154 results about "Suboxide" patented technology

A method is described for preparing a niobium suboxide represented by the formula, NbOx, in which 0.7<x<1.3. The method involves reacting NbOy (in which y<1.8<2.1) with a stoichiometric amount of niobium metal, in the presence of hydrogen. The niobium suboxide produced by such method may be used to fabricate anodes for solid electrolyte capacitors.

A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and / or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.

Disclosed are sintered bodies that include: (a) 30 to 100 mol % of NbOx, wherein 0.5<x<1.5; and (b) 0 to 70 mol % of MgO. The sintered bodies may be used as inert apparatuses in the production of niobium suboxide powder or niobium suboxide anodes, or as chemically resistant components in chemical apparatuses.

High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

A semiconductor device includes a first insulating film on a silicon substrate and a second insulating film on the first insulating film. The first insulating film is a silicon oxide film having a thickness of 1 nm or less and a suboxide content of 30% or less. The second insulating film is a high dielectric constant insulating film.

A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and / or primary niobium metal).

Disclosed is an anti-stain coating composition which enables to form a stain-proof coating film that can impart excellent slime resistance, and in which the re-crystallization of an anti-stain agent in the coating can be prevented. The anti-stain coating composition is characterized by comprising a coating film-forming resin (A) and the following anti-stain agents (B) and (C): (B) an inorganic copper-containing anti-stain agent (e.g., copper suboxide); and (C) N,N'-dimethyl-N'-tolyl-(N-fluorodichloromethylthio)- sulfamide. The anti-stain agent (B) is preferably contained at a ratio of 60 to 1000 parts by weight relative to 100 parts by weight of the coating film-forming resin (A). The anti-stain agent (C) is preferably contained at a ratio of 1.4 to 80 parts by weight relative to 100 parts by weight of the coating film-forming resin (A). The anti-stain agent (C) is preferably contained at a ratio of 0.1 to 100 parts by weight relative to 100 parts by weight of the anti-stain agent (B).

Methods to at least partially reduce a niobium oxide are described wherein the process includes heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material, and for a sufficient time and at a sufficient temperature to form an oxygen reduced niobium oxide. Niobium oxides and / or suboxides are also described as well as capacitors containing anodes made from the niobium oxides and suboxides.

A process and apparatus are presented for obtaining inorganic fullerene-like nanostructures. A metal oxide is evaporated at predetermined temperature conditions, and is swept towards a reacting zone, to which first and second gas phase reacting agents are concurrently swept. The evaporated metal oxide thus interacts with the first reacting agent and is converted into metal suboxide nanoparticles in the gas phase. The condensing metal suboxide nanoparticles interact with the second reacting agent in the gas phase resulting in substantially pure phase of the inorganic fullerene-like nanoparticles.