11675 results about "Carbide" patented technology

Methods of forming metal carbide thin films are provided. According to preferred embodiments, metal carbide thin films are formed in an atomic layer deposition (ALD) process by alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a metal source chemical, a reducing agent and a carbon source chemical. The reducing agent is preferably selected from the group consisting of excited species of hydrogen and silicon-containing compounds.

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.

Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate.

A plurality of embodiments for ReRAM devices and method of making are described. According to one embodiment, the ReRAM device includes a first electrode film formed on a substrate, a metal oxide film with oxygen vacancies formed on a first electrode film, a conformal TiAlC film, oxidized by diffused oxygen atoms from the metal oxide film, formed on the metal oxide film, and a second electrode film formed on the TiAlC film. According to another embodiment, the ReRAM device includes a pair of vertical metal oxide films, a pair of vertical conformal TiAlC films formed on the pair of vertical metal oxide films, the pair of vertical conformal TiAlC films oxidized by diffused oxygen atoms from the pair of vertical metal oxide films, and an electrode film formed between the pair of vertical conformal TiAlC films.

The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.

An implantable medical device and methods for making the implantable medical device are disclosed. The implantable medical device includes a substrate. At least a portion of the substrate is coated with a first layer including a polymer containing a drug. A barrier overlies the first layer. The barrier significantly reduces the rate of release of the drug from the polymer, thereby sustaining release of the drug from the medical device for a longer time.The barrier may be a homogeneous layer overlying the first layer, or a number of discrete deposits over the first layer. Alternatively, the barrier may be intermixed with an outer portion of the first layer. The barrier material is biocompatible, and typically has a thickness ranging from about 50 angstroms to about 20,000 microns. Suitable materials for the barrier include, but are not limited to, inorganic compounds, such as inorganic silicides, oxides, nitrides, carbides, as well as pure metals such as aluminum, chromium, gold, hafnium, iridium, niobium, palladium, platinum, tantalum, titanium, tungsten, zirconium, and alloys of these metals. The barriers disclosed may be applied to the first layer by several techniques, depending on the material being applied. Exemplary deposition techniques include physical vapor deposition, alkoxide hydrolysis, and electroless plating.The implantable device may be a stent or a graft, among other possibilities.

There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and / or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

Polycrystalline diamond (PCD) carbide composites of this invention have a microstructure comprising a plurality of granules formed from PCD, polycrystalline cubic boron nitride, or mixture thereof, that are distributed within a substantially continuous second matrix region that substantially surrounds the granules and that is formed from a cermet material. In an example embodiment, the granules are polycrystalline diamond and the cermet material is cemented tungsten carbide. PCD carbide composites of this invention display improved properties of fracture toughness and chipping resistance, without substantially compromising wear resistance, when compared to conventional pure PCD materials.