514 results about "Principal plane" patented technology

A light emitting device includes a nitride semiconductor light emitting element provided with a group III nitride semiconductor laminating structure and a laser. The group III nitride semiconductor laminating structure has a non-polar plane or a semi-polar plane as a principal plane for crystal growth and includes a multiple-quantum well layer having a quantum well layer as an emission layer containing In and a barrier layer having a wider band gap than that of the quantum well layer. The laser generates induced emission light having a wavelength shorter than an emission wavelength of the quantum well layer and optically excites the quantum well layer in the nitride semiconductor light emitting element with the induced emission light.

A locking system for mechanical joining of floorboards. For horizontal mechanical joining there is a projecting portion with a locking element which cooperates with a locking groove in an adjacent board. A tongue-and-groove joint for vertical mechanical joining has cooperating upper abutment surfaces and cooperating lower abutment surfaces which are essentially parallel with the principal plane of the floorboards and of which the lower abutment surfaces are positioned essentially outside the outer vertical plane, i.e. displaced relative to the upper abutment surfaces. The tongue is movable at an angle into the groove and the locking element is insertable into the locking groove by mutual angular movement of the boards about the joint edges.

A light-directing lensing member for off-axial preferential-side distribution of light from a light emitter having an emitter axis, including a base end with a perimeter-loop line defining a main plane transverse the emitter axis, and an outer surface configured for refracting light from the emitter in a predominantly off-axis direction toward the preferential side. The outer surface includes a major lens-portion and an axially-located minor lens-portion. The major lens portion outer surface has a front region centered on the front side, a back region centered on the back side, and a middle region around the emitter axis and contiguous with the front and back regions. The minor lens-portion has a surrounding-loop surface extending from the middle region transverse the main plane and terminating at an end surface configured to direct substantially axially-parallel light from the emitter in off-axis direction toward the preferential side.

A very thin semiconductor film is used for channels of semiconductor memory elements such that leak currents are reduced by the quantum-mechanical containment effect in the direction of film thickness. The amount of electrical charge accumulated in each charge accumulating region is used to change conductance between a source and a drain region of each read transistor structure. The conductance change is utilized for data storage. The thickness of the channel of the write transistor structure is preferably no more than 5 nm. According to one embodiment, the channel of the write transistor is formed by a semiconductor film deposited on a surface intersecting a principal plane of the substrate.

A main information area 31 capable of recording an information signal and a subsidiary information area 32 for recording subsidiary information that is different from the information signal are divided in one principal plane direction of a substrate, and an information layer for recording the information signal in the main information area 31 is provided also in the subsidiary information area 32, and medium identification information for distinguishing the medium optically is recorded in the information layer of the subsidiary information area 32 without changing the shape of the information layer. As a result, the medium identification information can be recorded in an optical recording medium 1 stably. In particular, the initialization of a phase change type optical recording medium and the recording of the medium identification information can be performed at the same time, so that the production process can be simplified, and the production costs can be reduced.