3309results about "Laser cooling arrangements" patented technology

This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces of the members located in the sealed space are covered with a covering agent made of an ethylene-polyvinyl alcohol copolymer.

A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.

A group III nitride semiconductor light emitting device according to the present invention includes an immediate layer formed of Al_xGa_1-x-yIn_yN (0<x<1, 0<y<1, x+y<1) between an active layer and a cladding layer and an electron blocking layer formed of p-type group III nitride semiconductor having a smaller electron affinity than that of the intermediate layer so as to be in contact with the intermediate layer. The semiconductor light emitting layer may be a laser diode or a LED.

A nitride semiconductor light-emitting device includes an emission layer (103) formed on a substrate (100), and the emission layer includes a quantum well layer of GaN_1-x−y−zAs_xP_ySb_z (0<x+y+z≦0.3) containing Al.

A masking material 13, which includes stripe-like openings 12 parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films 11 doped with Mg are grown on the openings 12 by selective-area growth. The nitride semiconductor thin films 11 are composed of a portion 14 formed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portion 15 formed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portion 15 is made lower than that of the portion 14.

A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length. In a specific embodiment, the device has a cleaved region provided on the second end of the second waveguide, the cleaved region being perpendicular to the second direction of the second waveguide.

A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.

An optical illuminator using Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed. Optical modules configured using single VCSEL and VCSEL arrays bonded to a thermal submount to conduct heat away from the VCSEL array, are suited for high power and high speed operation. High speed optical modules are configured using single VCSEL or VCSEL arrays connected to a high speed electronic module on a common thermal submount or on a common Printed Circuit Board (PCB) platform including transmission lines. The electronic module provides low inductance current drive and control functions to operate the VCSEL and VCSEL array. VCSEL apertures are designed for a desired beam shape. Additional beam shaping elements are provided for VCSELs or VCSEL arrays, for desired output beam shapes and/or emission patterns. VCSEL arrays may be operated in continuous wave (CW) or pulse operation modes in a programmable fashion using a built-in or an external controller.

An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.

A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected with the input port and the output port. The tunneling junction is configured in a way (i) which provides electrons in a particular energy state within the structure, (ii) which produces surface plasmons in response to the input signal, (iii) which causes the structure to act as a waveguide for directing at least a portion of the surface plasmons along a predetermined path toward the output port such that the surface plasmons so directed interact with the electrons in a particular way, and (iv) which produces at the output port an output signal resulting from the particular interaction between the electrons and the surface plasmons.

A novel class of optoelectronic devices incorporate an interference filter. The filter includes at least two optical cavities. Each of the cavities localizes al least one optical mode. The optical modes localized at two cavities are at resonance only at one or at a few discrete selective wavelengths. At resonance, the optical eigenmodes contain one mode having a zero intensity at a node position between the two cavities, where this position shifts as a function of the wavelength. A non-transparent element, which is preferably an absorbing element, a scatterer, or a reflector, is placed between two cavities. At a discrete selective wavelength, when the node of the optical mode matches with the non-transparent element, the filter is transparent for light. At other wavelengths, the filter is not transparent for light. This allows for the construction of various optoelectronic devices showing a strongly wavelength-selective operation.

An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with wiring. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. A plurality of OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the OE elements positioned in optical alignment with the optical via for receiving the light. A carrier is interposed between electrical interconnect elements. The carrier is positioned between the wiring of the silicon layer and a circuit board and the carrier is electrically connecting first interconnect elements connected to the wiring of the silicon layer and second interconnect elements connected to the circuit board.

A compact mid-IR laser device utilizes an external cavity to tune the laser. The external cavity may employ a Littrow or Littman cavity arrangement. In the Littrow cavity arrangement, a filter, such as a grating, is rotated to provide wavelength gain medium selectivity. In the Littman cavity arrangement, a reflector is rotated to provide tuning. A quantum cascade laser gain medium provides mid-IR frequencies suitable for use in molecular detection by signature absorption spectra. The compact nature of the device is obtained owing to an efficient heat transfer structure, the use of a small diameter aspheric lens for both the output lens and the external cavity lens and a monolithic assembly structure to hold the optical elements in a fixed position relative to one another. The compact housing size may be approximately 20 cm×20 cm×20 cm or less. Efficient heat transfer is achieved using a thermoelectric cooler TEC combined with a high thermal conductivity heat spreader onto which the quantum cascade laser gain medium is thermally coupled. The heat spreader not only serves to dissipate heat and conduct same to the TEC, but also serves as an optical platform to secure the optical elements within the housing in a fixed relationship relative on one another. The small diameter aspheric output and external cavity lens each may have a diameter of 10 mm or less and each lens is positioned to provided a collimated beam output from the quantum cascade laser gain medium. The housing is hermetically sealed to provide a rugged, light weight portable MIR laser source.

Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.

A semiconductor light-emitting apparatus which has a simple structure can include a base having a concave portion having an upward opening, a semiconductor light-emitting device placed on the bottom of the concave portion, and a wavelength conversion portion for converting the wavelength of light emitted from the semiconductor light-emitting device. The wavelength conversion portion can include first and second wavelength conversion layers formed on the bottom of the concave portion and in the opening thereof at a distance above the device, respectively. A space defined by the base having the concave portion and the second wavelength conversion layer can be provided with a sealing portion containing a material for transmitting the light emitted from the semiconductor device and light that is emitted from the first and second wavelength conversion layers.

A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.