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13185 results about "Titanium oxide" patented technology
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Titanium oxide may refer to: Titanium dioxide, TiO₂ Titanium oxide, TiO, a non-stoichiometric oxide Titanium oxide, Ti₂O₃ Ti₃O Ti₂O δ-TiOₓ TiₙO2n−1 where n ranges from 3 - 9 inclusive, e.g. Ti₃O₅, Ti₄O₇, etc.
Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials
InactiveUS20050271813A1Steam generation heating methodsDecorative surface effectsGas phaseWater vapor
Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.
Owner:APPLIED MATERIALS INC
Atomic layer deposition of high-k metal oxides
InactiveUS20060258078A1Improve thermal stabilityLess growthSolid-state devicesSemiconductor/solid-state device manufacturingDielectric layerTitanium oxide
The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal oxides containing Group 4 metals, including hafnium oxide, zirconium oxide, and titanium oxide. More particularly, the present invention relates to the ALD formation of Group 4 metal oxide films using an metal alkyl amide as a metal organic precursor and ozone as a co-reactant.
Owner:AVIZA TECHNOLOGY INC +1
Selective deposition
Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and / or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.
Owner:ASM IP HLDG BV
Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide
A method for sidewall spacer line doubling uses thermal atomic layer deposition (ALD) of a titanium oxide (TiOx) spacer layer. A hardmask layer is deposited on a suitable substrate. A mandrel layer of diamond-like carbon (DLC) is deposited on the hardmask layer and patterned into stripes with tops and sidewalls. A layer of TiOx is deposited, by thermal ALD without the assistance of plasma or ozone, on the tops and sidewalls of the mandrel stripes. Thermal ALD of the TiO2, without energy assistance by plasma or ozone, has been found to cause no damage to the DLC mandrel stripes. After removal of the TiOx from the tops of the mandrel stripes and removal of the mandrel stripes, stripes of TiO2 are left on the hardmask layer and may be used as an etch mask to transfer the pattern into the hardmask layer.
Owner:WESTERN DIGITAL TECH INC
Temperature controlled chamber liner
InactiveUS6099651APrevent unwanted condensationPrevent decomposition and condensationSemiconductor/solid-state device manufacturingChemical vapor deposition coatingEngineeringTitanium oxide
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
Owner:APPLIED MATERIALS INC
Selective titanium nitride removal
ActiveUS9040422B2Convenient restHigh removal rateElectric discharge tubesSemiconductor/solid-state device manufacturingRemote plasmaTitanium nitride
Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.
Owner:APPLIED MATERIALS INC
Selective titanium nitride removal
ActiveUS20140256131A1Convenient restHigh removal rateElectric discharge tubesSemiconductor/solid-state device manufacturingRemote plasmaTitanium nitride
Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.
Owner:APPLIED MATERIALS INC
Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
InactiveUS6346741B1Easy to manufactureBig advantageOther chemical processesSemiconductor/solid-state device detailsLead zirconate titanateBarium strontium titanate
An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.
Owner:GULA CONSULTING LLC
Non-local plasma oxide etch
ActiveUS20140166617A1High titanium oxide selectivityElectric discharge tubesDecorative surface effectsRemote plasmaHydrogen
A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.
Owner:APPLIED MATERIALS INC
Non-local plasma oxide etch
InactiveUS9111877B2Electric discharge tubesSemiconductor/solid-state device manufacturingHydrogenRemote plasma
A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.
