198results about How to "High on/off ratio" patented technology

To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

The utility model discloses a tunable-frequency Terahertz metamaterials modulator comprising unit devices arranged periodically. Each unit device comprises a substrate, a functional material layer and metal resonator units. The functional material layer is arranged on the substrate, and the metal resonator units are arranged on the functional material layer. When the functional material layer turns to a metal phase from an insulation phase, conductivity of the functional material layer is exponentially increased to increase areas of middle open capacitance of the metal resonator units, the resonator frequency of the metal resonator units is decreased with the increase of the capacitance, so that frequency tuning of the unit devices is realized. By the aid of the tunable-frequency Terahertz metamaterials modulator, the metal opening resonator units arranged periodically are produced on the substrate in the Terahertz wave band of low transmitting consumption, conductivity changes before and after phase changes of the metal insulation phase change materials are used to change areas of the open capacitance of the resonator units, and resonant frequency is tunable; and initiative control of electromagnetic transmission features at a particular frequency by the Terahertz wave band is realized, and large switch ratio or high-modulation depth genera is obtained.

One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers.

A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer.

The invention discloses a p-type graphene film/n-type Ge schottky junction near-infrared photoelectric detector and a preparation method thereof. The p-type graphene film/n-type Ge schottky junction near-infrared photoelectric detector is characterized in that an n-type Ge substrate is used as a base region of a near-infrared photoelectric detector, and an n-type Ge substrate electrode is arranged on the lower surface of the n-type Ge substrate; the upper surface of the n-type Ge substrate is covered with an insulating layer, and the insulating layer does not go beyond the border of the n-type Ge substrate; the insulating layer is covered with a graphene contact electrode, and the graphene contact electrode does not go beyond the border of the insulating layer; and a p-type graphene film is laid on the graphene contact electrode, wherein a part of the p-type graphene film forms ohmic contact with the graphene contact electrode, the rest of the p-type graphene film forms schottky contact with the part, not covered with the insulating layer, of the upper surface of the n-type Ge substrate, and the p-type graphene film does not go beyond the border of the n-type Ge substrate electrode. The near-infrared photoelectric detector disclosed by the invention has the beneficial effects of large switch ratio, fast response speed and low dark current noise.

A production method of a metal oxide precursor layer provided with a substrate, a solution containing a metal ion as a metal oxide precursor, and a process to coat the solution while the temperature of the substrate is adjusted in the temperature range of 50%-150% of the boiling point (° C.) of a main solvent of the solution.

A thermistor device having a high-speed response to temperature and a large ON/OFF ratio at the operating temperature. The thermistor device comprises a first layer of a first material having a positive temperature coefficient of resistance and a second layer of a second material having a semiconductivity and formed directly on the first layer. As the first material changes from conductive to a semiconductive or an insulative at or near the transition temperature T_M-I, the interface between the first and second layer changes to a pn junction.

The invention relates to an organic semiconductor material with a high carrier mobility, which is capable of obtaining favorable semiconductor characteristics when used in an organic semiconductor device, and an organic transistor using the same. More specifically, the present invention has a following structure including an oligothiophene part and a connecting part G;

where, R₁ and R₂ are a hydrogen, a alkyl group, an alkoxy group, an aryl group, or an alkenyl group, R₁ and R₂ may be identical or different from each other, and where n is an integer. In the organic semiconductor material, the structure of the connecting part G may be any of the following:

where, R₃ and R₄ are a hydrogen, an alkyl group, an alkoxy group, an aryl group, or a alkenyl group, R₃ and R₄ may be identical or different from each other, and where n is an integer of 1 to 3.

A [1]benzothieno[3,2-b][1]benzothiophene compound expressed by General Formula (I): General Formula (I) where X and Y are each independently a hydrogen atom; a halogen atom; or a functional group having a straight or branched aliphatic alkyl group optionally having a halogen atom, a functional group having an alicyclic alkyl group optionally having a halogen atom, a functional group having a straight or branched aliphatic alkenyl group optionally having a halogen atom, a functional group having an alicyclic alkenyl group optionally having a halogen atom, a functional group having a carboxyl group, or a functional group having a thiol group, as a partial structure; and X and Y are the same or each independently different, provided that at least one of X and Y has a straight or branched aliphatic alkenyl group, an alicyclic alkenyl group, a carboxyl group or a thiol group, as a partial structure.

