154 results about "Suboxide" patented technology

A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and / or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.

A method is described for preparing a niobium suboxide represented by the formula, NbOx, in which 0.7<x<1.3. The method involves reacting NbOy (in which y<1.8<2.1) with a stoichiometric amount of niobium metal, in the presence of hydrogen. The niobium suboxide produced by such method may be used to fabricate anodes for solid electrolyte capacitors.

Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and / or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and / or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.

A method is described for preparing a niobium suboxide represented by the formula, NbOx, in which 0.7<x<1.3. The method involves reacting NbOy (in which y<1.8<2.1) with a stoichiometric amount of niobium metal, in the presence of hydrogen. The niobium suboxide produced by such method may be used to fabricate anodes for solid electrolyte capacitors.

A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and / or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.

Disclosed are sintered bodies that include: (a) 30 to 100 mol % of NbOx, wherein 0.5<x<1.5; and (b) 0 to 70 mol % of MgO. The sintered bodies may be used as inert apparatuses in the production of niobium suboxide powder or niobium suboxide anodes, or as chemically resistant components in chemical apparatuses.

High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

A method to passivate a metal or metal oxide or metal suboxide powder, especially a valve metal powder such as tantalum or niobium and the passivated powders formed therefrom are described. The method includes passivating a starting powder with a gas having at least 25 wt. % oxygen present. Passivation is preferably achieved without performing any evacuation steps. Capacitors made from the passivated powders are also described.

Process and apparatus are provided for a high energy efficiency chemical combustion process. The process provides two reaction steps, both of which are exothermic. First, a reduced oxygen carrier is contacted with oxygen in a reactor to form an oxidized oxygen carrier, such as metal oxide or metal suboxide, and then the oxidized oxygen carrier is fed to a second reactor and combusted with a fuel. The reaction produces the reduced oxygen carrier and carbon dioxide. The reduced oxygen carrier from the second reactor is recycled back to said first reactor. Carbon monoxide can also be produced during the process depending on stoichiometric amounts of the reactants. Though the process can be performed in various types of reactor systems, one preferred embodiment is the flash furnace with the production of fly ash during combustion. The process is highly efficient and produces a large amount of usable work.

Flash memory cells are provided that include a first source / drain region and a second source / drain region separated by a channel region. A first gate opposes. A first gate insulator separates the first gate from the channel. The first gate insulator includes a graded composition gate insulator. A second gate is separated from the first gate insulator by a second gate insulator. The above memory cells produce gate insulators with less charging at the interface between composite insulator layers and provide gate insulators with low surface state densities. The memory cells substantially reduce large barrier heights or energy problems by using dielectrics having suitably, adjustably lower barrier heights in contact with the polysilicon floating gate. Such adjustable barrier heights of controlled thicknesses can be formed using a silicon suboxide and a silicon oxycarbide dielectrics prepared according to the process as described herein.

A semiconductor device includes a first insulating film on a silicon substrate and a second insulating film on the first insulating film. The first insulating film is a silicon oxide film having a thickness of 1 nm or less and a suboxide content of 30% or less. The second insulating film is a high dielectric constant insulating film.

A process and apparatus are presented for obtaining inorganic fullerene-like nanostructures. A metal oxide is evaporated at predetermined temperature conditions, and is swept towards a reacting zone, to which first and second gas phase reacting agents are concurrently swept. The evaporated metal oxide thus interacts with the first reacting agent and is converted into metal suboxide nanoparticles in the gas phase. The condensing metal suboxide nanoparticles interact with the second reacting agent in the gas phase resulting in substantially pure phase of the inorganic fullerene-like nanoparticles.

A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and / or primary niobium metal).

Composite silicon based materials are described that are effective active materials for lithium ion batteries. The composite materials comprise processed, e.g., high energy mechanically milled, silicon suboxide and graphitic carbon in which at least a portion of the graphitic carbon is exfoliated into graphene sheets. The composite materials have a relatively large surface area, a high specific capacity against lithium, and good cycling with lithium metal oxide cathode materials. The composite materials can be effectively formed with a two step high energy mechanical milling process. In the first milling process, silicon suboxide can be milled to form processed silicon suboxide, which may or may not exhibit crystalline silicon x-ray diffraction. In the second milling step, the processed silicon suboxide is milled with graphitic carbon. Composite materials with a high specific capacity and good cycling can be obtained in particular with balancing of the processing conditions.