Owner:APPLIED MATERIALS INC
Selective titanium nitride removal
ActiveUS20150357205A1Convenient restHigh removal rateElectric discharge tubesSemiconductor/solid-state device manufacturingTitanium nitrideSilicon oxide
Owner:APPLIED MATERIALS INC
Magnetoresistive structure having a novel specular and barrier layer combination
InactiveUS7684160B1Magnetic-field-controlled resistorsConductive/insulating/magnetic material on magnetic film applicationYttriumTitanium oxide
A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a specular layer, a barrier layer, and a capping layer. The spacer layer resides between the pinned layer and the free layer. The free layer is electrically conductive and resides between the specular layer and the nonmagnetic spacer layer. The specular layer is adjacent to the free layer and includes at least one of titanium oxide, yttrium oxide, hafnium oxide, magnesium oxide, aluminum oxide, nickel oxide, iron oxide, zirconium oxide, niobium oxide, and tantalum oxide. The barrier layer resides between the specular layer and the capping layer. The barrier layer is nonmagnetic and includes a first material. The capping layer includes a second material different from the first material.
Owner:WESTERN DIGITAL TECH INC
Antireflection material and polarizing film using the same
InactiveUS6777070B1Improve anti-reflection effectReduce image contrastSynthetic resin layered productsCoatingsRefractive indexDisplay device
An anti-reflection material and a polarization film which exhibit superior anti-reflection properties by preventing external light such as sunlight, fluorescent light, etc., from being reflected on a display, which yield a clear image without sparkling and reduces image contrast, and which exhibit superior wear resistance, chemical resistance, and contamination resistance, as well as exhibit optical stability. A hard coat layer is provided on one surface or two surfaces of a transparent substrate directly or via another layer, and an anti-reflection film having a lower refraction index than the hard coat layer is further provide on the hard coat layer. The hard coat layer consists of at least {circle around (1 a polymer polymerizing (metha)acrylate compound having a fluorene structure; {circle around (2 a polymer polymerizing urethane (metha)acrylate compound and ultrafine particles having a high refraction index; and {circle around (3 radiation and / or thermosetting resin and surface-treated titanium oxide ultrafine particles.
Owner:TOMOEGAWA PAPER CO LTD
RFID device and method of forming
A radio frequency identification (RFID) inlay includes an electrical connection between a chip and an antenna. The electrical connection includes conductive interposer leads and a capacitive connection. The capacitive connection may involve putting the antenna and the interposer leads into close proximity, with dielectric pads therebetween, to allow capacitive coupling between the antenna and the interposer leads. The dielectric pads may include a non-conductive adhesive and a high dielectric material, such as a titanium oxide. The connections provide a convenient, fast, and effective way to operatively couple antennas and interposers. The RFID inlay may be part of an RFID lable or RFID tag.
Owner:AVERY DENNISON CORP
Structures, methods, and systems for ferroelectric memory transistors
InactiveUS20050030825A1Reliability can be promotedReduce layeringSolid-state devicesSemiconductor/solid-state device manufacturingInsulation layerPermittivity
Integrated memory circuits, key components in thousands of electronic and computer products, have recently been made using ferroelectric memory transistors, which offer faster write cycles and lower power requirements than over conventional floating-gate transistors. One problem that hinders the continued down-scaling of conventional ferroelectric memory transistors is the vulnerability of their gate insulations to failure at thinner dimensions. Accordingly, the inventors devised unique ferroelectric gate structures, one of which includes a high-integrity silicon-oxide insulative layer, a doped titanium-oxide layer, a weak-ferroelectric layer, and a control gate. The doped titanium-oxide layer replaces a metal layer in the conventional ferroelectric gate structure, and the weak-ferroelectric layer replaces a conventional ferroelectric layer. These replacements reduce the permittivity mismatch found in conventional gate structures, and thus reduce stress on gate insulation layers, thereby improving reliability of ferroelectric memory transistors, particularly those with thinner gate insulation.
Owner:MICRON TECH INC
Anti-infectious, biocompatible titanium coating for implants, and method for the production thereof
The present invention relates to a method for the preparation of a biocompatible metal ion-containing titanium oxide coating on an implant wherein the metal ions can be eluted under physiological conditions and are homogeneously dispersed within the coating, as well as to an implant which can be prepared according to the method of the present invention.
