1435 results about "Oxygen vacancy" patented technology

A plurality of embodiments for ReRAM devices and method of making are described. According to one embodiment, the ReRAM device includes a first electrode film formed on a substrate, a metal oxide film with oxygen vacancies formed on a first electrode film, a conformal TiAlC film, oxidized by diffused oxygen atoms from the metal oxide film, formed on the metal oxide film, and a second electrode film formed on the TiAlC film. According to another embodiment, the ReRAM device includes a pair of vertical metal oxide films, a pair of vertical conformal TiAlC films formed on the pair of vertical metal oxide films, the pair of vertical conformal TiAlC films oxidized by diffused oxygen atoms from the pair of vertical metal oxide films, and an electrode film formed between the pair of vertical conformal TiAlC films.

A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

A resistive random access memory and a method for fabricating the same are provided. The method includes providing a bottom electrode formed on a substrate. A metal oxide layer is formed on the bottom electrode. An oxygen atom gettering layer is formed on the metal oxide layer. A top electrode is formed on the oxygen atom gettering layer. The previous mentioned structure is subjected to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, thus leaving a plurality of oxygen vacancies of the metal oxide layer.

The present invention provides aluminum oxide crystalline materials including dopants and oxygen vacancy defects and methods of making such crystalline materials. The crystalline materials of the present invention have particular utility in optical data storage applications.

Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm / min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

A ceramic support capable of supporting a catalyst comprising a ceramic body having fine pores with a diameter or width up to 1000 times the ion diameter of a catalyst component to be supported on the surface of the ceramic body, the number of the fine pores being not less than 1×1011 pores per liter, is produced by introducing oxygen vacancies or lattice defects in the cordierite crystal lattice or by applying a thermal shock to form fine cracks.

A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

To improve electric characteristics of a semiconductor device including an oxide semiconductor. Alternatively, to improve reliability of a semiconductor device including an oxide semiconductor. In a transistor including a first oxide film, an oxide semiconductor film, a pair of electrodes in contact with the oxide semiconductor film, and a second oxide film in contact with the oxide semiconductor film and the pair of electrodes, oxygen is added to the first oxide film and the second oxide film in contact with the oxide semiconductor film and the pair of electrodes, so that oxygen vacancies are reduced. The oxygen is diffused to the oxide semiconductor film by heat treatment or the like; thus, oxygen vacancies in the oxide semiconductor film are reduced.

To provide a highly reliable semiconductor device including an oxide semiconductor by suppression of change in its electrical characteristics. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer and a gate insulating layer provided over the oxide semiconductor layer to a region where a channel is formed, whereby oxygen vacancies which might be generated in the channel are filled. Further, extraction of oxygen from the oxide semiconductor layer by a source electrode layer or a drain electrode layer in the vicinity of the channel formed in the oxide semiconductor layer is suppressed, whereby oxygen vacancies which might be generated in a channel are suppressed.

The invention relates to a method of making a nanotubular titania substrate having a titanium dioxide surface comprised of a plurality of vertically oriented titanium dioxide nanotubes containing oxygen vacancies, including the steps of anodizing a titanium metal substrate in an acidified fluoride electrolyte and annealing the titanium oxide surface in a non-oxidating atmosphere. The invention further relates to a nanotubular titania substrate having an annealed titanium dioxide surface comprised of self-ordered titanium dioxide nanotubes containing oxygen vacancies. The invention further relates to a photo-electrolysis method for generating H2 wherein the photo-anode is a nanotubular titania substrate of the invention. The invention also relates to an electrochemical method of synthesizing CdZn / CdZnTe nanowires, wherein a nanoporous TiO2 template was used in combination with non-aqueous electrolyte. The invention also relates to a nanotubular titania substrate having CdTe or CdZnTe nanowires extending therefrom.

A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

To provide a semiconductor device in which an increase in oxygen vacancies is suppressed. To provide a semiconductor device with favorable electrical characteristics. To provide a highly reliable semiconductor device. In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.