An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

An electric device has a plurality of cells in which in an acid electrolyte a lanthanide and zinc form a redox couple that provide a current, and in which at least two of the cells are separated by a bipolar electrode that comprises a glassy carbon or a Magneli phase titanium suboxide.

A plasma display panel (PDP) includes an EMI filter at a front portion thereof for blocking / shielding substantial amounts of electromagnetic waves. The filters has high visible transmission, and is capable of blocking / shielding electromagnetic waves. In certain example embodiments, a silver based coating of the EMI filter reduces damage from EMI radiation through highly conductive Ag layers, blocks significant amounts of NIR and IR radiation from outdoor sunlight to reduce PDP panel temperature, and enhances contrast ratio through reduced reflection, while maintaining high visible transmission. In certain example embodiments, at least one layer of or including silicon nitride may be Si-rich, and / or at least one layer including an oxide of Ni and / or Cr may be a suboxide, in order to improve heat treatability of the coated article.

A direct carbon fuel electrochemical device and method for generating electricity. The apparatus includes a solid oxide electrolyte having an anode side and a cathode side. Carbon and at least one metal oxide are provided to the anode side for reaction at the anode and air is provided to the cathode side. At least a portion of the carbon is oxidized and at least a portion of the metal oxide is reduced to a metal or lower oxide metal oxide on the anode side. The metal or lower oxide metal oxide is electrochemically reoxidized with oxygen in the air, thereby generating electricity.

Disclosed is an anti-stain coating composition which enables to form a stain-proof coating film that can impart excellent slime resistance, and in which the re-crystallization of an anti-stain agent in the coating can be prevented. The anti-stain coating composition is characterized by comprising a coating film-forming resin (A) and the following anti-stain agents (B) and (C): (B) an inorganic copper-containing anti-stain agent (e.g., copper suboxide); and (C) N,N'-dimethyl-N'-tolyl-(N-fluorodichloromethylthio)- sulfamide. The anti-stain agent (B) is preferably contained at a ratio of 60 to 1000 parts by weight relative to 100 parts by weight of the coating film-forming resin (A). The anti-stain agent (C) is preferably contained at a ratio of 1.4 to 80 parts by weight relative to 100 parts by weight of the coating film-forming resin (A). The anti-stain agent (C) is preferably contained at a ratio of 0.1 to 100 parts by weight relative to 100 parts by weight of the anti-stain agent (B).

A recording layer included in an optical information recording medium of the present invention includes: a mixture of a low oxide Te-O-M (M denotes at least one element selected from the group consisting of a metallic element, a metalloid element, and a semiconductor element) or a low oxide A-O (A denotes at least one element selected from the group consisting of Sb, Sn, In, Zn, Mo and W; and a material X (X denotes at least one compound selected from the group consisting of a fluoride, a carbide, a nitride and an oxide). Herein the low oxide refers to an oxide whose composition ratio of oxygen element is smaller than a composition ratio of oxygen element according to a stoichiometric composition.

Methods to at least partially reduce a niobium oxide are described wherein the process includes heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material, and for a sufficient time and at a sufficient temperature to form an oxygen reduced niobium oxide. Niobium oxides and / or suboxides are also described as well as capacitors containing anodes made from the niobium oxides and suboxides.

A predoping method for lithium, which is characterized by mixing and kneading, in the presence of a solvent, lithium metal with (a) silicon and a composite dispersion of silicon and silicon dioxide, (b) particles represented by SiOx (wherein 0.5≦x<1.6) and having a fine structure wherein fine silicon particles are dispersed in a silicon-based compound, and (c) an Si-based material that is a mixture of one or more oxides selected from among the lower oxides of silicon represented by the above-mentioned formula and that is capable of absorbing and desorbing lithium ions; a lithium-predoped electrode which uses the predoping method for lithium; and an electricity storage device.

Provided is a method of recovering valuable metal from oxide system scrap including the steps of performing electrolysis using an insoluble electrode as an anode and an oxide system scrap as a cathode, and recovering the scrap of the cathode as metal or suboxide. Specifically, this method enables the efficient recovery of valuable metal from oxide system scrap of an indium-tin oxide (ITO) sputtering target or oxide system scrap such as mill ends that arise during the production of such a sputtering target.

The invention relates to a process for producing capacitors based on niobium suboxide, and having an insulator layer of niobium pentoxide. Also described is a powder mixture suitable for production of capacitors. Pressed bodies produced from the powder mixture, and capacitors having specific properties are also disclosed.

Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and / or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and / or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.