2631results about How to "Small thickness" patented technology

Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells in NOR or NAND memory architectures that allow for direct tunnel programming and erase, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention. The low voltage direct tunneling program and erase capability reduces damage to the gate stack and the crystal lattice from high energy carriers, reducing write fatigue and enhancing device lifespan. The low voltage direct tunnel program and erase capability also enables size reduction through low voltage design and further device feature scaling. Memory cells of the present invention also allow multiple bit storage. These characteristics allow memory device embodiments of the present invention to operate within the definition of a universal memory, capable of replacing both DRAM and ROM in a system.

A method for producing a field effect transistor, in which a plurality of layers are in each case deposited, planarized and etched back, in particular a gate electrode layer, is disclosed. This method allows the manufacturing of transistors having outstanding electrical properties and having outstanding reproducibility.

In a wireless IC tag, metallic antennas are deposited as thin films on the front and back surfaces of a spacer, made of a heat-resistant glass epoxy material having a desired dielectric constant, to form a first antenna and a second antenna. An IC chip is mounted in the center of the first antenna. The second antenna functions as an auxiliary antenna for resonating to a desired frequency of a transmission radio wave of the first antenna to strengthen the intensity of the radio wave. Accordingly, even when the IC tag is mounted to a cable or the like, the tag can be mounted in the interior of the enclosure of the cable and thus the radio wave intensity of the first antenna can be prevented from being weakened by a metallic member in the cable.

In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.

An intravascular filter device for use in capturing debris which may occur as a result of an intravascular procedure. The filter device includes a proximal section, a distal section and a mid-section. The mid-section includes three rings configured in a sixteen apices alternating V-pattern. The filter device specifically embodies structure that provides enhanced radial opening and angular resistance to collapse in its expanded state. While, in its compressed state the filter device provides an extremely small compressed profile giving it the desired ability to be delivered into very small vessels of the human vasculature.

A device for imaging a relief object without illuminating a platen is disclosed. The device includes a single electrode electroluminescent device, which may be inorganic or organic, and a current source. The current source is coupled to the single electrode of the electroluminescent device and to the relief object to be imaged. The valleys and ridges of the relief object couple current to the electroluminescent device at different magnitudes which causes the electroluminescent device to generate light at different intensities that correspond to the ridges and valleys of the relief object. The generated light forms an image of the relief object which may be focused by optical elements onto a sensor array for capture and image processing. In another embodiment of the invention, a one-to-one sensor array is located proximate the electroluminescent device to capture the image. In an embodiment of the invention which insulates the relief object from current, the electroluminescent device is covered with a variable resistance layer and the variable resistance layer is covered with a flexible electrode. One lead from the current source is coupled to the flexible electrode and another lead is coupled to the single electrode. When a relief object is brought in contact with the flexible electrode, a localized pressures generated by the ridges of the relief object form conductive paths through the variable resistance layer which are lower in electrical resistance than those formed by pressure in the areas adjacent the valleys of the relief object. The different magnitudes of current delivered through the conductive paths to the electroluminescent device cause the electroluminescent device to generate an image of the relief object without exposing the relief object to electrical current.

A light guide plate includes (i) a first light guide layer made of a material having a refractive index n1, and (ii) a scattering light guide layer having a function of scattering light. A reflection means for irradiating the scattering light guide layer with the light having propagated in the first light guide layer is provided on a surface opposite to a light guide surface of the first light guide layer, the light guide surface on which the light is incident. The scattering light guide layer includes at least (i) a second light guide layer made of a material having a refractive index n2 (n2<n1), and (ii) a scattering layer for scattering the light propagating in the second light guide layer.

