may be a test wafer, and an upper chip is attached and connected to the lower chip, the electrical connections being achieved through their respective connection vias. In addition to the connection vias, the chip stack package may include connection bumps formed between vertically adjacent chips and / or the lower chip and the substrate. The preferred substrate is a test wafer that allows the attached chips to be tested, and replaced if faulty, thereby ensuring that each layer of stacked chips includes only “known-good die” before the next layer of chips is attached thereby increasing the production rate and improving the yield.

Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.

The present invention relates to a tubular suture reinforcement material suitable for use in automatic suturing devices that are widely used in surgical operations, etc. More specifically, the present invention relates to a tubular suture reinforcement material with which a tubular shape is easily obtained to thereby increase its productivity, and removal of thread is easily achieved. The present invention aims to overcome drawbacks such that sheet-like materials joined by the conventional temporary adhesion easily separate from each other, and the tubular suture reinforcement material manufactured using a running stitch requires a lot of time and skill, and removal of the thread is difficult depending on the kind of sheet-like material, sewing pitch, etc. More specifically, the present invention relates to a tubular suture reinforcement material for an automatic suturing device, wherein both ends of one or two sheet-like materials are sewed using a chain stitch (intralooping stitch) with a single thread to form a tubular shape, and one or two thread ends at one or two sewing ends are suitably extended.

The present invention provides methods for a robust production of isoprenoids via one or more biosynthetic pathways. The invention also provides nucleic acids, enzymes, expression vectors, and genetically modified host cells for carrying out the subject methods. The invention also provides fermentation methods for high productivity of isoprenoids from genetically modified host cells.

There is disclosed a method for forming micro patterns in a semiconductor integrated circuit device with high productivity and high accuracy. A photolithography having high throughput and electron beam lithography using a reticle and having relatively high throughput and high resolution are selectively used so as to obtain highest throughput while satisfying accuracy and resolution required for each product / layer. In the case of using the electron beam lithography, a non-complementary reticle and a complementary reticle are selectively used so as to obtain highest throughput while satisfying required accuracy and resolution. Thus, productivity and integration can be improved for the semiconductor integrated circuit device.

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used.

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used.

Since a widely applicable high quality plasma display equipped with a phosphor layer suitable as a highly precise plasma display can be produced continuously at a high productivity level, an industrially advantageous method and apparatus for producing a plasma display can be provided. The highly precise plasma display obtained in the present invention can be widely used in the display field, for example, for wall mounted television sets, information displays, etc. The method for producing a plasma display of the present invention comprises the step of continuously applying a phosphor paste containing a phosphor powder and an organic compound onto a substrate with a plurality of barrier ribs from a paste applicator with a plurality of outlet holes. Furthermore, the present invention comprises the steps of coating a substrate with a plurality of barrier ribs, with three phosphor pastes respectively containing a phosphor powder emitting light of red, green or blue, as stripes in the spaces between the respectively adjacent barrier ribs on the substrate, from a paste applicator with outlet holes, and heating to form a phosphor layer. Moreover, the apparatus for producing a plasma display of the present invention comprises a table for fixing a substrate with a plurality of barrier ribs, a paste applicator with a plurality of outlet holes to face the barrier ribs of the substrate, a supply means for supplying a phosphor paste to the paste applicator, and a moving means for three-dimensionally moving the table and the paste applicator relatively each other.

A method for preparing a rare earth permanent magnet material comprising the steps of:disposing a powder comprising one or more members selected from an oxide of R2, a fluoride of R3, and an oxyfluoride of R4 wherein R2, R3 and R4 each are one or more elements selected from among rare earth elements inclusive of Y and Sc on a sintered magnet form of a R1—Fe—B composition wherein R1 is one or more elements selected from among rare earth elements inclusive of Y and Sc, andheat treating the magnet form and the powder at a temperature equal to or below the sintering temperature of the magnet in vacuum or in an inert gas.The invention offers a high performance, compact or thin permanent magnet having a high remanence and coercivity at a high productivity.

A battery pack comprising a battery cell having electrode terminals formed on an upper surface of the battery cell, and a protective circuit module (PCM) block mounted on the battery cell, wherein one or more connecting holes for electrical connection between the battery cell and the PCM block are perforated through the PCM block such that a connecting portion between the battery cell and the PCM block is exposed to the outside of the upper surface of the battery cell. The battery pack is lighter, compacter and miniaturized, thereby allowing an electronic device employing the battery pack to be reduced in an overall size, enhancing workability through a simplified assembling process, reducing manufacturing costs through reduction of the number of components, and enhancing productivity through reduction of the number of operating steps by eliminating additional installation steps.

An object of the present invention is to provide a catalyst which, in the FT process, exhibits a high chain growth probability, and a high catalytic activity, can stably and smoothly promote the reaction, exhibits a high productivity of C5+, and can efficiently produce liquid hydrocarbons, and a process therefor.The invention relates to a hydrocarbon-producing catalyst obtainable by supporting a ruthenium compound on a support composed of a manganese oxide and an aluminum oxide, and which satisfies at least one of characteristics (1) and (2): (1) the catalyst being treated with an aqueous alkaline solution and subsequently subjected to calcination treatment in the air at 150 to 500° C., (2) the aluminum oxide being an aluminum oxide wherein pore volume formed by pores having a pore diameter of 8 nm or more accounts for 50% or more of total pore volume.