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14249results about "Nanooptics" patented technology

Release strategies for making transferable semiconductor structures, devices and device components

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.
Owner:THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS

Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates

A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.
Owner:MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN EV

Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures

A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X<1 and 0≦Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.
Owner:CREELED INC

Medical device with low magnetic susceptibility

An assembly with a substrate, nanomagnetic material and magetoresistive material. The nanomagnetic material has a saturation magentization of from about 2 to about 3000 electromagnetic units per cubic centimeter; and it contains nanomagnetic particles with an average particle size of less than about 100 nanometers. The average coherence length between adjacent nanomagnetic particles is less than 100 nanometers.
Owner:BIOPHAN TECH

Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and / or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and / or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.
Owner:THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS
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