8812results about "Capacitors" patented technology

A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOz deposition process. The etching rate for the HfxSiyOz layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOz layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.

The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer. In one implementation, a subatmospheric physical vapor deposition method of forming a high k ABO3 comprising dielectric layer on a substrate includes providing a sputtering target comprising ABO3 and a substrate to be deposited upon within a physical vapor deposition chamber. A sputtering gas is fed to the chamber under conditions effective to sputter the target and deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure is varied within the chamber effective to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.

Vertically oriented semiconductor devices may be added to a separately fabricated substrate that includes electrical devices and / or interconnect. The plurality of vertically oriented semiconductor devices are physically separated from each other, and are not disposed within the same semiconductor body, or semiconductor substrate. The plurality of vertically oriented semiconductor devices may be added to the separately fabricated substrate as a thin layer including several doped semiconductor regions which, subsequent to attachment, are etched to produce individual doped stack structures. Alternatively, the plurality of vertically oriented semiconductor devices may be fabricated prior to attachment to the separately fabricated substrate. The doped stack structures may form the basis for diodes, capacitors, n-MOSFETs, p-MOSFETs, bipolar transistors, and floating gate transistors. Ferroelectric memory devices, Ferromagnetic memory devices, chalcogenide phase change devices, may be formed in a stackable add-on layer for use in conjunction with a separately fabricated substrate. Stackable add-on layers may include interconnect lines.

The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer. In one implementation, a subatmospheric physical vapor deposition method of forming a high k ABO3 comprising dielectric layer on a substrate includes providing a sputtering target comprising ABO3 and a substrate to be deposited upon within a physical vapor deposition chamber. A sputtering gas is fed to the chamber under conditions effective to sputter the target and deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure is varied within the chamber effective to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.