4202results about How to "High bulk density" patented technology

A magnetic switching device, includes a first electrode, a second electrode, and a nanoparticle having a magnetic moment and being disposed between the first and second electrodes. At least one of the first electrode and the second electrode includes a magnetic material which has a net spin polarization in its conduction band for injecting, into the nanoparticle, an electrical current including a net spin polarization for overcoming the magnetic moment of the nanoparticle upon selection of a predetermined magnitude for the electrical current.

This invention combines the precision spray process with in-flight laser treatment in order to produce direct write electronic components. In addition to these components, the process can lay down lines of conductive, inductive, and resistive materials. This development has the potential to change the approach to electronics packaging. This process is revolutionary in that components can be directly produced on small structures, thus removing the need for printed circuit boards.

A method of self-trimming pattern, includes forming a pattern containing a plurality of regular or irregular features within a first material deposited on a substrate, depositing a conformal layer of second material, and etching the second material to form spacers of the second material along the sidewalls of the features in the first material.< / PTEXT>

A resonant grating structure in a waveguide and methods of tuning the performance of the grating structure are described. An apparatus includes a waveguide; and a subwavelength resonant grating structure embedded in the waveguide. The systems and methods provide advantages including narrowband filtering capabilities, minimal sideband reflections, spatial control, high packing density, and tunability.

The invention discloses an equivoluminal dipping loading method of non-metallocene olefin polymeric catalyst as well as application of copolymerizing course within two or more different olefins, which comprises the following steps: dissolving non-metallocene olefin polymeric catalyst in the solvent; mixing solution and carrier; stirring wet solid material evenly; drying; obtaining the load-typed non-metallocene olefin polymeric catalyst; making the solvent and carrier satisfy specific relationship.

In a three-dimensional chip configuration, a heat spreading material may be positioned between adjacent chips and also between a chip and a carrier substrate, thereby significantly enhancing heat dissipation capability. Furthermore, appropriately sized and positioned through holes in the heat spreading material may enable electrical chip-to-chip connections, while responding thermally conductive connectors may extend to the heat sink without actually contacting the corresponding chips.

A method of non- metallocene catalyst loading with high active: the carrier and chemical activating agent reacting with each other to get the modification carrier; dissolving the magnesium compounds into the tetrahydrofuran-alcohol mixing system to form solution, adding the modification carrier into the solution for reaction, filtering, washing, drying and sucting to get the composite carrier; dissolving the non- metallocene catalyst for lkene polymerization into the dissolvent, then reacting with the composite carrier and through process of washing, filtering and drying to get the load non- metallocene catalyst. It can also be: proceeding heating activating treatment before the reaction of carrier with the chemical activating agent; the composite carrier reacting with chemical additive before reacting with catalyst to get the modification composite carrier, the modification composite carrier reacting with catalyst to get the load non- metallocene catalyst. The load catalyst produced in this invention is high active; the load catalyst of high property can be produced with less methylaluoxane; the polyolefine produced with the catalyst prepared in this invention possesses sound granual shape.

A dry powder composition comprising one or more potent pharmaceutically active substances and a carrier substance, all of which are in finely divided form, wherein the formulation has a poured bulk density of from 0.28 to 0.38 g / ml is useful in the treatment of respiratory disorders.

This invention relates to an electrophoretic display having display cells filled with an electrophoretic composition which comprises a bi-modal particle system dispersed in a dielectric solvent or solvent mixture. The display has shown a higher % reflectance or whiteness, a higher contrast ratio, improved threshold characteristics and better bistability.

The present invention relates to an apparatus and process for polymerizing olefins. One embodiment comprises polymerizing at least one monomer in a first loop reactor in the presence of a catalyst to produce a first polyolefin fraction. A portion of the first polyolefin fraction is transferred to a second loop reactor, connected in series with the first loop reactor. The process further comprises polymerizing in the second loop reactor at least one monomer in the presence of a catalyst to produce a second polyolefin fraction in addition to the first polyolefin fraction. The combination of the first and second polyolefin fractions can produce a polymer resin fluff having bimodal molecular weight distribution.