Owner:BIOCER ENTWICKLUNGS
Plasma synthesis of metal oxide nanopowder and apparatus therefor
InactiveUS6994837B2Large dischargeKeep for a long timePigmenting treatmentMaterial nanotechnologyDopantPhysical chemistry
A process and apparatus for the synthesis of metal oxide nanopowder from a metal compound vapour is presented. In particular a process and apparatus for the synthesis of TiO2 nanopowder from TiCl4 is disclosed. The metal compound vapour is reacted with an oxidizing gas in electrically induced RF frequency plasma thus forming a metal oxide vapour. The metal oxide vapour is rapidly cooled using a highly turbulent gas quench zone which quickly halts the particle growth process, yielding a substantial reduction in the size of metal oxide particles formed compared with known processes. The metal compound vapour can also react with a doping agent to create a doped metal oxide nanopowder. Additionally, a process and apparatus for the inline synthesis of a coated metal oxide is disclosed wherein the metal oxide particles are coated with a surface agent after being cooled in a highly turbulent gas quench zone.
Owner:TEKNA PLASMA SYST INC
Oxygen depleted etching process
A method for oxygen depleted plasma etching and mixed mode plasma etching are disclosed. The method includes using an oxygen free etch plasma or a substantially oxygen free etch plasma at a high temperature to etch a stack including a plurality of layers of thin film materials. The oxygen depleted etching prevents or substantially reduces by-product re-deposition of titanium oxides generated by etching of titanium thin films in the stack. The titanium oxides can serve as a secondary mask layer that can cause defects in devices formed from the stack. Mixed mode plasma etching can include etching the stack with an oxygen free plasma, a substantially oxygen free plasma, and an oxygen containing plasma at different stages of a process.
Owner:UNITY SEMICON
Tubular titanium oxide particles, method for preparing the same, and use of the same
InactiveUS20040265587A1Large specific surface areaImprove detection accuracyMaterial nanotechnologyLight-sensitive devicesReduction treatmentSorbent
The process for preparing tubular titanium oxide particles comprises subjecting a water dispersion sol, which is obtained by dispersing (i) titanium oxide particles and / or (ii) titanium oxide type composite oxide particles comprising titanium oxide and an oxide other than titanium oxide in water, said particles having an average particle diameter of 2 to 100 nm, to hydrothermal treatment in the presence of an alkali metal hydroxide. After the hydrothermal treatment, reduction treatment (including nitriding treatment) may be carried out. The tubular titanium oxide particles obtained in this process are useful as catalysts, catalyst carriers, adsorbents, photocatalysts, decorative materials, optical materials and photoelectric conversion materials. Especially when the particles are used for semiconductor films for photovoltaic cells or photocatalysts, prominently excellent effects are exhibited.
Owner:JGC CATALYSTS & CHEM LTD
Process for making durable rutile titanium dioxide pigment by vapor phase deposition of surface treatment
The present invention relates to a process for making durable titanium dioxide pigment by vapor phase deposition of surface treatments on the titanium dioxide particle surface by reacting titanium tetrachloride vapor, an oxygen containing gas and aluminum chloride in a plug flow reactor to form a product stream containing titanium dioxide particles; and introducing silicon tetrachloride into the reactor at a point down stream of the point where the titanium tetrachloride and oxygen were contacted and where at least 97% of the titanium tetrachloride has been converted to titanium dioxide or where the reaction temperature is no greater than about 1200° C., and preferably not more than about 1100° C.
Owner:THE CHEMOURS CO FC LLC
Solid composite electrolyte membrane and method of making
ActiveUS20070117026A1Improve conductivitySolid electrolytesSolid electrolyte cellsPorosityComposite electrolyte
A solid composite electrolyte membrane for use in a lithium battery is provided which exhibits a conductivity ranging from about 10−4 S cm−1 to about 10−3 S cm−1 at ambient temperature. The membrane is formed by providing a glass or glass-ceramic powder formed from a mixture of lithium carbonate, alumina, titanium dioxide, and ammonium dihydrogen phosphate. The powder is mixed with a conditioning agent and at least one solvent, followed by the addition of a binder and one or more plasticizers. The resulting slurry is cast into a tape which is then subjected to a binder burn-off and sintering process to form the membrane. The resulting membrane may be a glass-ceramic composite having a porosity ranging from 0 to 50%, or the membrane may be further infiltrated with a polymer to form a water-impermeable polymeric-ceramic composite membrane.