A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.

A synthetic catalyst providing superoxide dismutase activity consists essentially of monodispersed nanoparticles of cerium oxide having a crystal lattice containing cerium in mixed valence states of Ce3+ and Ce4+ wherein the Ce4+ valence state predominates and containing an enhanced Ce3+ / Ce4+ ratio and an effective number of oxygen vacancies in the crystal lattice so as to increase catalytic efficiency. A method of making the synthetic catalyst includes dissolving hydrous Ce(NO3)3 in water so as to form a solution, stirring the solution, adding hydrogen peroxide, heating and stopping when the solution develops a light yellow color.

A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich / stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich / stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich / stochiometric metal oxide layer that is opposite from the oxygen-rich / stochiometric metal oxide layer.

Process for fabricating a SONOS flash memory device, including in one embodiment, forming a bottom oxide layer of an ONO structure on a semiconductor substrate, wherein the bottom oxide layer has a first oxygen vacancy content; treating the bottom oxide layer to decrease the first oxygen vacancy content to a second oxygen vacancy content; and depositing a dielectric charge-storage layer on the bottom oxide layer. In another embodiment, a process for fabricating a SONOS flash memory device includes forming a bottom oxide layer of an ONO structure on the semiconductor substrate under strongly oxidizing conditions, wherein the bottom oxide layer has a super-stoichiometric oxygen content and an oxygen vacancy content reduced relative to a bottom oxide layer formed by a conventional process; and depositing a dielectric charge-storage layer on the bottom oxide layer.

Chemical formula of anode material is LiFe1-xMxPO4-y Nz, where M as Liú¼Naú¼Kú¼Agú¼Cu; 0íœxíœ0.1, 0ú

A semiconductor device and process including a high-k gate dielectric is described. A substrate is provided, and a high-k gate dielectric material, preferably amorphous HfSiON, is deposited over the substrate. In preferred embodiments, the high-k dielectric material includes nitrogen. In a preferred embodiment, a silicon nitride layer is deposited using jet vapor deposition (JVD) on the high-k dielectric material. When the JVD nitride layer is deposited according to preferred embodiments, the layer has a low density of charge traps, it maintains comparable carrier mobility and provides better EOT compared to oxide or oxynitride. A second nitrogen-containing layer formed between the high-k dielectric and the gate electrode acts as a diffusion barrier. It also reduces problems relating to oxygen vacancy formation in high-k dielectric and therefore minimizes Fermi-level pinning.

The invention relates to an ultrathin nanosheet array electro-catalytic material with a nano-porous structure and oxygen vacancies. The material is a cobaltosic oxide primary nanosheet array which grows vertically on a conductive substrate and is doped with a metal; an ultrathin nanosheet with oxygen vacancies and nanopores is obtained on each primary nanosheet; the conductive substrate is a titanium sheet or a foamed nickel sheet, and the doped metal is zinc, nickel or manganese; and the thickness of each cobaltosic oxide ultrathin nanosheet doped with the metal is 1.22 nm, nanosheets are in a three-dimensional porous structure, and the nano-pore diameter is 3-6 nm. The ultrathin nanosheet array electro-catalytic material with the nano-porous structure and oxygen vacancies has the following advantages: the material can effectively reduce the overpotential and the spike potential of an oxygen evolution reaction, increase the conversion rate of a single cobalt atom and work continuously and stably in an alkali environment; the steps of a preparation method of the material are simple, the operation is convenient, the cost is low, and the material is environmental-friendly; and new ideas and strategies are provided for the function-oriented design and the performance optimization of an oxygen evolution catalyst of a water electrolysis system.

To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.

