The invention relates to a low-temperature bonding method for a semiconductor without an oxide layer, which relates to a semiconductor bonding process. A transition layer technology is adopted, a thinGe layer is introduced at a Si, Ge and SiO2 semiconductor bonding interface, and the low-temperature crystallization characteristics and the crystallization atomic migration characteristics of the Gematerial are used to realize non-oxide layer Si wafer bonding, Ge / Si bonding and GOI bonding. The low-temperature crystallization characteristics of a magnetron sputtering Ge layer are used to realize a non-interfacial oxide layer semiconductor bonding interface, a semiconductor Ge transition layer grows on the surface of a wafer after being cleaned, the low-temperature crystallization characteristics of the Ge are used, crystallization of the Ge transition layer is realized through low-temperature annealing, migration of atoms at the bonding interface is thus driven, and the oxide layer is finally dissociated. According to the method in the invention, the problem of introducing a hydrophilic oxide layer at the interface during a direct hydrophilic bonding process can be solved, crystallization of the semiconductor bonding interface transition layer can also be realized under the low temperature of 300 to 400 DEG C, and atomic bond bonding is thus realized.