Owner:UNIV OF DAYTON THE
Coated article with low-E coating having titanium oxide layer and/or nicr based layer(s) to improve color values and/or transmission, and method of making same
InactiveUS20100279144A1Lower transmissive b * valueHigher visible transmissionVacuum evaporation coatingSputtering coatingInsulated glazingTransmittance
Certain example embodiments of this invention relate to a coated article including a low-E coating. In certain example embodiments, a titanium oxide inclusive bottom layer stack and / or a NiCr-based layer(s) are designed to improve b* coloration values and / or transmission of the coated article. These layer stack portions also are advantageous in that they permit a double-silver coated article to achieve (i) an LSG value (Tvis / SHGC) of at least 2.0, (ii) an SHGC value of no greater than 35%, more preferably no greater than 33, 32 or 30%, and (iii) a U-value (BTU h−1 ft−2° F.−1) (e.g., x=12 mm) of no greater than 0.30, more preferably no greater than 0.28 or 0.25. In certain example embodiments, the titanium oxide based layer may be an interlayer provided in a bottom portion of the layer stack between first and second layers comprising silicon nitride. Coated articles according to certain example embodiments of this invention may be used in the context of insulating glass (IG) window units, other types of windows, or in any other suitable application.
Owner:GUARDIAN GLASS LLC
Titanium-containing materials
The invention relates to a method of preparing a solution containing colloidal particles which contain crystalline titanium dioxide wherein one or more hydrolysable titanium-containing compound(s) is stabilised by oxalic acid in a reaction medium. The reaction further relates to the preparation of titania materials (including particulate materials, coating solutions and films) which comprise or include anatase phase titania, and so are suitable in photocatalytic applications. The invention also deals with a method of preparing B-phase titania.
Owner:IND RES LTD
Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
InactiveUS20090126791A1Low efficiencyLow refractive indexGlass/slag layered productsCoatingsRefractive indexLight reflection
Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and / or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and / or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.
Owner:GUARDIAN GLASS LLC
Nano-lithium-ion batteries and methos for manufacturing nano-lithium-ion batteries
The disclosure describes nano-lithium-ion batteries having a cathode, an anode including lithium titanium oxide nanoparticles, a separator including silicon dioxide nanoparticles and an electrolyte. In a preferred embodiment, the cathode is composed of 70-95 wt % lithium cobalt oxide, 1-6 wt % of a conductive carbon, and a synthetic resin including at least one thermoplastic; the anode is composed of 75-90 wt % lithium titanium oxide nanoparticles, 1-5 wt % of a conductive carbon, and a synthetic resin including at least one thermoplastic; and the separator is composed of silicon dioxide nanoparticles and a synthetic resin comprising at least one thermoplastic. The disclosure also describes methods of manufacturing the nano-lithium-ion batteries.
Owner:FU ZHIGUO +2
Method of producing a solar cell; a solar cell and a method of producing a semiconductor device
InactiveUS6093882ASemiconductor/solid-state device manufacturingPhotovoltaic energy generationSilver pasteSolar cell
Owner:MITSUBISHI ELECTRIC CORP
Antibacterial polypropylene melt-blow non-woven filter material and preparation method thereof
ActiveCN102836594AImprove filtering effectImprove filtration efficiencyFiltration separationNon-woven fabricsPolymer sciencePolypropylene
The invention relates to a polypropylene melt-blow non-woven filter material, in particular to an antibacterial polypropylene melt-blow non-woven filter material and a preparation method thereof. The polypropylene melt-blow non-woven filter material is prepared from the following raw materials in parts by weight: 85-95 parts of melt-blow polypropylene slices, 1-5 parts of nanometer tourmaline, 1-3 parts of nanometer titanium oxide, 1-3 parts of nanometer zinc oxide, 0.1-3 parts of a coupling agent, 0.1-2 parts of a dispersing agent and 0-0.5 part of an antioxidant. According to the antibacterial polypropylene melt-blow non-woven filter material prepared with the method, a formula and a preparation process are improved, so that the electret polarity time of the prepared filter material can be up to 5-6 years, and the antibacterial performance is superior to the prior art.
