4798results about How to "Improve reflectivity" patented technology

An image display device, in which image display media are sealed between opposed substrates, at least one of two substrates being transparent, and in which the image display media, to which an electrostatic field is applied, are made to move so as to display an image. A construction of particles used as the image display media is improved (the first, second, fourth, fifth, sixth, eighth and ninth aspects of the invention), and a material of the particles used as the image display media is improved (the third, seventh and tenth aspects of the invention). Whiteness of the particles and a liquid powder using the particles is improved, particle agglutination is prevented, and the charge property is controlled. Moreover, durability is improved such that a contrast of the image display during a repetition display is not decreased. As a result, an excellent image display can be achieved.

This invention combines the precision spray process with in-flight laser treatment in order to produce direct write electronic components. In addition to these components, the process can lay down lines of conductive, inductive, and resistive materials. This development has the potential to change the approach to electronics packaging. This process is revolutionary in that components can be directly produced on small structures, thus removing the need for printed circuit boards.

An electrochromic variable reflectance mirror for a vehicle includes a reflector / electrode on the third surface of the mirror. This reflector / electrode forms an integral electrode in contact with the electrochromic media, and may be a single layer of a highly reflective material or may comprise a series of coatings. When a series of coatings is used for the reflector / electrode, there should be a base coating which bonds to the glass surface and resists any adverse interaction, e.g., corrosive action, with the constituents comprising the electrochromic media, an optional intermediate layer (or layers) which bonds well to the base coating and resists any adverse interaction with the electrochromic media, and at least one highly reflective layer which directly contacts the electrochromic media and which is chosen primarily for its high reflectance, stable behavior as an electrode, resistance to adverse interaction with the materials of the electrochromic media, resistance to atmospheric corrosion, resistance to electrical contact corrosion, the ability to adhere to the base or intermediate layer(s) (if present) and to the epoxy seal, and ease of cleaning. If a base layer is deposited it preferably covers the entire third surface; however, when this is done the highly reflective layer may optionally only coat the central portion of the third surface and not the perimeter edge portion. The third surface reflector / electrode provides of improved electrical interconnection techniques used to impart a voltage drive potential to a transparent conductor on the mirror's second surface.

An electrophoretic medium (100) comprises at least one type of particle (108) suspended in a suspending fluid (106) and capable of moving therethrough on application of an electric field to the medium, the particles (108) including at least one electrophoretically mobile specularly reflective particle.

An electrophoretic medium (100) comprises at least one type of particle (108) suspended in a suspending fluid (106) and capable of moving therethrough on application of an electric field to the medium, the particles (108) including at least one electrophoretically mobile specularly reflective particle.

Fabrication methods for capacitive-micromachined ultrasound transducers (“cMUT”) and cMUT imaging array systems are provided. cMUT devices fabricated from low process temperatures are also provided. In an exemplary embodiment, a process temperature can be less than approximately 300 degrees Celsius. A cMUT fabrication method generally comprises depositing and patterning materials on a substrate (400). The substrate (400) can be silicon, transparent, other materials. In an exemplary embodiment, multiple metal layers (405, 410, 415) can be deposited and patterned onto the substrate (400); several membrane layers (420, 435, 445) can be deposited over the multiple metal layers (405, 410, 415); and additional metal layers (425, 430) can be disposed within the several membrane layers (420, 435, 445). The second metal layer (410) is preferably resistant to etchants used to etch the third metal layer (415) when forming a cavity (447). Other embodiments are also claimed and described.

Oppositely of a temperature measuring surface of an object-to-be-measured 16, a reflecting member 28 is disposed while being spaced by a reflection gap 35 from the temperature measuring surface. The reflecting member 28 is composed of a heat ray reflecting material capable of reflecting heat ray in a specific wavelength band, in a portion including a reflection surface 35a. A heat ray extraction pathway section 30 is disposed through the reflecting member 28 so that one end thereof faces the temperature measuring surface. Heat ray extracted through the heat ray extraction pathway section from the reflection gap is detected by a temperature detection section 34. The heat ray reflecting material is configured in a form of a stack comprising a plurality of element reflecting layers composed of a material having transparent properties to the heat ray, in which every adjacent two element reflecting layers are composed of a combination of materials having refractive indices which differ from each other by 1.1 or more. This makes the measurement be hardly affected by radiation ratio of the object-to-be-measured when temperature of the object-to-be-measured is measured by a radiation thermometer, enables to measure its temperature more correctly irrespective of the surface state thereof, and can simplify configuration of a measurement system.