The object of the present invention is to propose a structure of a display device in which water is prevented from passing through the side faces of a display device using an organic light-emitting element and a gap between substrates is made uniform. On the first substrate having the light-emitting element provided thereon, the thicknesses of the layers deposited in the peripheral area, the pixel portion and the driving circuit portion are equalized with each other. Furthermore, an adhesive is provided as thin as possible in the peripheral area of the first substrate so as to bond a second substrate to the first substrate. As a result, the distance between the first substrate and the second substrate can be made uniform throughout the peripheral area of the first substrate, the pixel portion and the driving circuit. Moreover, since a protective film overlying the organic light-emitting element is also provided on the side faces of the second insulating film, water is prevented from entering the display device through its side faces.

The present invention aims to provide a seamless capsule free of an interfacial tension modifier and a gelling agent. The present invention provides a shell formed by a shell composition containing gelatin and a plasticizer, but free of an interfacial tension modifier and a gelling agent, and a seamless capsule comprising a capsule content free of an interfacial tension modifier and a gelling agent.

A percutaneous agent delivery or sampling device comprising a sheet having a plurality of microblades for piercing and anchoring to the skin for increasing transdermal flux of an agent and for improving the attachment of the device to the skin.

Disclosed is a heat radiator which is provided in a transmissive display unit in which a plurality of rows of light emitting arrays constituted by arranging a plurality of light emitting units including a plurality of LEDs mounted on a wiring substrate are arranged on the back surface side of a transmissive display panel, and illuminating light emitted from the LEDs is irradiated onto the display panel. In the heat radiator, a radiation plate (28) supporting LEDs (18) and a heat sink (37) constitute an overlap area (57) with a back panel (13) interposed therebetween and are integrated with each other through the back panel by a fixing member in the overlap area. The back panel, radiation plate, and heat sink are firmly mounted to each other, achieving effective heat radiation.

An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

It is an objective of the present invention to provide an antenna construction that allows the thickness of an antenna structure be lower than that of planar antennas according to prior art without sacrificing the radiation efficiency at the desired RF-bands as 900 MHz GSM and 1800 MHz / 1900 MHz DCS / PCS. A further object of the invention is to provide an antenna construction that is insensitive to changes in positions of electrically conductive objects in the vicinity. The objectives of the invention are achieved by a loop antenna structure equipped with an electrically conductive parasitic radiator that is electro-magnetically coupled with the antenna loop. Performance at the DCS / PCS bands can be further improved by using an electrically conductive tuner element that provides a stronger electromagnetic coupling between the antenna loop and the parasitic radiator.

An optical element using a medium exhibiting negative refraction, a carbon nano tube being used for the medium exhibiting negative refraction, is disclosed. There is also disclosed an optical system having a plurality of optical elements each formed of a medium exhibiting negative refraction, wherein the plurality of optical elements includes optical elements having different chromatic dispersions.

A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon nitride layer. One of the substrates is subject to hydrogen implantation and the two substrates are bonded to one another in an annealing process. The two substrates are separated, thereby leaving a layer of strained silicon on a front side of one of the substrates. A back side layer of silicon dioxide or silicon nitride is then removed to restore the substrate to a substantially planar state. The method may be employed to form dislocation-free strained silicon thin films. The films may be under tensile or compressive strain.

The invention relates to a system for laying and mechanically joining building panels, especially thin, hard, floating floors. Adjacent joint edges (3, 4) of two panels (1, 2) engage each other to provide a first mechanical connection locking the joint edges (3, 4) in a first direction (D1) perpendicular to the principal plane of the panels. In each joint, there is further provided a strip (6) which is integrated with one joint edge (3) and which projects behind the other joint edge (4). The strip (6) has an upwardly protruding locking element (8) engaging in a locking groove (14) in the rear side (16) of the other joint edge (4) to form a second mechanical connection locking the panels (1, 2) in a second direction (D2) parallel to the principal plane of the panels and at right angles to the joint. Both the first and the second mechanical connection allow mutual displacement of joined panels (1, 2) in the direction of the joint.