The invention discloses a preparation method for a resistive random access memory. The resistive random access memory comprises a bottom electrode, a resistance change dielectric layer material and a top electrode which are assembled in sequence. Preparation of the resistance change dielectric layer material includes the following steps that firstly, a first precursor, first inert gas, a second precursor and second inert gas are fed into a reactor in order, and a monolayer metallic oxide film is deposited on the bottom electrode through a cycle of hot atomic layer deposition; secondly, a plasma enhancement process is carried out on the film; finally, the steps are carried out circularly and alternately. In the preparation process of a resistance change dielectric layer, a brand new in-situ plasma enhancement hot atomic layer deposition technology is brought in, so the surface appearance and defects of the metallic oxide film can be adjusted on a large scale; the resistive random access memory obtained through the preparation method can achieve precision control over device resistance switching characteristics to enable the device switch ratio and erase/write voltage to be adjusted, and has excellent resistance change stability.

A radiation imaging element that includes radiation sensors disposed in a matrix so as to output signal charges corresponding to radiation transmitted through a subject, and TFTs for readout of signals from the radiation sensors, wherein

• • the TFT has at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode,
  • the active layer has at least a first region and a second region which has an electric conductivity larger than an electric conductivity of the first region,
  • the second region is in contact with the gate insulating layer, and
  • the first region is disposed so as to be electrically connected between the second region and at least one of the source electrode or the drain electrode.

A radiation imaging element that effectively suppresses noise and also achieves a high quality image is provided.

The invention discloses an environment-friendly Zn-Sb phase change storage thin-film material and a manufacturing method of the environment-friendly Zn-Sb phase change storage thin-film material. The environment-friendly Zn-Sb phase change storage thin-film material is characterized in that the chemical structural formula of the material is ZnxSb(100-x), and x is larger than 0 but smaller than 60. The manufacturing method comprises the steps of installing an elemental Sb or Zn target material in a magnetic control direct current sputtering target, installing a ZnSb alloy target material in a magnetic control radio frequency sputtering target, vacuumizing a sputtering chamber until the vacuum degree is 2.0*10<-4>Pa, feeding high-purity argon of 50ml/min into the sputtering chamber until the air pressure reaches 0.35Pa, controlling the sputtering power of the ZnSb alloy target material to be 20-50W, controlling the sputtering power of the elemental Sb or Zn target material to be 0-40W, and obtaining the finished environment-friendly Zn-Sb phase change storage thin-film material after the target materials sputter for 5 minutes at the room temperature. The environment-friendly Zn-Sb phase change storage thin-film material and the manufacturing method of the environment-friendly Zn-Sb phase change storage thin-film material have the advantages that the crystallization temperature is high, the phase change speed is high, the switch ratio is large, data retentivity is good, stability is high, and power consumption is small.

A novel display device is provided. The display device includes a pixel portion and a driver circuit for driving the pixel portion. The driver circuit includes a first transistor having a dual-gate structure. The pixel portion includes a second transistor having a single-gate structure and a pixel electrode electrically connected to the second transistor. The first transistor and the second transistor each include a first metal oxide film functioning as a channel. The metal oxide films each include a first region and a second region. The first region contains In or Zn, and oxygen. The second region contains In or an element M, and oxygen. The first region and the second region are dispersed or distributed in a mosaic pattern.

The invention relates to a preparation method of a high-mobility transistor based on PMMA doped micro-molecule. The preparation method comprises the following steps: S1, preparing a C8-BTBT and PMMA mixed solution; S2, cleaning a substrate: selecting a P-type heavily-doped silicon slice containing silicon dioxide, cleaning the P-type heavily-doped silicon slice after tailoring the same; S3, preparing a C8-BTBT active layer and a PMMA modification layer: overspreading the C8-BTBT and PMMA mixed solution configured through the step S1 on the substrate by using a dropper, spin-coating for 40s under the rotation speed of 2000-3000rpm; S4, thermally treating the spin-coated film; S5, preparing a molybdenum oxide buffer layer; and S6, preparing the source electrode and the drain electrode. The preparation method disclosed by the invention is simple, the prepared active layer is less in surface defect, the performance of the manufactured transistor device is improved.

The invention discloses a light sensing circuit and a driving method thereof, a display panel and a display device, belonging to the technical field of display. The light sensing circuit comprises that: the gate of a first transistor is electrically connected to a first control terminal, the first pole is electrically connected to a first voltage terminal, and the second pole is electrically connected to a first node; the gate of a second transistor is electrically connected to the first node, the first pole is electrically connected to a second voltage terminal, and the second pole is electrically connected to the first pole of a third transistor; the gate of the third transistor is electrically connected to a second control terminal, and the second pole is electrically connected to a data line; the gate of a fourth transistor is electrically connected to a third control terminal, the first pole is coupled to the first node, and the second pole is electrically connected to a third voltage terminal; the first transistor and the fourth transistor comprise active layers formed of metal oxide, and the fourth transistor is multiplexed into a light sensing element; and the second transistor and the third transistor comprise active layers formed of polysilicon. Compared with the prior art, the invention is advantageous to reduce the process steps and thin the display panel.