Chip capacitors 20 are provided in a printed circuit board 10. In this manner, the distance between an IC chip 90 and each chip capacitor 20 is shortened, and the loop inductance is reduced. In addition, the chip capacitors 20 are accommodated in a core substrate 30 having a large thickness. Therefore, the thickness of the printed circuit board does not become large.

A portable analysis appliance includes a housing and a magazine for holding test elements. A delivery device is provided for delivering the test elements from a first position in the interior of the magazine to a second position lying at least partially outside the magazine and inside the housing. The delivery of the test elements including a first movement out of the interior of the magazine and a second movement by means of a guide into a presentation position.

Apparatus and method for growth of non-p-type GaN layers over p-type GaN layers. Embodiments include multi-junction LED film stacks, multi-junction LED devices paired into units and multi-junction LED arrays of the paired units. Epitaxial growths of p-type and non-p-type material layers are split between epitaxial chambers clustered onto a single platform to reduce p-type dopant cross-contamination. Arrayed multi-junction LED devices provide improved packing density and reduced blinking during AC operation.

Method and apparatus for generating a low tar, renewable fuel gas from biomass and using it in other energy conversion devices, many of which were designed for use with gaseous and liquid fossil fuels. An automated, downdraft gasifier incorporates extensive air injection into the char bed to maintain the conditions that promote the destruction of residual tars. The resulting fuel gas and entrained char and ash are cooled in a special heat exchanger, and then continuously cleaned in a filter prior to usage in standalone as well as networked power systems.

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and / or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.

The invention discloses a titanium cathode active substance, a preparation method thereof and a titanium lithium ion power battery, and aims to solve the technical problem of enhancing the rate performance of a lithium ion power battery. The formula of the titanium cathode active substance is Li4Ti5O12 / Mx, wherein Li4Ti5O12 is spinel lithium titanate, M is a dopant such as a metal simple substance, a metal compound, a nonmetallic simple substance or a nonmetallic compound; the elements or the ions contained in the dopant enter the Li4Ti5O12 crystal lattice or are compounded with the Li4Ti5O12 crystal lattice; and the preparation method comprises the following steps: the precursor mixture of compound lithium titanate is prepared, and spray drying and heat treatment are performed. The cathode of the titanium lithium ion power battery adopts Li4Ti5O12 / Mx. Compared with the prior art, the titanium cathode active substance has the advantages of high capacity, high bulk density, high volume specific capacity, good high-rate performance, good product uniformity, good battery processability, low possibility of air bulking of the battery, and low cost.

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, a solar cell is provided that comprises of a substrate, a back electrode formed over the substrate, a p-type semiconductor thin film formed over the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type semiconductor thin film, and a transparent electrode formed over the n-type semiconductor thin film. The p-type semiconductor thin film results by processing a dense film formed from a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and / or VIA, wherein the dense film has a void volume of about 26% or less. The dense film may be a substantially void free film.

Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and / or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.

Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and / or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

A method for forming a layer of an LED phosphor material includes disposing a first surface in a proximity of a powder that includes an LED phosphor material, forming electrostatic charges on the first surface, and forming a layer of the LED phosphor material on the first surface at least partially by using the electrostatic charges. In an embodiment, the method includes disposing the first surface in an interior of a chamber and forming an airborne distribution of the powder in the interior of the chamber in a vicinity of the first surface. In another embodiment, the method includes providing a reservoir of the powder and applying to said phosphor powder an electrostatic charge opposite to that of said electrostatic charge on the first surface.

A geometrically modifiable resonator is comprised of a resonator disposed on a substrate, and a means for geometrically modifying the resonator. The geometrically modifiable resonator can achieve active optical and / or electronic control of the frequency response in metamaterials and / or frequency selective surfaces, potentially with sub-picosecond response times. Additionally, the methods taught here can be applied to discrete geometrically modifiable circuit components such as inductors and capacitors. Principally, controlled conductivity regions, using either reversible photodoping or voltage induced depletion activation, are used to modify the geometries of circuit components, thus allowing frequency tuning of resonators without otherwise affecting the bulk substrate electrical properties. The concept is valid over any frequency range in which metamaterials are designed to operate.