The invention discloses a mesoporous WO[3-x] visible-light-driven photocatalyst with oxygen vacancy and a preparation method thereof. The method comprises the following steps: calcinating at a controlled temperature of 350-600 DEG C in air so as to obtain a mesoporous silica molecular sieve KIT-6 loaded with tungsten trioxide by taking mesoporous silica molecular sieve KIT-6 as a hard template and a silicotungstic acid or phosphotungstic acid hydrate as a tungsten trioxide precursor; then calcinating at a controlled temperature of 450-550 DEG C so as to obtain a mesoporous silica molecular sieve KIT-6 provided with oxygen vacancy and loaded with tungsten trioxide by utilizing H2 as a reducing agent; and finally, removing the mesoporous silica molecular sieve KIT-6 by use of a 10wt% HF aqueous solution, thereby obtaining the mesoporous WO[3-x] visible-light-driven photocatalyst with oxygen vacancy and relatively large specific surface area and pore diameter. The mesoporous WO[3-x] visible-light-driven photocatalyst with oxygen vacancy is capable of effectively utilizing lights to rapidly catalyze CO2 so as to generate methane, and is high in catalysis efficiency, simple in preparation process and needed equipment, environmentally friendly in preparation process and free from pollution.

Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.

The invention provides an oxide multilayered gradient film for resistance-type random-access memory (RRAM) components. The oxide multilayered gradient film has the characteristic of resistance transition, and the formation general formula of the film is: MO<x- delta > / MO<x- delta (N-2) / (N-1)> / ... / MO<x- delta / (N-1)> / MO x, wherein in the formula, MO x is a binary or multiple oxide, N is the total layer number of the oxide multilayered gradient film, and N is not smaller than 3; delta is oxygen vacancy content of the oxide film at the bottom layer, and delta is not smaller than 1 but smaller than x; and the MO x is TiO 2, ZnO, MgO, Al 2 O 3 or SrTiO 3. In an RRAM component structured by the oxide multilayered gradient film, the oxide multilayered gradient film with different layers (N is not smaller than 3) can realize the characteristics of reversible resistance transition and memorization. With the increasing of the layer number N, initialized voltage reduces gradually. The high resistance value reaches the magnitude of M omega, while the low resistance value is 10 ohms, and the ratio of the high resistance to the low resistance reaches 10<2> to 10 <5>. Under the continuous voltage scanning and excitation, the oxide multilayered gradient film shows excellent and stable characteristics of high-low resistance transition and memorization.

The invention provides a catalyst for hydrogenation synthesis of methanol by using carbon dioxide and preparation and application thereof. The catalyst is a mixture of Cu and special-form ZnO, the molar ratio of Cu to ZnO is (0.5 to 4):1, and the ZnO is in a wire or cylinder shape. The catalyst has the advantages that the particle size of Cu is small, the surface area for Cu exposing is large, the ZnO exists in the special form, and multiple oxygen vacancies exist; compared with the catalyst prepared by the traditional method, the synthesis activity of the methanol is higher; when the catalyst is applied into the technology for hydrogenation synthesis of methanol by using carbon dioxide, the conversion rate of the carbon dioxide reaches 20.2%, and the selectivity of the methanol can reach 86.3%.

A flow field plate or bipolar plate for a fuel cell that includes a metal oxide coating that makes the bipolar plate conductive, hydrophilic and stable in the fuel cell environment. Non-limiting examples of suitable doped coatings Ta doped TiO2, Nb doped TiO2 and F doped SnO2. In an alternate embodiment, the metal oxide is a non-stoichiometric metal oxide that includes oxygen vacancies in the lattice structure that provides the conductivity. Non-limiting examples of suitable non-stoichiometric metal oxides include TiO2−x and TiO2+y.

A method for enhancing the light yield of a single crystal of cerium doped lutetium yttrium orthosilicate (LYSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process of thermal oxygenation of the crystal effectively supplies oxygen to fill at least some of the oxygen vacancies in the body of monocrystalline LYSO. A scintillation detector comprises a monocrystalline body of LYSO enhanced by oxygen diffusion into the crystal.

A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.