3702 results about "Indium tin oxide" patented technology

In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

An optical-interference type display panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple first conductive optical film stacks, supporting layers and multiple second conductive optical film stacks are formed. The substrate further has a plurality of connecting pads consisting of a transparent conductive film of the first conductive optical film stacks. Since the transparent conductive film is made of indium tin oxide, these connecting pads have the excellent anti-oxidation ability at their surface.

A light-emitting diode (LED) for both AlGaInP- and GaN-based materials needs a good transparent current spreading layer to disseminate electrons or holes from the electrode to the active layer. The present invention utilizes a conductive and transparent ITO (Indium Tin Oxide) thin film with an ultra-thin (to minimize the absorption) composite metallic layer to serve as a good ohmic contact and current spreading layer. The present invention avoids the Schottky contact due to direct deposition of ITO on the semiconductor. For AlGaInP materials, a thick GaP current spreading layer is omitted by the present invention. For GaN-based LEDs with the present invention, semi-transparent Ni / Au contact layer is avoided. Therefore, the light extraction of LED can be dramatically improved by the present invention. Holes may be etched into the semiconductor cladding layer forming a Photonic Band Gap structure to improve LED light extraction.

Signs including electroluminescent lamps are described. In accordance with one embodiment of the present invention a sign includes an electroluminescent lamp integrally formed therewith. The electroluminescent lamp is formed on the sign by using the sign as a substrate for the lamp and performing the steps of screen printing a rear electrode to a front surface of the sign, screen printing at least one dielectric layer over the rear electrode after screen printing the rear electrode to the sign, screen printing a phosphor layer over the dielectric layer to define a desired area of illumination that is smaller in area than the dielectric layer, screen printing a sealant layer over the remaining portion of the dielectric layer, screen printing a layer of indium tin oxide ink to the phosphor layer, screen printing an outlining electrode layer to the sign that outlines the rear electrode, screen printing a background layer onto the sign so that the background layer substantially surrounds the desired area of illumination, and applying a protective coat over the indium tin oxide ink and background layer. The rear electrode of each lamp is screen printed directly to the front surface of the sign, and the other layers of the EL lamp are screen printed over the rear electrode.

Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.