3505results about How to "Reduce parasitic capacitance" patented technology

A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

An object of the present invention is to prevent formation of a badly situated via metal in a Damascene wiring portion in multiple layers having an air-gap structure. In the present invention, a via is completely separated from an air-gap 45 by forming an interlayer insulating film 44 having the air-gap 45 between adjacent Damascene wiring portions after forming a sacrifice film pillar 42 from a selectively removable insulating film in a formation region of a connection hole. The present invention can provide multiple-layered buried wiring in which a high reliable via connection and a reduced parasitic capacitance due to the air-gap are achieved.

A shift register includes a plurality of stages to generate a plurality of output signals, in sequence. Each of the stages includes a driving circuit, a charging circuit, a discharging circuit and a holding circuit. The driving circuit is configured to generate a first output signal in response to a first clock signal or a second clock signal having a phase different from the first clock signal. The charging circuit is configured to charge an electric charge in response to a scan start signal or a second output signal of an adjacent previous stage. The discharging circuit is configured to discharge the electric charge in response to a third output signal of an adjacent next stage. The holding circuit is configured to maintain the first output signal within a first voltage when the first output signal is in an inactive state. Therefore, a parasite capacitance is decreased to prevent a floating of a pull-up transistor.