Layers of a passivating material and / or containing luminescent centers are deposited on phosphor particles or particles that contain a host material that is capable of capturing an excitation energy and transferring it to a luminescent center or layer. The layers are formed in an ALD process. The ALD process permits the formation of very thin layers. Coated phosphors have good resistance to ambient moisture and oxygen, and / or can be designed to emit a distribution of desired light wavelengths.

There is provided a contacting device (1) for chip cards, preferably for SIM cards, comprising a base (2), a slider (12) arranged at the base (2) and being movable with respect to the base (2), the chip card (4) being slidable between an insert / removal position and a reading position by means of said slider, and means (7, 22) for inhibiting removal of the slider from the contacting device (1). Preferably, the slider (12) is slidably mounted to the base (2) and is in abutting engagement with an abutment in the insert / removal position such that the slider (12) cannot be removed from the contacting device (1), i.e. the slider (12) cannot be moved beyond the insert / removal position. Thus, the contacting device does not comprise any loose parts that could get lost. In accordance with another embodiment of the present invention, there is provided a contacting device (1) for a chip card (4) comprising a stationary base (2) and a movable slider (12), wherein a chip card (4) is slidable between an insert / removal position and a reading position, wherein a metal cover (24) is fixedly mounted to the contacting device (1) and for providing support for the chip card (4) for providing counter-forces taking up contacting forces between contacting elements of the contacting device (1) and contacting pads of the chip card. Preferably, the contacting device (1) has a card plenum (11) for receiving the chip card (4), and the metal cover (24) spans the card plenum (11) as well as the slider (12) and extends around the sides of the base (2). By using a metal cover, a particularly small thickness is possible for this component. Further, the metal cover is easy to manufacture and to assemble.

The present invention provides image pickup optical systems capable of suppressing the degradation of the image quality due to unnecessary light beams while attaining compaction by optimizing the shapes of the emission surfaces of reflection prisms. The image pickup optical system includes an incidence-side prism for reflecting incident light while folding it by about 90 degree and an image-surface side prism. An image pickup device is placed near the emission surface of the image-surface side prism. The incidence-side prism is formed to have a convex emission surface. This can reduce the amount of the unnecessary light beams (stray light) reflected by the aforementioned reflection surface and also causes the unnecessary light beams reflected by the emission surface and the reflection surface to be diffused, thereby significantly reducing the amount of unnecessary light beams directed to the light receiving surface of the image pickup device. This can suppress the occurrence of ghosts and the like due to unnecessary light beams as aforementioned.

It is an objective that the optical loss and the number of optical components are reduced in an optical recording head using a near-field where a laser beam is guided from a light source to the tip of the head and a thermally assisted magnetic recording head. A structure where the traveling direction of emitted beam is rotated in the direction of the cavity of the laser diode element and a reflector for guiding the beam to the surface of the surface of the laser diode element is monolithically integrated in the laser diode element is mounted over the slider so that the direction of the cavity of the laser diode element is parallel to the surface of the recording medium, and the substrate side of the laser diode element is mounted to be in the direction opposite the face adjacent to the upper face of the slider.

A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET). The at least one MOSFET may include a body, a channel layer adjacent the body, and a dopant blocking superlattice between the body and the channel layer. The dopant blocking superlattice may include a plurality of stacked groups of layers. Each group of layers of the dopant blocking superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

To reduce viewing angle dependence of γ characteristics in a normally black liquid crystal display. Each pixel 10 has a first sub-pixel 10a and a second sub-pixel 10b which can apply mutually different voltages to their respective liquid crystal layers. Relationships ΔV12 (gk)>0 volts and ΔV12 (gk)≧ΔV12 (gk+1) are satisfied at least in a range 0<gk≦n−1 if it is assumed that ΔV12=V1−V2, where ΔV12 is the difference between root-mean-square voltage V1 applied to the liquid crystal layer of the first sub-pixel 10a and root-mean-square voltage V2 applied to the liquid crystal layer of the second sub-pixel 10b.