Owner:XINGNUO ECONOMIC & TRADE DEV SHANGHAI
Vanadium-titanium oxide catalyst, and preparation method and application thereof
InactiveCN102764643ANo effect on activityDo not change the production processDispersed particle separationMetal/metal-oxides/metal-hydroxide catalystsMetal poisoningAlkaline earth metal
The invention relates to a vanadium-titanium oxide catalyst which can resist alkaline metal and alkaline earth metal poisoning. The catalyst is characterized in that the vanadium-titanium oxide catalyst is doped with an element Ce. The catalyst has fine resistance to alkaline metal poisoning, and above all, the doped cerium component has no influence on the activity of the SCR (selective catalytic reduction) catalyst while improving the resistance of the V2O5 / (MoO3)x(WO3)1-x-TiO2 catalyst to alkaline metal poisoning. The preparation method of the catalyst is simple and easy to implement and has very excellent N2 generation selectivity; and meanwhile, the Ce is a non-poisonous component and can not do harm to human health and ecological environment.
Owner:RES CENT FOR ECO ENVIRONMENTAL SCI THE CHINESE ACAD OF SCI
Heat treatable coated article with tin oxide inclusive layer between titanium oxide and silicon nitride
InactiveUS7153579B2Increased durabilityConvenient coatingGlass/slag layered productsCoatingsElectrical resistance and conductanceMetallurgy
A low-E coated article is provided, in certain example embodiments, with a layer including tin oxide provided between a layer including titanium oxide and a layer including silicon nitride. It has been found that the provision of such a tin oxide inclusive layer between silicon nitride and titanium oxide can significantly improve durability of the resulting coated article, especially after heat treatment (HT). In certain example embodiments, the coated article may be formed so as to have a fairly high visible transmission (TY or Tvis) to sheet resistance (Rs) ratio (i.e., a ratio Tvis / Rs). Coated articles herein may be used in the context of windows or the like (e.g., laminated vehicle windshields).
Owner:GUARDIAN EURO S A R L +1
Short fiber-particle synergetically-reinforced copper-based composite material and preparation method thereof
The invention relates to a copper-based composite material, and particularly relates to a short fiber-particle synergetically-reinforced copper-based composite material which is prepared through powder metallurgy. Short fibers and particles are used as reinforced phases, the content of the short fiber is 0.1-0.1 wt%, and the content of reinforcement particles is 0.1-10 wt%. The short fibers can be carbon nanotubes, carbon nanofibers, ceramic short fibers, and the like, and the particles used as reinforced phases can be aluminum oxide, zirconium oxide, magnesium oxide, titanium dioxide, silicon carbide, titanium carbide, tungsten carbide, silicon nitride, aluminum nitride, titanium nitride, titanium diboride, Ti3SiC2, and the like. The composite material is prepared through the steps of mixing, forming, sintering and processing, and the room temperature and the high temperature strength of the composite material can be increased by more than 3 times in comparison with those of pure copper; the electrical conductivity of the composite material can reach more than 80% of that of pure copper; the thermal conductivity of the composite material can reach more than 70% of that of pure copper; the coefficient of friction of the composite material can be reduced to be below 70% of that of pure copper; and the wear rate of the composite material can be reduced to be below 50% of that of pure copper.
Owner:UNIV OF SCI & TECH BEIJING
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