Disclosed are a
semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated
metal layer, for reducing the
thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated
metal layer, a
heat sink, a bonding layer adjacent to the
heat sink, and a second
metal layer in between the substrate and the
heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.