A rigid and brittle bright metal flake is formed of a central layer of a reflective material supported on both sides by dielectric layers. In a preferred embodiment, the metal layer is aluminum having a thickness of about 100 nm and the dielectrics are either silicon dioxide or magnesium fluoride, each having a thickness of about 100 nm. The result is a very thin three-layered metal flake about 300 nm thick that exhibits a uniaxial compressive strength of about 8 times a corresponding uniaxial tensile strength. As a result, the metal flake is then afforded the benefits of rigidity and brittle fracture during the manufacturing and applicational processes which ultimately provides favorable planar and specular reflectance characteristics in the visible wavelength range.

Compounds that function to provide level or uniform metal deposits are provided. These compounds are particularly useful in providing level copper deposits. Copper plating baths and methods of copper plating using these compounds are also provided. These baths and methods are useful for providing a planarized layer of copper on a substrate having small apertures. The compositions and methods provide complete fill of small apertures with reduced void formation.

A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

A head-up display includes a projection system and a window having a target area where a reflective polarizer is positioned to reflect light from the projection system to a viewing area. Light from the projection system is p-polarized and strikes exposed window surface(s) at an acute angle to reduce or eliminate multiple or "ghost" images. The acute angle is closely matched to a Brewster angle of the exposed window surface(s). The reflective polarizer includes a multilayer stack with refractive indices of individual layers chosen to reflect p-polarized light substantially more than s-polarized light over a wide angular range that includes the acute angle. The reflective polarizer also can reflect infrared light to reduce cabin heating from solar radiation.

A light-emitting apparatus provides a ceramic-made base body, a frame body, a light-emitting element, a conductor layer and a light-transmitting member. The base body has on its upper surface a mounting portion for the light-emitting element. The frame body is joined to the upper surface of the base body so as to surround the mounting portion, with its inner peripheral surface shaped into a reflection surface. The wiring conductor has its one end formed on the upper surface of the base body and electrically connected to the light-emitting element, and has another end led to a side or lower surface of the base body. The light-transmitting member is disposed inside the frame body so as to cover the light-emitting element, which contains fluorescent materials for performing wavelength conversion. The base body is so designed that ceramic crystal grains range in average particle diameter from 1 to 5 μm.

A fiber laser with a fiber for laser light generation having an entrance end and an exit end comprises a pump light source for generating pump light to be coupled via the entrance side into the fiber. At the exit end of the fiber a first resonator mirror is provided which is highly reflecting for the laser light to be generated in the wavelength range with the smallest light amplification and to the light of the pump light source. Spaced from the first resonator mirror a second resonator mirror is provided via which light of further wavelength ranges can be fed back into the fiber with the aid of a collimating lens.

A method of scanning a light beam is disclosed. The method comprises scanning the light beam along a first axis and scanning the light beam along a second axis, such that a functional dependence of the scanning along the first axis is substantially a step-wave, and a functional dependence of the scanning along the second axis is other than a step-wave.

A catheter based method and apparatus for reflectance generated absorption spectral analysis of chronic inflammatory vascular conditions such as seen with atherosclerotic plaque within a blood vessel or other body cavity or compartment. The use of a bright mid range infrared light (mid-IR) source yields detectable reflected optical signals that may be sampled from an area smaller or larger than the typical diameter of a mammalian cell. The mid-IR light is delivered at selected mid-infrared wavenumbers. Using the apparatus and methods, the reflectance spectra and reflectance generated absorption spectra of a target tissue can be compared to reference spectra to identify and distinguish normal epithelium from tissue containing physiological markers indicative of vascular disease or other inflammatory conditions.

A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.

A color wheel comprises: a rotatable disc having a light reflective face and a region of photoluminescence material deposited on the light reflective face. The region of photoluminescence material comprises a substantially uniform thickness layer of a mixture of particles of the photoluminescence material that is deposited on the light reflective face of the disc by screen printing. The photoluminescence materials can comprise blue light or UV excitable photoluminescence materials such as phosphor materials or quantum dots. Color modulated light sources and a method of manufacturing a color wheel are also disclosed.

