7446 results about "Current density" patented technology

A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms<√{square root over ( )}{Jw/(6nAt)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.

A magnetic random access memory device comprises a spin torque MRAM cell (100) having a reduced switching current (I_c) wherein standard materials may be used for a free layer (108). A fixed magnetic element (112) polarizes electrons passing therethrough, and the free magnetic element (108) having a first plane anisotropy comprises a first magnetization (130) whose direction is varied by the spin torque of the polarized electrons. An insulator (110) is positioned between the fixed magnetic element (112) and the free magnetic element (108), and a keeper layer (104) positioned contiguous to the free magnetic element (108) and having a second plane anisotropy orthogonal to the first plane anisotropy, reduces the first plane anisotropy and hence reduces the spin torque switching current (I_c). The keeper layer (104) may comprise alternating synthetic antiferromagnetic layers (132, 134) of magnetization approximately equal in magnitude and opposite in direction.

A self-limiting electrosurgical return electrode for use with electrosurgery. Through the selection of impedance characteristics for the electrode materials of the principal body of the electrode, and through tailoring of electrode geometries, the return electrode of the present invention is self-regulating and self-limiting as to current density and temperature rise so as to prevent patient trauma. The electrosurgical return electrode includes a sheet of material having an effective bulk impedance equal to or greater than about 4,000 OMEGA.cm and one or more connectors for making electrical connection to the sheet. The effective bulk impedance of the sheet may arise from resistive components, capacitive components, inductive components, or combinations thereof. The configuration of the presently described return electrode allows the electrode to self-limit the electrode's current densities, thereby preventing burning of a patient during surgery. Furthermore, through employment of washable surface areas, the electrode is made readily cleanable, disinfectable, sterilizable, and reusable. An optional sleeve is provided for cooperative use with the electrode.

An electrochemical microfluidic device has one or a plurality of microstructures, such as a microchannel, in which an electrically conductive means is integrated to reduce the ohmic resistance within the microstructure and hence to improve electrochemical measurements particularly when large current densities are involved. The electrically conductive means can be connected as a counter-electrode and can be used to re-generate the product of the reaction occurring at the working electrode. A method of fabricating electrochemical microfluidic devices comprising such an electrically conductive means is also disclosed. The invention may particularly be used in all electrochemical sensor applications where detection is performed in small volumes.

One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.

This invention encompasses methods of producing a colored oxide layer on an aluminum material by anodizing the aluminum material in an electrolyte comprising water, sulfuric acid and oxalic acid. The anodizing step comprises passing at least two sequential current densities through the electrolyte. Methods of making and using article with a colored oxide layer on an aluminum material make by the methods disclosed herein are also disclosed.

An electrosurgical instrument, system and methods are provided for the vaporization, cutting, coagulation, or treatment of tissue in the presence of an electrically conductive fluid medium. The electrosurgical probe comprises at least one active electrode, and at least one “floating” electrode having at least one end in close proximity to at least one active electrode. The floating electrode is not connected in any way to the electrosurgical power supply, but rather has a “floating” potential determined by the shape and position of the electrode. The floating electrode increases current density in the region of the probe distal end.