Concurrently forming different metal gate transistors having respective work functions is disclosed. In one example, a metal carbide, which has a relatively low work function, is formed over a semiconductor substrate. Oxygen and / or nitrogen are then added to the metal carbide in a second region to establish a second work function in the second region, where the metal carbide itself establishes a first work function in a first region. One or more first metal gate transistor types are then formed in the first region and one or more second metal gate transistor types are formed in the second region.

An SOI wafer including an active semiconductor material layer on an insulating layer is processed to form thereon first and second active semiconductor regions that respectively have different thicknesses and that are vertically and laterally insulated. In the process, a trench is etched into the SOI wafer, seed openings are formed in the bottom of the trench to reach the underlying active material layer, the trench is filled with epitaxially grown semiconductor material progressing from the seed openings, some of the epitaxially grown material is removed to form the second active regions, and oxide layers are provided so that the second active regions are laterally and vertically insulated from the first active regions formed by remaining portions of the active semiconductor material layer.

Relatively high speed methods for increasing the bulk density of coal particles, apparatus for increasing the bulk density of coal particles and methods for making metallurgical coke. Once such method includes depositing coal particles onto a charging plate external to a coking oven to provide an elongate bed of dry, uncompacted coal having an upper surface of the charging plate. The charging plate has side walls, and at least one movable end wall An impact pressure is applied to the upper surface of the bed of dry, uncompacted coal while degassing the coal to provide a dry, compacted coal bed having a bulk density ranging from about 960 to about 1200 kilograms per cubic meter.

Disclosed is a fiber-optic cable that possesses a high cable filling coefficient (and / or a high cable fiber density) yet ensures that its enclosed optical fibers demonstrate improved attenuation performance when subjected to temperature variations between about −40° C. and 70° C. The fiber-optic cable is suitable for efficient installation into ducts, such as via blowing.

A high density memory card assembly having application for USB drive storage, flash and ROM memory cards, and similar memory card formats. A cavity is formed through a rigid laminate substrate. First and second digital memory devices (e.g., TSOP packages or bare semiconductor dies) are located within the cavity so as to be recessed relative to the top and bottom of the substrate. The recessed first and second memory devices are arranged in spaced, face-to-face alignment with one another within the cavity. The first and second memory devices are covered and protected by respective first and second memory packages that are located on the top and bottom of the substrate. By virtue of the foregoing, the memory package density of the assembly can be increased without increasing the height or area consumed by the assembly for receipt within an existing external housing.

This invention discloses the method for preparing high-density spherical lithium ferric phosphate used as the positive material of lithium ion cell, which contains synthesizing the ferric iron salt aqueous solution, phosphorus source aqueous solution and alkali aqueous solution to form spherical or spheroid ferric phosphate precursor, uniformly mixed with lithium source, carbon source and doped metal compound after being washed and dried, high temperature heat treating at 600-900 degree centigrade for 8-48 hr under inertia or reducing atmosphere protection to obtain lithium ferric phosphate with mean grain size of 7-12 micrometer,2.0-2.2g / cm3 of tap density, high buck density of 140-155mAh / g first discharge ratio capacity at normal temperature, and high volume ratio capacity.

A solar cell array comprising: a substrate having a carrier surface on which a plurality of electrically conductive bonding pads are provided, the bonding pads being spaced from one another along a main direction; a plurality of solar cells, each solar cell of the plurality including a back electrode bonded to a first portion of a respective bonding pad, wherein each bonding pad comprises a second portion defining an exposed contact region not covered by the back electrode of the respective solar cell, and wherein an interconnecting lead electrically connects the second portion of the bonding pad associated with a first solar cell with an electrode of a directly adjacent second solar cell.The substrate is an electrically insulating substrate and preferably a flexible film, made for instance of polyimide material.