Diffuse reflective materials proximate to a structure formed by thermally induced phase separation of a thermoplastic polymer and a diluent providing enhanced flexibility and reflectivity especially in the visible wavelengths of 380-730 nanometers are described. Such materials find a wide variety of application among combinations with other reflective layers. The diffuse reflective articles are useful in backlight units of liquid crystal displays, lights, copy machines, projection system displays, facsimile apparatus, electronic blackboards, diffuse white standards, photographic lights and the like.

A light emitting assembly includes a metal substrate for dissipating heat from the assembly. The metal substrate includes an electrically insulating layer or coating on at least one side. Circuit traces are applied to the electrically insulating layer using either thick or thin film techniques. At least the ends of the circuit traces include a metallic section to which leads of light emitting elements are soldered or wire-bonded. A metallic section is provided adjacent the light emitting element to transfer heat to the underlying substrate and / or to reflect light from the element away from the substrate. A clear finish retards tarnishing of the reflecting metallic section.

A semiconductor light emitting device can be configured to maintain high luminance and to suppress the possibility of the occurrence of wire breakage with high quality and reliability. A method for producing such a semiconductor light emitting device with a high process yield is also disclosed. The semiconductor light emitting device can include a sealing member into which a reflective filler can be mixed in such an amount (concentration) range that luminous flux with a predetermined amount can be maintained and the possibility of the occurrence of wire breakage can be lowered. Various sealing members containing a reflective filler with a plurality of concentrations within this range can be prepared in advance. By taking advantage of the phenomenon where chromaticity shifts depending on the concentration of the reflective filler, a semiconductor light emitting device with less chromaticity variation can be produced utilizing a sealing member with a particular concentration in accordance with the chromaticity of a particular semiconductor light emitting element that is used and which may be varied during fabrication.

The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally generated light. A multi-layer semiconductor structure is deposited on the reflecting layer. The multi-layer semiconductor structure has an active layer that emits the internally generated light. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for internally generated light. The light extracting elements can be an array of trenches, an array of holes, an array of ridges or an array of etched strips. The light emitting diode improves the efficiency of light recycling illumination systems.

An illumination device using an innovative design to provide a uniform, highly concentrated and substantially longitudinal illumination. The device includes, at least one light source unit, a compound light guide with a built-in light-extracting feature and a reflective envelope. The compound light guide comprises two optically coupled sub-guides. A first sub-guide has a constant cross-section area with a profile optimized for an integral light-concentrating optics, and a second sub-guide has a varying cross-section area for controlling local light flux density inside the light guide and providing assembly means. Said light extracting feature having variable light extraction efficiency improves illumination uniformity at an area close to a light input end of the light guide without displacing a light source from the central normal line of a light-extracting feature. The extracted light from the light-extracting feature forms an effective light-emitting object with a constant width for the integral light-concentrating optics and therefore, the width of the light-extracting feature can be modulated to improve illumination uniformity without affecting the width of illumination. The reflective envelope recycles all light leaked out of the light guide and protects the light guide from environmental contamination and provides mechanical interface between the device and the application assembly.

An optical waveguide mode transformer has a substrate supporting a high refractive index core layer surrounded by lower refractive index cladding. The core layer includes a wide input waveguide section to accept a multimode, including a fundamental mode, light input. The input waveguide section is coupled to a narrow output waveguide section by a tapered region having a taper length enabling adiabatic transfer of the fundamental mode of the multimode light from the wide input waveguide section to the output waveguide section while suppressing(stripping) other modes of the multimode light input. The narrow output waveguide section supports a single mode light output comprising said fundamental mode. The core layer is contoured to include a localized upstanding ridge intermediate opposite lateral sides of the core layer. The output waveguide section includes a portion having a real index step between the core layer and cladding layers, and advantageously is functional to output a light beam having similar vertical and horizontal divergences.

Diffuse reflective materials proximate to a structure formed by thermally induced phase separation of a thermoplastic polymer and a diluent providing enhanced flexibility and reflectivity especially in the visible wavelengths of 380-730 nanometers are described. Such materials find a wide variety of application among combinations with other reflective layers. The diffuse reflective articles are useful in backlight units of liquid crystal displays, lights, copy machines, projection system displays, facsimile apparatus, electronic blackboards, diffuse white standards, photographic lights and the like.

A silver-based alloy thin film is provided for the highly reflective or semi-reflective layer of optical discs. Alloy additions to silver include gold, palladium, copper, rhodium, ruthenium, osmium, iridium, and platinum. These alloys have moderate to high reflectivity and reasonable corrosion resistance in the ambient environment.

Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.